JPH04100288A - Semiconductor laser and its manufacture - Google Patents
Semiconductor laser and its manufactureInfo
- Publication number
- JPH04100288A JPH04100288A JP21703090A JP21703090A JPH04100288A JP H04100288 A JPH04100288 A JP H04100288A JP 21703090 A JP21703090 A JP 21703090A JP 21703090 A JP21703090 A JP 21703090A JP H04100288 A JPH04100288 A JP H04100288A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- semiconductor laser
- mqw
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 8
- 239000011777 magnesium Substances 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 abstract 3
- 238000011068 loading method Methods 0.000 abstract 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 102100022144 Achaete-scute homolog 2 Human genes 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 101000901109 Homo sapiens Achaete-scute homolog 2 Proteins 0.000 description 1
- 101000703089 Homo sapiens Set1/Ash2 histone methyltransferase complex subunit ASH2 Proteins 0.000 description 1
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、短波長でレーザ発振しかつ信頼性の高いＩｎ
ＡｌＧａＰ系半導体レーザとその製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to a highly reliable In
The present invention relates to an AlGaP semiconductor laser and a manufacturing method thereof.
近年、ＩｎＧａＰ 、又はＩｎＡｌＧａＰを活性層とす
るダブルヘテロ構造の半導体レーザは可視領域で発光す
る材料として注目を集めている。In recent years, double heterostructure semiconductor lasers having an active layer of InGaP or InAlGaP have attracted attention as materials that emit light in the visible region.
上記の構成を有する半導体レーザは従来のＡｌＧａＡｓ
を主体とした半導体レーザよりもその光スポツト径を小
さくする事が原理的に可能であり、例えばコンパクトデ
ィスク、ビデオディスク等への高密度記録が可能となる
。The semiconductor laser having the above configuration is a conventional AlGaAs semiconductor laser.
In principle, it is possible to make the optical spot diameter smaller than that of semiconductor lasers mainly based on semiconductor lasers, making it possible to perform high-density recording on compact discs, video discs, etc., for example.
一方、光ディスクへの情報書込、レーザビームプリンタ
等への応用の観点から〜３０ｍＷを越える高出力、高安
定な半導体レーザも要望されており開発か盛んにおこな
われている。On the other hand, from the viewpoint of application to information writing on optical disks, laser beam printers, etc., there is also a demand for high output, highly stable semiconductor lasers exceeding ~30 mW, and active development is being carried out.
このように、短波長でかつ高出力である半導体レーザは
上記両者の要求を満たすものとしてその出現が期待され
ている。As described above, it is expected that a semiconductor laser with a short wavelength and high output will appear as a device that satisfies both of the above requirements.
ところで現在開発が行なわれているＩｎＡｌＧａＰ系可
視光半導体レーザは主として有機金属化学気相成長法（
以下ＭＯＣＶＤ法と略す）により作製されている。By the way, InAlGaP-based visible light semiconductor lasers currently under development are mainly produced using the metal-organic chemical vapor deposition method (
It is manufactured by the MOCVD method (hereinafter abbreviated as MOCVD method).
ＭＯＣＶＤ法は分子線エピタキシャル成長法（ＭＢＥ法
）等と比較して大量生産に適した成長方法であり、かつ
従来の液相成長法（ＬＰＥ法）では極めてその成長が難
しいＡＩを含む半導体膜が比較的容易に作成可能である
という大きな利点を有している。MOCVD is a growth method that is more suitable for mass production than molecular beam epitaxial growth (MBE), etc., and is suitable for semiconductor films containing AI, which are extremely difficult to grow using conventional liquid phase epitaxy (LPE). It has the great advantage of being easy to create.
ＩｎＡｌＧａＰ系の半導体レーザはＭＯＣＶＤ法により
以下の様に作製される。An InAlGaP semiconductor laser is manufactured by the MOCVD method as follows.
