JPS57152178A - Semiconductor light emitting device with super lattice structure - Google Patents

Semiconductor light emitting device with super lattice structure

Info

Publication number
JPS57152178A
JPS57152178A JP3725081A JP3725081A JPS57152178A JP S57152178 A JPS57152178 A JP S57152178A JP 3725081 A JP3725081 A JP 3725081A JP 3725081 A JP3725081 A JP 3725081A JP S57152178 A JPS57152178 A JP S57152178A
Authority
JP
Japan
Prior art keywords
layer
lattice structure
super lattice
alyga1
ysb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3725081A
Other languages
Japanese (ja)
Inventor
Yoshifumi Suzuki
Mitsuru Naganuma
Hiroshi Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3725081A priority Critical patent/JPS57152178A/en
Publication of JPS57152178A publication Critical patent/JPS57152178A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor light emitting device with a low threshold current density in short wave bands and a longer service life by a method wherein either the active layer or clad layers or both are composed of a super lattice structure consisting of AlyGa1-ySb and AlxGa1-xSb layers. CONSTITUTION:Successively grown on a GaSb substrate 1 by the molecular beam epitaxial method or MOCVD method or the like are a lower clad layer 2 of a 1-2mum thick AlzGa1-zSb film, active layer 3 with a super lattice structure (0<=y<=0.2<=x<=z<=1, with the thickness of each layer not more than 200Angstrom ) of AlyGa1-ySb-AlxGa1-xSb, upper clad layer 4 of a 1-2mum thick AlzGa1-zSb film, and electrode layer 5 of an approximately 1mum thick GaSb film. A change in the super lattice structure AlyGa1-ySb layer 7 between 10-200Angstrom results in a change in emitted light lengths between 1.0-1.7mum. Replacing Sb with As results in the emission in a band of waves shorter than 7,000Angstrom .
JP3725081A 1981-03-17 1981-03-17 Semiconductor light emitting device with super lattice structure Pending JPS57152178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3725081A JPS57152178A (en) 1981-03-17 1981-03-17 Semiconductor light emitting device with super lattice structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3725081A JPS57152178A (en) 1981-03-17 1981-03-17 Semiconductor light emitting device with super lattice structure

Publications (1)

Publication Number Publication Date
JPS57152178A true JPS57152178A (en) 1982-09-20

Family

ID=12492384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3725081A Pending JPS57152178A (en) 1981-03-17 1981-03-17 Semiconductor light emitting device with super lattice structure

Country Status (1)

Country Link
JP (1) JPS57152178A (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104189A (en) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS59105394A (en) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59181084A (en) * 1983-03-30 1984-10-15 Fujitsu Ltd Semiconductor laser device
JPS59181587A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor laser element and manufacture thereof
JPS609186A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Semiconductor light-emitting device and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6079785A (en) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol Semiconductor laser device
JPS60100494A (en) * 1983-11-05 1985-06-04 Fujitsu Ltd Semiconductor light emitting device
JPS6110293A (en) * 1984-06-25 1986-01-17 Sharp Corp Photo semiconductor device
JPS6180882A (en) * 1984-09-28 1986-04-24 Hitachi Ltd Semiconductor laser device
JPS61181185A (en) * 1985-02-07 1986-08-13 Nec Corp Semiconductor light-emitting element
JPS61278187A (en) * 1985-06-03 1986-12-09 Hitachi Ltd Semiconductor laser device
JPS6251282A (en) * 1985-08-30 1987-03-05 Sony Corp Semiconductor laser
JPS6273688A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
JPS62181562A (en) * 1986-02-05 1987-08-08 Konishiroku Photo Ind Co Ltd Radiation image reader
JPS62188295A (en) * 1986-02-13 1987-08-17 Sharp Corp Semiconductor laser
JPS6393189A (en) * 1986-10-08 1988-04-23 Seiko Epson Corp Semiconductor light-emitting device and manufacture thereof
US4742378A (en) * 1984-03-28 1988-05-03 Japan Represented By President Of Tohoku University Junction-type semiconductor light emitting device with mesa
JPS63150986A (en) * 1986-12-15 1988-06-23 Sharp Corp Semiconductor laser
JPS649668A (en) * 1987-07-02 1989-01-12 Kokusai Denshin Denwa Co Ltd Infrared ray emitting element
EP0395392A2 (en) * 1989-04-28 1990-10-31 Kabushiki Kaisha Toshiba Semiconductor laser using five-element compound semiconductor
JPH0334591A (en) * 1989-06-30 1991-02-14 Furukawa Electric Co Ltd:The Quantum well semiconductor laser element
US5027164A (en) * 1988-03-23 1991-06-25 Fujitsu Limited Semiconductor device
JPH05259506A (en) * 1992-01-10 1993-10-08 Internatl Business Mach Corp <Ibm> Super/light-emitting semiconductor diode and manufacture therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1981 *

