JPS56116674A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS56116674A
JPS56116674A JP2080580A JP2080580A JPS56116674A JP S56116674 A JPS56116674 A JP S56116674A JP 2080580 A JP2080580 A JP 2080580A JP 2080580 A JP2080580 A JP 2080580A JP S56116674 A JPS56116674 A JP S56116674A
Authority
JP
Japan
Prior art keywords
layer
type
xalxas
coated
photoelectric transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2080580A
Other languages
Japanese (ja)
Other versions
JPS6142434B2 (en
Inventor
Kotaro Mitsui
Takao Oda
Susumu Yoshida
Saburo Takamiya
Shigeru Kitabi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2080580A priority Critical patent/JPS56116674A/en
Publication of JPS56116674A publication Critical patent/JPS56116674A/en
Publication of JPS6142434B2 publication Critical patent/JPS6142434B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To highly efficiently obtain a photoelectric transducer of high reliability by a method wherein the side surface of the P type Ga1-xAlxAs is coated with the same reflection preventing film as the upper surface portion so that the whole exposed P type Ga1-xAlxAs surfaces can be coated by a single coating process. CONSTITUTION:Formed are an N type GaAs layer 1 and a P type GaAs layer 2 thereon as well as a P-N junction 3 to generate a photovoltage at the boundary therebetween. Moreover formed are a P type electrode 6 ohmic-contacting with portion of the layer 2 and a P type Ga1-xAlxAs layer 4 on the whole except for a portion and periphery of the layer 2 and the neighborhood of the electrode 6. Then, a reflection preventing film 7 is provided so as to cover the upper surface 4a and the side surface 4b of the layer 4, and it is specified that the conact area between the layers 2 and 4 be more than 80% of the upper surface area of the layer 2. Thus, the upper surface 4 and the side surface 4b of the layer 4 are coated by a single coating process. Accordingly, working efficiency is improved as well as a photoelectric transducer of high reliability can be readily manufactured.
JP2080580A 1980-02-20 1980-02-20 Photoelectric transducer Granted JPS56116674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2080580A JPS56116674A (en) 1980-02-20 1980-02-20 Photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2080580A JPS56116674A (en) 1980-02-20 1980-02-20 Photoelectric transducer

Publications (2)

Publication Number Publication Date
JPS56116674A true JPS56116674A (en) 1981-09-12
JPS6142434B2 JPS6142434B2 (en) 1986-09-20

Family

ID=12037249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2080580A Granted JPS56116674A (en) 1980-02-20 1980-02-20 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS56116674A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140783A (en) * 1984-08-02 1986-02-27 Takaharu Tomooka Preparation of edible vinegar

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140783A (en) * 1984-08-02 1986-02-27 Takaharu Tomooka Preparation of edible vinegar

Also Published As

Publication number Publication date
JPS6142434B2 (en) 1986-09-20

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