即ち、例えば■族元素の原料ガスとして、トリメチルア
ルミニウム（ＴＭＡＩ）、トリメチルガリウム（ＴＭＧ
）、トリメチルインジウム（ＴＭＩ）を用いる。That is, for example, trimethylaluminum (TMAI), trimethylgallium (TMG
), using trimethylindium (TMI).
又、■族元素の原料ガスとして、ホスフィン（ＰＨｓ）
を用いる。In addition, phosphine (PHs) is used as a raw material gas for group Ⅰ elements.
Use.
これらの混合ガスを例えば、高周波誘導によって加熱さ
れたサセプターに設置されたＧａＡｓ基板上で熱分解さ
せる事により、［ｎ、ＡｌＧａＰ層が形成される。By thermally decomposing these gas mixtures on a GaAs substrate placed on a susceptor heated by high frequency induction, an [n, AlGaP layer is formed.
更にデバイス構成上不可欠な導電型の制御を行なう場合
には、ジメチル亜鉛（ＤＭＺ、）、水素化セレン（Ｈ２
Ｓｅ）等をドーパントとして添加すれば良い。Furthermore, when controlling the conductivity type, which is essential for device configuration, dimethyl zinc (DMZ) and selenium hydride (H2
Se) or the like may be added as a dopant.
（「電子材料Ｊ １９８６年１月号第８９頁参照）しか
し、現在実用化されている１ｎＡＩＧａＰ系半導体レー
ザはその活性層がＩｎＧａＰで形成されておりその発振
波長は〜６７０ｎｍが限界である。(Refer to "Electronic Materials J, January 1986 issue, page 89.") However, the active layer of the 1nAIGaP semiconductor laser currently in practical use is formed of InGaP, and its oscillation wavelength is limited to ~670 nm.
そのため、短波長化の一つの手段として活性層をＩｎＡ
ｌＧａＰ系のお互いの組成を変化させた超薄膜層を積層
して構成したいわゆる多重量子井戸構造（以下ＭＱＷ構
造と略す）半導体レーザか研究されている。Therefore, as a means of shortening the wavelength, the active layer is made of InA.
A so-called multi-quantum well structure (hereinafter abbreviated as MQW structure) semiconductor laser, which is constructed by stacking lGaP-based ultra-thin film layers with mutually different compositions, is being researched.
この構造によれば発光層となるＭＱＷ構造内の井戸層は
ＩｎＧａＰ若しくはＩｎＡｌＧａＰで構成されるが、短
波長化を達成しようとする場合１ｎＡＩＧａＰを採用し
た通常の半導体レーザと比較してＡｔ添加を無くすか、
或いはＡｔの量はより少な（する必要がある。According to this structure, the well layer in the MQW structure that becomes the light emitting layer is composed of InGaP or InAlGaP, but when trying to achieve a short wavelength, At is not added compared to a normal semiconductor laser that uses 1nAIGaP. Suka,
Alternatively, the amount of At may need to be smaller.
しかし、この様なＩｎＡｌＧａＰ系ＭＱＷ構造のエピタ
キシャル膜をＭＯＣＶＤ法の様な高温成長で作製しよう
とする場合ｐ型ドーパントが成長中に活性層に拡散して
しまい上記ＭＱＷ構造の界面平坦性を悪化させてしまう
か、著しい場合はＭＱＷ構造を破壊し、無秩序化してし
まうという問題点があった。However, when attempting to fabricate such an InAlGaP-based MQW structure epitaxial film by high-temperature growth such as MOCVD, p-type dopant diffuses into the active layer during growth, worsening the interface flatness of the MQW structure. There has been a problem that the MQW structure may be damaged or, in severe cases, the MQW structure may be destroyed and disordered.
この様な現象は特に亜鉛をｐ型ドーパントとし、特性温
度の向上、閾値値電流の低下を目的として高ドーピング
を施す場合に著しく、ドーピング量を下げねばならない
等実用化の妨げになっていた。This phenomenon is particularly noticeable when zinc is used as a p-type dopant and highly doped for the purpose of improving the characteristic temperature and lowering the threshold current, and this has hindered practical use, as the amount of doping must be reduced.
