JPS6393189A - Semiconductor light-emitting device and manufacture thereof - Google Patents

Abstract

PURPOSE:To realize a short wave length light-emitting device having high luminous efficiency and high luminance by forming the semiconductor light-emitting device having double hetero-structure by using super-lattice structure in which ZnSxSe1-x and ZnSySe1-y are laminated alternately. CONSTITUTION:ZnSe 2 containing an n-type dopant in 5Angstrom and ZnS 3 containing no dopant in 5Angstrom are laminated alternately onto the (001) face of an n-type GaAs substrate 1, thus shaping an n-type superlattice third layer 4. ZnSe 5 including(the n-type dopant in 20Angstrom and ZnS 6 including no dopant in 5Angstrom are laminated interchangeably, thus forming an n-type superlattice first layer 7. ZnSe 8 containing a p-type dopant in 20Angstrom and ZnS 9 containing no dopant dn 50Angstrom are laminated alternately, thus shaping a p-type superlattice second layer 10. Since strain energy concentrates on a laminated interface in a strain superlattice, the formation of an interface level is inhibited, thus shaping an excellent epitaxial thin-film.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention provides ZnS, Zn5c! 1- to the double of semiconductor light emitting devices such as visible light semiconductor lasers and light emitting diodes consisting of
The mouth-jointed structure (1) is inspired by the formation and manufacturing method.

[Traditional limb techniques]

Currently, Ga A IA is used as a semiconductor laser element material.
Materials such as s-based and InGaAs I'-based materials are widely used. However, the wavelength of semiconductor lasers obtained using such materials is only up to 62 Onm, and wavelengths smaller than this have not been obtained.

Semiconductor lasers have been put to practical use as light sources for video discs (VD), digital audio discs (DAD), and the like. When using a semiconductor laser in such a device, it is preferable that its oscillation wavelength be as short as possible. This is because the shorter the wavelength, the better the beam convergence and the easier the illt++ control of the optical system of the above-mentioned device. In addition, in the case of optical memory devices, which are currently being actively researched in various fields, the shorter the wavelength of the light source, the higher the C/N ratio as the incident energy increases. Since it is possible to increase the power, it is essential to shorten the wavelength of the light source.

Zinc sulfide (ZnS), selenide! ? ) (Z n
11-Vl group compound semiconductors such as SC) have a wider energy band gap than GaAJAs5InGaAsP and are direct transition type, so they are used as materials that can oscillate at shorter wavelengths than conventional ones. However, the II-Vl group compound semiconductor is GaA
It is difficult to form a pmt1 compound using a single material because it has a large self-compensation effect different from the III-V group compound semiconductor of JAs"7. For example, in ZnS1ZnSc, nU
However, in ZnTe, only the conductivity type 1) has been obtained. Therefore, an injection type light emitting device using a combination of Zn5c-ZnTe can be considered, and a double heterojunction type semi-JfJ body laser using these combinations can also be considered (Public publication JP-A-104484-1984). A double-height I-t made of Zn5cTc-based material f' constructed based on such knowledge 15. A semiconductor laser is shown, and 97 is Zn5cxTe+ -x (0≦×≦
1), 98 is a p layer disposed on the first layer.
The second layer 9G consisting of Zn5cyTe+ -y (0≦y≦1) is an n-type Zn5czTc+ -z (0≦2) placed on the opposite side of the first layer to the surface on which the second layer is formed.
≦1).

In such a laser, by making the band gap of the second layer 98 and the third layer 96 larger than that of the first layer 97, theoretically, the band gap of the second layer 98 and the third layer 96 can be increased as in the well-known double hetero type GeAlAs semiconductor laser. By applying a forward bias between the second layer 98 and the third layer 96, electrons and holes are well confined within the first FIO 7, and light obtained by recombination of the electrons and holes is also rejected. Since it is confined within the first layer 97, it is possible to bubble out as laser light.

However, in reality, laser oscillation has not been achieved. This JgJ prisoner is in the first layer 97, second layer 98 and third layer f)
This is because a large number of interface levels are formed near the interface of G, and these interface states act as non-emissive centers, so the injected electrons and holes are captured by these non-emissive centers and do not contribute to light emission. it is conceivable that.

