JPS57192087A - Photoelectric converter element - Google Patents
Photoelectric converter elementInfo
- Publication number
- JPS57192087A JPS57192087A JP56076516A JP7651681A JPS57192087A JP S57192087 A JPS57192087 A JP S57192087A JP 56076516 A JP56076516 A JP 56076516A JP 7651681 A JP7651681 A JP 7651681A JP S57192087 A JPS57192087 A JP S57192087A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- type amorphous
- minority carrier
- generated
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005452 bending Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To suppress trapping of the minority carrier, and to enhance the optical responding speed of photoelectric converter by a method wherein at both the sides of an I type amorphous silicon film, the same conductive type layer to make the trap for the minority carrier to be recombined are joined. CONSTITUTION:An N type amorphous silicon layers 2 and an I type amorphous silicon layer 1 are formed being laminated in the direction A of film formation repeatedly with a short period alternately between electrodes on a substrate. As a result, the N type amorphous silicon layers 2 are provided as the recombination layers for the minority carrier on both the sides of the I type amorphous silicon layers 1. By this constitution, the tunnel effect is generated at the junction part, and the problem of band bending is not generated. Moreover the minority carrier out of the photo carrier generated in the I type amporphous silicon layer 1 is recombined in the N type amorphous silicon layer 2 after injected light is made to OFF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076516A JPS57192087A (en) | 1981-05-22 | 1981-05-22 | Photoelectric converter element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076516A JPS57192087A (en) | 1981-05-22 | 1981-05-22 | Photoelectric converter element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57192087A true JPS57192087A (en) | 1982-11-26 |
Family
ID=13607431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56076516A Pending JPS57192087A (en) | 1981-05-22 | 1981-05-22 | Photoelectric converter element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57192087A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
-
1981
- 1981-05-22 JP JP56076516A patent/JPS57192087A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
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