（発明が解決しようとする課題）
本発明は上記問題点に鑑み、なされたものであって、そ
の目的はｐ型ドーパントが活性層に拡散してしまい、Ｍ
ＱＷ構造を破壊し、無秩序化することを防止し、可視領
域で信頼性の高い、高性能半導体レーザを提供すること
にある。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned problems, and its purpose is to prevent the p-type dopant from diffusing into the active layer.
The object of the present invention is to provide a high-performance semiconductor laser that is highly reliable in the visible region and prevents the QW structure from being destroyed and disordered.
本発明者らは、この目的を達成するために鋭意検討した
結果、半導体構造、ドーパントの種類、量の選択により
、ＭＱＷ構造を安定に保つ事が可能であることを見出し
、本発明を完成する至った。As a result of intensive studies to achieve this objective, the present inventors discovered that it is possible to maintain a stable MQW structure by selecting the semiconductor structure, the type and amount of dopant, and completed the present invention. It's arrived.
（問題点を解決するための手段） すなわち、本発明は以下を要旨とするものである。(Means for solving problems) That is, the gist of the present invention is as follows.
（１） （ｎｏ、 ５（ＡＩ−Ｇａ＋−ｘ）ｏ、 ｓＰ
とＩｎｏ、 ５（ＡｌｙＧａ１−ｙ）０．、Ｐの多重量
子井戸構造を存する活性層が第一導電型のＩｎｏ、 ５
（ＡｌＧａＰ層ｕ）ｏ、 ｓＰバリヤー層を介した第二
導電型の
Ｉｎｏ、 ５（Ａ１．Ｇａ＋、ｇ）ｏ、 ｓＰクラッド
層と、第一導電型のＩｎｏ、 ｉ（Ａ１ｇＧ＆＋−ｊｏ
、 ｓＰクラッド層（０≦）（＜ｙ〈ｕくＺ≦１． ｙ
≦Ｕ≦２≦１）で夾まれてなることを特徴とするダブル
ヘテロ構造を有する半導体レーザ。(1) (no, 5(AI-Ga+-x)o, sP
and Ino, 5(AlyGa1-y)0. , Ino in which the active layer having a P multi-quantum well structure is of the first conductivity type, 5
(AlGaP layer u)o, Ino of second conductivity type via sP barrier layer, 5(A1.Ga+,g)o, sP cladding layer and Ino of first conductivity type, i(A1gG&+-jo
, sP cladding layer (0≦) (<y〈u Z≦1.y
1) A semiconductor laser having a double heterostructure, characterized in that the semiconductor laser has a double heterostructure.
（２）第一導電型を付与する不純物はシリコン、第二導
を梨を付与する不純物はマグネシウムである事を特徴と
する請求項（１）に記載された半導体レーザ。(2) The semiconductor laser according to claim 1, wherein the impurity imparting the first conductivity type is silicon, and the impurity imparting the second conductivity type is magnesium.
（３）請求項（１）又は請求項（２）に記載された半導
体レーザ用エピタキシャル膜を作成する方法がＭＯＣＶ
Ｄ法である事を特徴とする半導体レーザの製造方法。(3) The method for producing an epitaxial film for a semiconductor laser according to claim (1) or claim (2) is MOCV.
A method for manufacturing a semiconductor laser, characterized by using the D method.
（実施例）
本発明を実施例を用いて、図面を参照しながら説明する
。(Example) The present invention will be described using an example and with reference to the drawings.
第１図は本発明の一例を示す半導体レーザの構造図であ
る。FIG. 1 is a structural diagram of a semiconductor laser showing an example of the present invention.
第２図は本発明の半導体レーザ用エピタキシャル膜を作
製するためのＭＯＣＶＤ装置の一例を示す概略図である
。FIG. 2 is a schematic diagram showing an example of an MOCVD apparatus for manufacturing an epitaxial film for a semiconductor laser according to the present invention.