[Problem that the invention seeks to solve]

The above-mentioned conventional technology has a problem in that a large number of interfaces/1111 points generated at the boundaries of each layer act as non-light-emitting centers. Therefore, the present invention is intended to solve the above-mentioned IJ point, and its purpose is to provide a (1η) structure of a ZnSSc-based semiconductor laser capable of emitting short wavelength laser light and a method for manufacturing the same. be.

[Failure to solve the problem]

The semiconductor light emitting device of the present invention has a superlattice structure laminated film made of ZnSSc, p-type and n-type superlattice structures, or mixed crystal ZnSSc.

It is characterized by being held between. Further, as a method for forming these laminated films, the MOV 111> method is used, which allows control of the formation of poles F, V, and V.

[Effect]

ZnS1ZnSO has 5.4003 people and 5.0, respectively.
Waiting for the lattice constant of 081 people, the lattice mismatch is 4.6%
It is. When several layers of Z n S * Z n S c are stacked alternately at intervals of several to several tens of layers, a strained superlattice is formed due to lattice mismatch. In the strained superlattice, strain energy is concentrated at the laminated interface, so the formation of the interface Q11 is suppressed, making it possible to form a good epitaxial V film.

〔Example〕

FIG. 1 shows a double hemi-oral junction (
A cross section of a semiconductor light emitting device having a 1°η structure (1 growth diagram).

On the (001) plane of the n-type GaAs substrate 1, r+
Five layers of Zn5c2 containing an ffi dopant and five layers of ZnS3 containing no dopant are alternately stacked to form a third layer of an n-type superlattice. Zn5c, ZnS layer 1000
By repeating the period, the n-type superlattice 3rd report 4 becomes 1μm
The thickness will be .

Further, 20 layers of Zn5C5 containing an n-type dopant and 5 layers of Zn5O containing no dopant are alternately stacked to form the first layer 7 of the n-type uJ lattice. By repeating the Zn5c layer and ZnS layer 40 cycles, super-n type (each 7 first FI7
is 0, I It mO) thickness.

Furthermore, 20 layers of Zn5c8 containing a p-type dopant and 50 layers of ZnS9 containing no dopant were stacked alternately.
) type superlattice second housing 10 is formed.

Zn5cA91. By searching the ZnS layer for 140 cycles, 1)! (The 'j superlattice second layer 10 has a thickness of 1 μm.

Then, on the p-type superlattice second layer 10, p Q
% In on the back side of the ohmic group electrode 11 and the GaAs substrate 1.
Steaming the n-type ohmic electrode 12 by '? formed by,
By performing thermal annealing, the result is shown in FIG. Double Hetele 1tE: A semiconductor light emitting device having a double pattern is obtained.

When forming these superlattices <+'l m, MOV
l) The IE method was used.

FIG. 2 shows a schematic diagram of the configuration of the M OV l)E device used in the present invention.

A graphite susceptor 14 is set inside a horizontal reactor 13 made of transparent quartz, and a substrate 15 is placed thereon. 4 and the substrate 15 are heated by a high frequency induction heating coil 16. Nomi kari l! The temperature is monitored by a thermocouple 17 embedded inside the sensor. The reactor 13 is connected to a high vacuum evacuation system 19 via a valve 18 . Also, reactor 13
The reaction gas exiting from the reactor is passed through a valve 20 to a C1-tally hop 21 and then to a waste gas treatment device 22. The valve 20 has the function of keeping the internal pressure of the reactor 13 constant.

Valves 23 to 32 are three-way valves, and the incoming gas is routed to the Mei/Lai: /33.34 or waste line 35.30.
Supply to either one of the following. The main lines 33 and 34 are introduced into the reactor 13 after merging. W65 line 35.
30 respectively reach the rotary pump 30 via valves 38 and 37 and are introduced into the It6 H gas treatment device 22. Valves 38.37 are connected to waste lines 35.30 respectively
It has the function of regulating the internal pressure of the waste line/35
and 3G internal pressure are respectively connected to main lines 33 and 3.
Adjust so that it is equal to 4. 40 is Masklow: 'I/
Precisely control the gas flow rate using the controllers I+- and I+-. Bo/Be It
1 is filled with hydrogen gas, which is Toyaria gas, and is supplied after being highly purified by a purifier 42.

The bubbler 43 is filled with adducts and
/l is maintained at a predetermined temperature. The adduct is Z
A compound in which an alkyl compound of n and an alkyl compound of S%SO are combined, from -20°C.

