JPS57109387A - Light emitting element - Google Patents

Light emitting element

Info

Publication number
JPS57109387A
JPS57109387A JP18686180A JP18686180A JPS57109387A JP S57109387 A JPS57109387 A JP S57109387A JP 18686180 A JP18686180 A JP 18686180A JP 18686180 A JP18686180 A JP 18686180A JP S57109387 A JPS57109387 A JP S57109387A
Authority
JP
Japan
Prior art keywords
layer
layers
recombination
energy gaps
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18686180A
Other languages
Japanese (ja)
Inventor
Itsuo Umeo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18686180A priority Critical patent/JPS57109387A/en
Publication of JPS57109387A publication Critical patent/JPS57109387A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To produce lights of different wave lengths by providing a plurality of recombination layers between layers of a larger energy gaps and by differentiating energy gaps of recombination layers. CONSTITUTION:A P type InP buffer layer 2, a P type InGaAs P layer 3, P type InP layer 4, an N type InGaAs P layer 5 and an N type InP payer 6 are consecutively epitaxial-grown on a P type InP substrate 1. The layer 2, 4, 6 are trapping layers and the layer 4 is formed thinner than a diffusion length for the minority carrier. Energy gaps of the recombination layers 3 and 5 are 1.17eV, 0.96eV respectively and emit light of 1.06mum and 1.29mum. The lights are taken out in the direction in which the energy gaps of the recombination layer become larger.
JP18686180A 1980-12-26 1980-12-26 Light emitting element Pending JPS57109387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18686180A JPS57109387A (en) 1980-12-26 1980-12-26 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18686180A JPS57109387A (en) 1980-12-26 1980-12-26 Light emitting element

Publications (1)

Publication Number Publication Date
JPS57109387A true JPS57109387A (en) 1982-07-07

Family

ID=16195935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18686180A Pending JPS57109387A (en) 1980-12-26 1980-12-26 Light emitting element

Country Status (1)

Country Link
JP (1) JPS57109387A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570172A (en) * 1982-12-21 1986-02-11 Thomson-Csf Light emitting diode with surface emission
JPH0335567A (en) * 1989-07-03 1991-02-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570172A (en) * 1982-12-21 1986-02-11 Thomson-Csf Light emitting diode with surface emission
JPH0335567A (en) * 1989-07-03 1991-02-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting diode

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