本発明の半導体レーザの構造を製造工程と共に説明する
と、まず第２図に示すＭＯＣＶＤ装置を用い、高周波誘
導加熱コイル２０によりｎ型のＧａＡｓ基板が載置され
たサセプター２１を所定の温度に加熱した後にＶ族原料
ガスとしてホスフィン（ＰＨ２） 、ＩＩＩ族原料ガス
として例えばトリメチルアルミニウム（ＴＭＡＩ）、ト
リメチルガリウム（ＴＭＧ）、トリメチルインジウム（
ＴＭＩ）を使用し、ｎ型を付与するドーピングガスとし
てモノシラン（ＳｉＨ４）を供給し、ｎ−ＧａＡｓ基板
１の上に、ｎ型のＩｎｏ、 ５（Ａ１．Ｇａ＋−、）ｏ
、 ｓＰクラッド層２を得る。この時温度としては良質
なエピタキシャル膜を得るためには７００°Ｃ〜８２５
°Ｃが好ましく、さらに好ましくは７５０〜８００℃の
温度範囲がよい。圧力は常圧、減圧どちらでもよい。To explain the structure of the semiconductor laser of the present invention together with the manufacturing process, first, using the MOCVD apparatus shown in FIG. Later, phosphine (PH2) was used as a group V raw material gas, and trimethylaluminum (TMAI), trimethylgallium (TMG), trimethylindium (
monosilane (SiH4) is supplied as a doping gas to impart n-type conductivity, and n-type Ino, 5(A1.Ga+-,)o is formed on the n-GaAs substrate 1 using
, to obtain the sP cladding layer 2. At this time, the temperature is 700°C to 825°C to obtain a good quality epitaxial film.
The temperature range is preferably 750 to 800°C, more preferably 750 to 800°C. The pressure may be either normal pressure or reduced pressure.
又ＡｌとＧａの組成はＴＭＡＩ、 ＴＭＧの供給量を変
化させることによって変えることができる。ドーパント
としてはシリコンが最適であり、その濃度は１×１０Ｉ
７ａｎ−３〜２ Ｘ １０”ａｎ−’になるように設定
する事が必要である。Furthermore, the composition of Al and Ga can be changed by changing the amount of TMAI and TMG supplied. Silicon is the best dopant, and its concentration is 1×10I.
It is necessary to set it so that it becomes 7an-3~2 x 10"an-'.
その上に、井戸層Ｉｎｏ、 ５（ＡｌｘＧａ＋−ｘ）ｏ
、 ｓＰと障壁層Ｉｎｏ、 ５（ＡｌｙＧａ＋−ｙ）ｏ
、 ｓＰからなるＭＱＷ層３を原料ガスの切換えを急峻
に行なうことにより形成する。On top of that, a well layer Ino, 5(AlxGa+-x)o
, sP and barrier layer Ino, 5(AlyGa+-y)o
, sP is formed by rapidly switching the raw material gases.
ＭＱＷ中の井戸層、障壁層の各厚みはレーザの波長を短
波長化する点、又作製しやすさの点から３０〜２００人
が好ましく、又積層の数は各々３層から１０層程度が実
用的である。The thickness of each well layer and barrier layer in the MQW is preferably 30 to 200 layers from the viewpoint of shortening the wavelength of the laser and ease of manufacturing, and the number of laminated layers is approximately 3 to 10 layers each. It's practical.