2 (Since it is a liquid in the 4 degree range near the temperature, it can be supplied as vapor by bubbling the carrier gas. The supply amount can be controlled by the flow rate of the bubbling gas and the temperature of the bubbler.

The bubbler 45 is filled with triethylaluminum as a donor dopant, and is maintained at a predetermined temperature by a constant temperature bath 46. The valves 47 and 48 have a pressure regulating function, and the flow side of the valves 47 and 48, which contains the adduct and dopant liquid level inside the bubbler, is maintained at atmospheric pressure. The cylinders 40 to 51 are each filled with hydrogen sulfide diluted with hydrogen gas, hydrogen selenoide, and ammonia gas as an acceptor dopant, and the supply amount is controlled by a mask controller 40.

The manufacturing procedure of the semiconductor superlattice structure is described below.

Bubbles 24 and 26 are each supplied with a carrier gas containing vapor of the adduct, triethylaluminum, and valves 23 and 25 are supplied with the same flow rate of carrier gas. In addition, hydrogen selenide, hydrogen sulfide, and ammonia are supplied to pulp 27, 20, and 31, respectively, and pulp 3
2, 30, and 28 are supplied with carrier gas at the same flow rate as pulp 31, 20, and 27, respectively. Main lie/
The carrier gas for diluting the raw material flows at the same flow rate through the waste life 33 and 34 and the waste life 35 and 36, respectively.

The internal pressures of the main lines 33 and 34 correspond to the internal pressure of the reactor 13 determined by the gas flow rate and the pulp 20, and the internal pressure of the waste lives 3G and 35 is determined by the pulp 3.
7 and 38, respectively, are set equal to the internal pressure of 34.33. Pulp 23 and 24.25 and 26.2
7, 28, 29, 30, 31, and 32 are operated in pairs, respectively. That is, when one is connected to the main line, the other is connected to the waste line. When switching gases, switch both at the same time. With this operation,
Reaction is 13, main line 33.34 and replenishment line 3
DH gas can be switched between the main line and waste line while keeping the internal pressure of 5.3G constant. When switching gases (・r), fluctuations in the internal pressure of the reactor 13 cause fluctuations in the growth rate and do not cause unevenness in the thickness of the thin film constituting the superlattice structure or in-plane composition distribution. It is desirable to hold it down as much as possible.

N-type superlattice created by switching between hydrogen sulfide and hydrogen selenide?
1'1ill is produced as follows.

When supplying hydrogen sulfide, pulp 27.30', 2
5 to main lines 33, 34 16. tFL, pulp 2
8.20.26 connects to waste line 35.3G. At this time, hydrogen sulfide is supplied to the reactor 13 through the main line/34, and the carrier gas containing hydrogen selenide and triethylaluminum is discarded. Next, pulp 27.2
8 at the same time. At this time, only the carrier gas is supplied to the reactor 13, and the growth is interrupted, resulting in an interval state. Thereafter, a carrier gas containing hydrogen selenide and triethylaluminum is supplied to the reactor 13 by simultaneously switching the pulps 25.2+3, 20, and 30. In the same manner, carrier gas containing hydrogen sulfide, hydrogen heptase/hydrogen heptahydride, and triethylaluminum can be alternately supplied to the reactor 13 by continuing to change the pulp at intervals of a reasonable length. During this growth, the pulps 24 and 32 are connected to the main line side, and the pulps 2G and 31 are connected to the waste line side, so that the adducts are continuously supplied and the ammonia gas is continuously discarded.

FIG. 3 shows an embodiment of a supply system for supplying 1G raw gas to the reactor 13 according to the present invention. The adduct is i! I!
By continuously supplying hydrogen sulfide, hydrogen selenide, and a carrier gas containing triethylaluminum alternately, n
A ZnS-Zn5e superlattice structure is formed. In FIG. 3, the horizontal axis shows the rri shift in time. 51%
53, 54, and 55 are adducts, hydrogen selenide, and
It shows the supply timing of hydrogen sulfide and triethylaluminum. 5 (3, 57, 58, 50 indicates the state in which raw materials are supplied to the reactor, 60.61.62.03
indicates that the original f:[ is not supplied. As is clear from the 441 combination of raw material supplies, growth starts from time zero, 64 is Zn5c:Als, 65 is Zns.
The growing time (:′l) is shown, and 6G is the interval at which the growth is interrupted.Zn5c:8I%
The thickness of Zn S can be changed arbitrarily by the time setting of 64.65, respectively. Three-way valves 23 to 32 in Figure 2
If the driving is performed by a sequencer, the above-mentioned growth sequence can be easily carried out.