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4573161A (en) * 1982-07-12 1986-02-25 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor laser
JPS6352792B2 (en) * 1982-12-07 1988-10-20 Kokusai Denshin Denwa Co Ltd
JPS59104189A (en) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS59105394A (en) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59181084A (en) * 1983-03-30 1984-10-15 Fujitsu Ltd Semiconductor laser device
JPS59181587A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor laser element and manufacture thereof
JPH0437598B2 (en) * 1983-03-31 1992-06-19 Fujitsu Ltd
JPS609186A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Semiconductor light-emitting device and manufacture thereof
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPH0462195B2 (en) * 1983-10-06 1992-10-05 Kogyo Gijutsuin
JPS6079785A (en) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol Semiconductor laser device
JPS60100494A (en) * 1983-11-05 1985-06-04 Fujitsu Ltd Semiconductor light emitting device
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
US4742378A (en) * 1984-03-28 1988-05-03 Japan Represented By President Of Tohoku University Junction-type semiconductor light emitting device with mesa
JPH0418476B2 (en) * 1984-06-25 1992-03-27 Sharp Kk
JPS6110293A (en) * 1984-06-25 1986-01-17 Sharp Corp Photo semiconductor device
JPS6180882A (en) * 1984-09-28 1986-04-24 Hitachi Ltd Semiconductor laser device
JPS61181185A (en) * 1985-02-07 1986-08-13 Nec Corp Semiconductor light-emitting element
JPS61278187A (en) * 1985-06-03 1986-12-09 Hitachi Ltd Semiconductor laser device
JPS6251282A (en) * 1985-08-30 1987-03-05 Sony Corp Semiconductor laser
JPS6273688A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device
JPS62181562A (en) * 1986-02-05 1987-08-08 Konishiroku Photo Ind Co Ltd Radiation image reader
JPH0681222B2 (en) * 1986-02-05 1994-10-12 コニカ株式会社 Radiation image reader
JPS62188295A (en) * 1986-02-13 1987-08-17 Sharp Corp Semiconductor laser
JPS6393189A (en) * 1986-10-08 1988-04-23 Seiko Epson Corp Semiconductor light-emitting device and manufacture thereof
JPS63150986A (en) * 1986-12-15 1988-06-23 Sharp Corp Semiconductor laser
US4918496A (en) * 1987-07-02 1990-04-17 Kokusai Denshin Denwa Kabushiki Kaisha Infrared emitting device with dislocation free layer
JPS649668A (en) * 1987-07-02 1989-01-12 Kokusai Denshin Denwa Co Ltd Infrared ray emitting element
US5027164A (en) * 1988-03-23 1991-06-25 Fujitsu Limited Semiconductor device
EP0395392A2 (en) * 1989-04-28 1990-10-31 Kabushiki Kaisha Toshiba Semiconductor laser using five-element compound semiconductor
JPH0334591A (en) * 1989-06-30 1991-02-14 Furukawa Electric Co Ltd:The Quantum well semiconductor laser element
JPH05259506A (en) * 1992-01-10 1993-10-08 Internatl Business Mach Corp <Ibm> Super/light-emitting semiconductor diode and manufacture therefor

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