次に、ドーパントとしてシリコンを５ｘｔｏ”〜Ｉ Ｘ
ＩＯ”ａｎ−’添加した０、２μｍ以下の厚みのｎ−１
ｎｏ、 ５（Ａ１．Ｇａ＋−、）ｏ、 ｉＰバリヤー層
４を、更にその上に、ドーパントとしてマグネシウムを
２Ｘ１０”〜３Ｘ１０Ｉ″Ｃｍ−’添加したｐ−１ｎｏ
、 ａ（Ａ１．Ｇａ＋−＊）ｏ、 ｓＰクラッド層５を
形成する。前記第一導電型のｎ−Ｉｎｏ、 ５（Ａｌｕ
Ｇａ＋−ｖ）ｏ、 ｓＰバリヤー層４の厚みが１００人
より薄くなると又はシリコンの添加量が５Ｘ１０”ａｎ
−’より少くなると、後記第二導電型のｐ−Ｉｎｏ、
ｓ（Ａ１ｇＧａ＋−ｍ）ｏ、 ｓＰクラッド層５からの
マグネシウムのＭＱＷ層への拡散を防止しきれず、又０
．２μｍより厚くなるとＭＱＷ活性層へ注入効率が劣化
してしまい、好ましくない。Next, silicon is added as a dopant to 5xto”~I
IO"an-' added n-1 with a thickness of 0.2 μm or less
no, 5(A1.Ga+-,)o, p-1no with iP barrier layer 4 further added with magnesium as a dopant from 2X10" to 3X10I"Cm-'
, a(A1.Ga+-*)o, sP cladding layer 5 is formed. the first conductivity type n-Ino, 5(Alu
Ga+-v) o, sP If the thickness of the barrier layer 4 is less than 100mm or the amount of silicon added is 5X10"an
-', p-Ino of the second conductivity type described later,
s(A1gGa+-m)o, the diffusion of magnesium from the sP cladding layer 5 into the MQW layer cannot be prevented completely, and 0
．． If it is thicker than 2 μm, the efficiency of injection into the MQW active layer will deteriorate, which is not preferable.
更にシリコンの添加量がｌＸｌ０”ａｎ−’を越えると
シリコン自身のＭＱＷ層３への拡散が無視できずこれも
半導体レーザの特性を劣化させることとなり好ましくな
い。Furthermore, if the amount of silicon added exceeds lXl0"an-', diffusion of silicon itself into the MQW layer 3 cannot be ignored, which is also undesirable because it deteriorates the characteristics of the semiconductor laser.
上部のクラッド層５のマグネシウムの添加量は３Ｘ１０
”ａｎ−”より多くなるとＭＱＷ層への拡散を防ぎきれ
ず、又２ＸＩＱ”ａｍ−”より小さいとクラッド層の比
抵抗増加による半導体レーザの信頼性の低下を招き好ま
しくない。The amount of magnesium added to the upper cladding layer 5 is 3X10
If it is larger than "an-", diffusion into the MQW layer cannot be prevented, and if it is smaller than 2XIQ "am-", the reliability of the semiconductor laser will decrease due to an increase in the specific resistance of the cladding layer, which is not preferable.
次に、ｐ−ＧａＡｓキャップ層６を形成する。Next, a p-GaAs cap layer 6 is formed.
第１表に示すように、構成元素の組成及びドーパントの
種類、濃度、厚みを変えて、実施例１〜１０のものを作
製した。又同様にドーパントの種類、濃度、厚みを変え
て、比較例１〜４のものを作製した。As shown in Table 1, Examples 1 to 10 were prepared by changing the composition of the constituent elements and the type, concentration, and thickness of the dopant. Comparative Examples 1 to 4 were also produced by changing the type, concentration, and thickness of the dopant.
これらによって、得られたエピタキシャル、ウェハーを
用いて、上記ＧａＡｓキャップ層６をエツチングにより
除去し、アルゴンレーザを用いたフォトルミネッセンス
（ＰＬ）法によりＭＱＷ活性層の発光波長、発光強度を
測定した。Using the epitaxial wafer thus obtained, the GaAs cap layer 6 was removed by etching, and the emission wavelength and emission intensity of the MQW active layer were measured by a photoluminescence (PL) method using an argon laser.
又上記エピタキシャルウェーハよりストライブ幅７μｍ
、共振器長３００μｍのリッジ導波型半導体レーザを作
成し、発振波長、閾値電流、特性温度を測定した。Also, the stripe width is 7 μm from the above epitaxial wafer.
A ridge waveguide semiconductor laser with a cavity length of 300 μm was fabricated, and the oscillation wavelength, threshold current, and characteristic temperature were measured.