FIG. 4 does not show an example of the sequence of supplying raw material gas to the reactor 13 according to the present invention. A superlattice structure is formed by repeating the simultaneous supply of 1) hydrogen selenide and triethylaluminum and 1) hydrogen sulfide.

In FIG. 4, the horizontal axis shows the change in time. 67.
68, 69, and 70 are adducts, hydrogen selenide, hydrogen sulfide, and triethyl aluminira, respectively! It shows the supply timing of 71172.73.7/l is Ii, ;f is being supplied to the reactor, 75.76.77.7
8 indicates a state where the original r[ is not supplied. Time Ze "Starts growth from J, 79 is Zn5e:A
1, 80 indicates the time period during which Zns are grown, and 81 indicates the interval at which the growth is interrupted.

A superlattice structure was manufactured according to the sequence shown in FIG. 3 or 4 under the following growth conditions.

Growth temperature = 325°C Reactor internal pressure 70Torr (CIls) t Zn-3c (CIls) t
(7)/(Bringing gas amount: Bapler temperature - 15″″
At C, 10 m1/m1n (vapor pressure at -15°C is 21 mml1g)
Base 10% II * Sc supply m: 50 m I /
in hydrogen base 2% I1. S supply m: 250ml
/ mn (C, H,), AI bubbling gas: At a bubbler temperature of 40@C, 20 ml/min (
The vapor pressure at 110°C is 0.15mm1lrr)3
3.34. Hydrogen flow rate flowing to 3G: 2.51/min per each line.

Under the following conditions, the growth rate of Zn5c:Al and ZnS was about 1 person/see. Growth is Zn5c:AI
It started with E and ended with the ZnS layer. Based on the growth rate,
The superlattice structure was determined by setting the supply times of hydrogen sulfide, hydrogen selenide, and triethylaluminum. The interval was 1 to 2 seconds.

In the method for manufacturing a superlattice according to the present invention, the above-mentioned (C1
ls ) * Z n -S e (C1ls )-adduct as well as shown in Table 1. R* Zns R*
Even if adducts obtained by all combinations of blRySc are used, the i! IJ ifj, and when the supply amount determined by the vapor pressure of the adduct and the bubbling gas flow rate is the same, a superlattice structure exhibiting the same characteristics as in the above example is formed by r! I was able to build A.

<Table 1> In addition, in the schematic diagram of the MOV I) E IjJ location shown in Figure 2, by increasing the number of three-way valves and the number of gas lines with the same configuration, for example, Zn5clo
It is also possible to fabricate a superlattice containing a mixed crystal layer, such as ZnSo −+ SC, 950.

FIG. 5 is a diagram showing the manufacturing process of a semiconductor light emitting device having a double Heder R+ junction structure in an embodiment of the present invention.

On the (001) plane of the n-type GaAs M plate 82, p
Five layers of Zn5c containing a type dopant and five layers of ZnS without a dopant were alternately layered for 1000 cycles,
An n-type superlattice third layer 83 is formed with a thickness of 1 μm.

Further, 20 layers of Zn5e containing a p-type dopant and 5 layers of ZnS containing no dopant are alternately layered for 40 periods to form an n-type superlattice first layer 84 with a thickness of 0.1 μm (II).

Then, 20 layers of Zn5c containing a p-type dopant and 50 layers of ZnS containing no dopant are alternately stacked for 140 cycles to form a p-type superlattice second layer η85 with a thickness of 1 μm.

Through the above steps, the cross-sectional structure shown in FIG. 5 (E) can be obtained.

Next, the n-type superlattice third layer 83, the n-type superlattice first layer 84,
The second superlattice 85 is removed using a photolithography method and an etching method, leaving a stripe shape.
It is possible to obtain a cross-sectional structure shown in FIG. 5 (1).

And the n-type JIJ lattice third layer 83 left in a stripe shape
, n-type superlattice? 1'; 1st layer 8・1, p-type supergrade second 4
85, a non-doped ZnS layer 86
A cross-sectional structure shown in FIG. 5 (C1) is obtained.

In this structure, an n-type ohmic electrode 87 is installed on the n-type GaAs plate 82 side, and a p-type ohmic electrode 88 is installed on the 1) type superlattice second layer 85 side. Obtain the configuration of the cross-sectional structure shown.

