JPS57192087A - Photoelectric converter element - Google Patents

Photoelectric converter element

Info

Publication number
JPS57192087A
JPS57192087A JP56076516A JP7651681A JPS57192087A JP S57192087 A JPS57192087 A JP S57192087A JP 56076516 A JP56076516 A JP 56076516A JP 7651681 A JP7651681 A JP 7651681A JP S57192087 A JPS57192087 A JP S57192087A
Authority
JP
Japan
Prior art keywords
amorphous silicon
type amorphous
minority carrier
generated
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076516A
Other languages
Japanese (ja)
Inventor
Ryoji Oritsuki
Toru Watanabe
Yukio Ichimura
Hiromi Kanai
Kozo Odawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076516A priority Critical patent/JPS57192087A/en
Publication of JPS57192087A publication Critical patent/JPS57192087A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To suppress trapping of the minority carrier, and to enhance the optical responding speed of photoelectric converter by a method wherein at both the sides of an I type amorphous silicon film, the same conductive type layer to make the trap for the minority carrier to be recombined are joined. CONSTITUTION:An N type amorphous silicon layers 2 and an I type amorphous silicon layer 1 are formed being laminated in the direction A of film formation repeatedly with a short period alternately between electrodes on a substrate. As a result, the N type amorphous silicon layers 2 are provided as the recombination layers for the minority carrier on both the sides of the I type amorphous silicon layers 1. By this constitution, the tunnel effect is generated at the junction part, and the problem of band bending is not generated. Moreover the minority carrier out of the photo carrier generated in the I type amporphous silicon layer 1 is recombined in the N type amorphous silicon layer 2 after injected light is made to OFF.
JP56076516A 1981-05-22 1981-05-22 Photoelectric converter element Pending JPS57192087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076516A JPS57192087A (en) 1981-05-22 1981-05-22 Photoelectric converter element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076516A JPS57192087A (en) 1981-05-22 1981-05-22 Photoelectric converter element

Publications (1)

Publication Number Publication Date
JPS57192087A true JPS57192087A (en) 1982-11-26

Family

ID=13607431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076516A Pending JPS57192087A (en) 1981-05-22 1981-05-22 Photoelectric converter element

Country Status (1)

Country Link
JP (1) JPS57192087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate

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