その結果を第１表に併せて示した。活性層と第二導電型
のｐ−Ｉｎｏ、 ５（Ａ１．Ｇａ＋−ｇ）ｏ、 ｓＰク
ラッド層の間に、第一導電型のｎ−Ｉｎｏ、 ５（Ａ１
．Ｇａ＋−）ｏ、 ｓＰバリヤー層を設けた実施例１〜
１０のものは、閾値電流（ｍＡ）が小さく、特性温度が
高く良好であったが他のドーパントを使用したり、ドー
パント量が不適正なものは、閾値電流が高く、又特性温
度Ｋが低く、良好な半導体レーザは得られなかった。The results are also shown in Table 1. Between the active layer and the second conductivity type p-Ino, 5(A1.Ga+-g)o, sP cladding layer, the first conductivity type n-Ino, 5(A1
．． Example 1 with Ga+-)o, sP barrier layer
Item No. 10 had a small threshold current (mA) and a high characteristic temperature, which was good. However, those that used other dopants or had an inappropriate amount of dopant had a high threshold current and a low characteristic temperature K. However, a good semiconductor laser could not be obtained.
（発明の効果）
本発明によれば第二導電型のクラッド層と活性層の間に
バリヤー層を設けることによって、第二導電型のクラッ
ド層のドーパントであるマグネシウムの拡散を防止する
ことができるので、短波長でレーザ発振しかつ信頼性の
高いＩｎＡｌＧａＰ系半導体を得ることができる。(Effects of the Invention) According to the present invention, by providing a barrier layer between the second conductivity type cladding layer and the active layer, diffusion of magnesium, which is a dopant in the second conductivity type cladding layer, can be prevented. Therefore, it is possible to obtain an InAlGaP-based semiconductor that oscillates at a short wavelength and has high reliability.
第１図は本発明の一例を示す半導体レーザの構造図、第
２図は本発明の半導体レーザの製造方法に使用するＭＯ
ＣＶＤ装置の概略図の一例である。
１ ： ｎ−ＧａＡｓ基板
２ ： ｎ−１ｎｏ、 １（Ａ１．Ｇａ＋−ｇ）ａ、
ｓＰクラッド層ｎ−Ｉｎｏ、 ５（Ａｌ−Ｇａ＋−−）
ｏ、 ｓＰバリヤー層ｎ−１ｎｏ、 ５（Ａ１．Ｇａ＋
−、）ｏ、 ｓＰクラッド層ｐ−ＧａＡｓキャップ層
ＰＨ５（ホスフィン）
ＡＳＨ２（アルシン）
９ ： ５ｉＨｎ （モノシラン）
１０ ： Ｈ２Ｓｅ （セレン化水素）１１ ： ＴＭ
Ｇ（トリメチルガリウム）１２ ： ＴＭＡＩ （トリ
メチルアルミニウム）１３ ： ＴＭＩ（）−リメチル
インジウム）１４ ： ＣＰ２Ｍｇ（シクロペンタジェ
ニルマグネシウム）１５ ： ＤＭＺｎ （ジメチル亜
鉛）１６：ロードロックシステム
１７：真空ポンプ
Ｉ８：フィルター
１９：反応管
２０ ： ＲＦコイル
２１：サセプタ
２２：コントロールバルブ
２３：マスフローコントローラー
２４ ： Ｈ２ガス
特許出願人 電気化学工業株式会社FIG. 1 is a structural diagram of a semiconductor laser showing an example of the present invention, and FIG. 2 is an MO used in the method of manufacturing the semiconductor laser of the present invention.
It is an example of the schematic diagram of a CVD apparatus. 1: n-GaAs substrate 2: n-1no, 1(A1.Ga+-g)a,
sP cladding layer n-Ino, 5 (Al-Ga+--)
o, sP barrier layer n-1no, 5(A1.Ga+
-, )o, sP cladding layer p-GaAs cap layer PH5 (phosphine) ASH2 (arsine) 9: 5iHn (monosilane) 10: H2Se (hydrogen selenide) 11: TM
G (trimethyl gallium) 12: TMAI (trimethyl aluminum) 13: TMI ()-limethyl indium) 14: CP2Mg (cyclopentadienyl magnesium) 15: DMZn (dimethyl zinc) 16: Load lock system 17: Vacuum pump I8: Filter 19: Reaction tube 20: RF coil 21: Susceptor 22: Control valve 23: Mass flow controller 24: H2 gas patent applicant Denki Kagaku Kogyo Co., Ltd.