FIG. 6 is a structural diagram of a semiconductor light emitting device having a double hetero J junction structure in an embodiment of the present invention.

In a process similar to that shown in FIG.
5e-sssee, *a mixed crystal, n-type mixed crystal 3A
9100 with a thickness of 1 μm. Furthermore, 20 layers of Zn5c containing an n-type dopant and 5 layers of ZnS containing no dopant were alternately stacked for 40 periods to form the first n-type superlattice.
Layer 01 is formed with a thickness of 0.1 μm. Then, 20 layers of Zn5e with a p-type dopant and 50 layers of ZnS without a dopant were layered alternately for 140 cycles to form a p-type layer.
Type superlattice m 2 L'! ≦J2 with a thickness of 1 μm, 0-order n-type mixed crystal third report 90, n-type superlattice first layer 91
, the n-type superlattice second layer 92 is removed in a stripe-like form, the side surfaces thereof are formed with a non-doped ZnS layer 03, and the n-type ohmic electrode 94 is placed on the n-type GaΔ5 substrate 80 side. A p-type ohmic electrode 95 is installed on the second layer 92 side to obtain the configuration shown in FIG.

The light emitting device according to the present invention has a superlattice (where 1 is an element of ZnS and ZnS).
It is not limited to those composed only of n5c, but Zn5xSc+-x and Zn5y by appropriate combinations.
Mixed crystal 1 of Sc+ + y (0≦x1%y≦1, X=)
Those having a c′1 superlattice structure also fall within the scope of the present invention. In addition, the n-type third layer 83 of the fifth layer is made of nMiZnsz.
sc, -z mixed crystal (0≦2≦1), n-type superlattice second layer 8
5 with PffiZnSwSc+-W mixed crystal (0≦W≦1) tl'? It can be easily inferred that a similar function can be achieved even with a built-in version.

Further, there may also be a combination in which the n-type mixed crystal third layer 90 in FIG. 6 is an n-type superlattice structure layer or an n-type mixed crystal layer, and the 1) type superlattice second layer 92 is a p-type mixed crystal layer. , the scope of this patent claim,
belongs to

〔Effect of the invention〕

As described above, according to the present invention, a semiconductor light emitting device having a double heterostructure is produced using a superlattice structure in which 42 Zn5xSc1-X and Zn5ySel-y (0≦X+3/≦11X~y) are alternately arranged. By forming this, a short wavelength light emitting element with high luminous efficiency and high brightness lσ, which could not be obtained conventionally, could be realized. Furthermore, using the MOVI)E method, Zn5xSc+ -X and Zn5ySel-y
By producing a superlattice structure in which (0≦X1%3/≦1, X to y) are alternately laminated, it has become possible to form a high quality and highly homogeneous superlattice structure with good reproducibility. It is also said that the present invention 1!11 contributes to the improvement of the quality of short wavelength light emitting elements to 11-Vi.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional configuration diagram of a semiconductor light emitting device having a double henge 11 junction structure according to an embodiment of the present invention. ZnS 4 without dopant... n ^! Jfl1 name child 3rd layer 5・
...Zn5c6 containing n-type dopant...ZnS containing no dopant 7...N-type superlattice first layer 8...Zn5cO containing p-type dopant...ZnS containing no dopant 10... - N-type superlattice second layer 11...p-type ohmic potential 12...n-type ohmic electrode FIG. 2 is a schematic diagram of the configuration of the MOVPE device used in the present invention. 13... Horizontal reactor made of transparent quartz glass 14... Susceptor made of graphite 15... Substrate 16... High frequency induction heating coil 1
7...Thermocouple 1B...Pulp 10...High j'
5 Air exhaust system 20...Pulp 21...+1-Tally bomb 22...Waste gas treatment equipment 23-32...Three-way pulp 33.34...Main line 35.3G...Disposal line 37. 38...Pulp 3 r)...0-Tarrybo/pu 40...Mask 1J-Controller 41...Hydrogen gas cylinder 42...Hydrogen purifier 43...Bubbler 44 containing adduct... - Constant temperature bath 45... Bubbler 4 containing triethyl aluminum G... Constant temperature bath 47, /IR... Pressure! Pulp with L'J adjustment function 49...Cylinder 50 containing hydrogen sulfide diluted with hydrogen gas...Water Z: Cylinder 51 containing hydrogen selenide diluted with gas...Hydrogen The 3rd vlJ cylinder containing ammonia diluted with gas is a diagram showing an embodiment of the sequence for supplying raw material gas to the reactor according to the present invention. 52...Adduct supply timing 53...Hydrogen selenide supply timing 54...Hydrogen sulfide supply timing 55...Triethylaluminum supply timing 56...Adduct is supplied to the reactor There is v, decoy, 5
7...Hydrogen selenide is being supplied to the reactor 58...Hydrogen sulfide is being supplied to the reactor 60
... State where triethylaluminum is supplied to the reactor 60 ... State where adduct is not supplied to the reactor 61
... State where hydrogen selenide is not supplied to the reactor 62 ... State where hydrogen sulfide is not supplied to the reactor 63 ... State where triethylaluminum is not supplied to the reactor G4 ... Zn5e : Time period during which Al is growing 65.
. . . Time period 6G during which ZnS is grown . . . Interval m 4vA at which growth is interrupted is a diagram showing an example of the sequence of supplying raw material gas to the reactor according to the present invention. 07...Adduct supply timing 68...Hydrogen selenide supply timing 69...Hydrogen sulfide supply timing 70...Triethylaluminum supply timing 71...Adduct is supplied to the reactor Iru V, status 72
... State 73 where hydrogen selenide is supplied to the reactor ... State 74 where hydrogen sulfide is supplied to the reactor
... State where triethylaluminum is supplied to the reactor 75 ... VSfg where adduct is not supplied to the reactor
7G...State where hydrogen selenide is not supplied to the reactor 77...State where hydrogen sulfide is not supplied to the reactor 78...Triethylaluminum is supplied to the reactor (If)
State where it is not grown 79...Zn5c: Time period in which Δ1 is growing 80
. . . Time period during which ZnS is grown 81 . . . Interval at which growth is interrupted FIG. 82... slA plate to n-type Gλ 83... n-type superlattice third layer 84... n-type superlattice first layer 85... n-type superlattice second layer 86 ...Non-doped Zn8 layer 87...N-type ohmic electrode 88...P-type ohmic electrode FIG. 6 shows a double heterojunction (
41'l;i'r diagram of a semiconductor light emitting device having a shape. 80 ・= n Low Ga As substrate;) O...n
Type mixed crystal third layer 1...N-type superlattice first layer f)2...N-type superlattice second layer 93...Non-doped ZnS layer 94...N-type ohmic electrode 05...・1M ohm electrode Figure 7 is a cross-sectional structural diagram of a double hetero upper half m-body laser constructed from ZnSSc based material based on conventional knowledge. The first one consisting of Zn5ezTe+ -x of type G −n
layer! 17-Zn5cxTc+ -x first layer ΩB-
1) 2nd layer or above consisting of type Zn5cyTc, -y Applicant Seiko Even Co., Ltd. agent Patent attorney Tsutomu Mogami and 1 other person City 1 day senior 2 Ike 3 days * I + Kunigyu da depression

Claims (4)

[Claims] (1) ZnS_xSe_1_-_x layer (0≦x≦1) and ZnS_ySe_1_-_y layer (0≦y≦1, x≠y)
The first layer consists of a superlattice structure in which ZnS is laminated alternately.
, having a double heterojunction sandwiched between a p-type second layer made of NnSe and having a larger band gap than the first layer, and an n-type third layer made of ZnS and ZnSe and having a larger band gap than the first layer. A semiconductor light emitting device characterized by: (2) The p-type second layer is ZnS_zSe_1_-_z layer (0
≦Z≦1) and ZnS_wSe_1_−_w layer (0≦W≦
1, Z=W), or a p-type mixed crystal given by ZnS_uSe_1_-_u (0≦U≦1), described in claim 1. semiconductor light emitting device. (3) The n-type third layer is ZnS_vSe_1_-_v layer (0
≦v≦1) and ZnS_tSe_1_-t layer (0≦t≦1
, v≠t), or an n-type mixed crystal given by ZnS_sSe_1_-_s (1≦S≦1).
The semiconductor light-emitting device described in 2. (4) A method for manufacturing a semiconductor light emitting device, characterized in that an organic gold layer vapor phase decomposition method (MOVPE method) is used to manufacture a semiconductor light emitting device having a superlattice structure and a mixed crystal layer made of ZnS and ZnSe. .