Claims (3)
＿０＿．＿５ＰとＩｎ＿０＿．＿５（Ａｌ＿ｙＧａ＿１
＿−＿ｙ）＿０＿．＿５Ｐの多重量子井戸構造を有する
活性層が第一導電型のＩｎ＿０＿．＿５（Ａｌ＿ｕＧａ
＿１＿−＿ｕ）＿０＿．＿５Ｐバリヤー層を介した第二
導電型の Ｉｎ＿０＿．＿５（Ａｌ＿ｚＧａ＿１＿−＿ｚ）＿０＿
．＿５Ｐクラッド層と、第一導電型のＩｎ＿０＿．＿５
（Ａｌ＿ｚＧａ＿１＿−＿ｚ）＿０＿．＿５Ｐクラッド
層（０≦ｘ＜ｙ＜ｕ＜ｚ≦１、ｙ≦ｕ≦ｚ≦１）で夾ま
れてなることを特徴とするダブルヘテロ構造を有する半
導体レーザ。(1) In_0_. _5 (Al_xGa_1_-_x)
＿0＿． _5P and In_0_. _5(Al_yGa_1
＿−＿y)＿０＿. The active layer having a _5P multi-quantum well structure is made of In_0_. of the first conductivity type. _5(Al_uGa
_1_-_u)_0_. In_0_. of second conductivity type via _5P barrier layer. _5(Al_zGa_1_-_z)_0_
．． _5P cladding layer and first conductivity type In_0_. ＿５
(Al_zGa_1_-_z)_0_. A semiconductor laser having a double heterostructure, characterized in that it includes a 5P cladding layer (0≦x<y<u<z≦1, y≦u≦z≦1).
電型を付与する不純物はマグネシウムである事を特徴と
する請求項（１）に記載された半導体レーザ。(2) The semiconductor laser according to claim 1, wherein the impurity imparting the first conductivity type is silicon, and the impurity imparting the second conductivity type is magnesium.
体レーザ用エピタキシャル膜をＭＯＣＶＤ法によって、
作製することを特徴とする半導体レーザの製造方法。(3) The epitaxial film for a semiconductor laser according to claim (1) or claim (2) is formed by the MOCVD method.
1. A method of manufacturing a semiconductor laser, comprising: manufacturing a semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21703090A JPH04100288A (en) | 1990-08-20 | 1990-08-20 | Semiconductor laser and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21703090A JPH04100288A (en) | 1990-08-20 | 1990-08-20 | Semiconductor laser and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04100288A true JPH04100288A (en) | 1992-04-02 |
Family
ID=16697740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21703090A Pending JPH04100288A (en) | 1990-08-20 | 1990-08-20 | Semiconductor laser and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04100288A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306923A (en) * | 1991-12-04 | 1994-04-26 | France Telecom | Optoelectric device with a very low series resistance |
| EP1320158A1 (en) * | 2001-12-13 | 2003-06-18 | Agilent Technologies, Inc. (a Delaware corporation) | Means of controlling dopant diffusion in a semiconductor heterostructure |
| GB2444279A (en) * | 2006-11-30 | 2008-06-04 | Bookham Technology Plc | Optoelectronic device |
-
1990
- 1990-08-20 JP JP21703090A patent/JPH04100288A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306923A (en) * | 1991-12-04 | 1994-04-26 | France Telecom | Optoelectric device with a very low series resistance |
| EP1320158A1 (en) * | 2001-12-13 | 2003-06-18 | Agilent Technologies, Inc. (a Delaware corporation) | Means of controlling dopant diffusion in a semiconductor heterostructure |
| GB2444279A (en) * | 2006-11-30 | 2008-06-04 | Bookham Technology Plc | Optoelectronic device |
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