JPS6395692A - Semiconductor light-emitting device and manufacture thereof - Google Patents

Abstract

PURPOSE:To realize a short-wave length light-emitting device having high luminous efficiency and high brightness by forming the semiconductor light-emitting device having double hetero-structure by using a superlattice structure in which ZnSxTe1-x and ZnSyTe1-y (0<=x, y<=1, Xnot equal to Y) are laminated alternately. CONSTITUTION:ZnS 2 containing N-type dopants in 20Angstrom and ZnTe 3 containing no dopant in 8Angstrom are laminated alternately onto the surface of an N-type GaAs substrate 1 at 360 periods, thus shaping an N-type superlattice third layer 4. ZnS 5 including the N-type dopant in 5Angstrom and ZnTe 6 including no dopant in 15Angstrom are laminated alternately at 50 periods, thus forming an N-type superlattice first layer 7. ZnTe 8 containing a P-type dopant in 10Angstrom and ZnS 9 containing dopant in 5Angstrom are laminated alternately at 670 periods, thus shaping a P-type superlattice second layer 10. Electrodes 11, 12 are formed on the P-type superlattice second layer 10 and the rear side of the substrate 1 through evaporation, and thermally annealed. When forming superlattice structure, a MOVPE method is used. a.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a structure and a manufacturing method of a double heterojunction structure of a semiconductor light emitting device such as a visible light semiconductor laser or a light emitting diode made of Zn5s ZnTe.

[Conventional technology]

Currently, GaAlAs-based materials,
Materials such as Jr+GaAs1' series are widely used. However, the wavelength of semiconductor lasers obtained using such materials is only up to 62 Onm, and wavelengths smaller than this have not been obtained.

Semiconductor lasers have been put to practical use as light sources for video discs (VD), digital audio discs (DAD), and the like. When applying a semiconductor laser to such a device, it is preferable that its oscillation wavelength be shorter. This is because the shorter the wavelength, the better the beam convergence and the easier control of the optical system of the above device. Furthermore, in the case of optical memory devices, which are currently being actively researched in various fields,
Since the shorter the wavelength of the light source, the higher the C/N ratio and the higher the recording density can be expected, it is imperative to shorten the wavelength of the light source.

n-Vl group compound semiconductors including zinc sulfide (ZnS) and zinc telluride (ZnTC) are GaAlAs5
Since it has a wider energy bandgap than InGaAsP and is a direct transition type material, it is attracting attention as a material that can oscillate at a shorter wavelength than before. However,
The IT-Vl group compound semiconductor is a III-based compound semiconductor such as GaAlAs.
Unlike the -V group compound semiconductor, it has a large self-compensation effect, so it is difficult to form an I'n junction using a material.

For example, in ZnS%lnSe, only n-type conductivity type is obtained, and in ZnTe, only P-type conductivity type is obtained. Therefore, an injection type light emitting device using a combination of Zn5-ZnTe has been considered, and a double heterojunction type semiconductor laser using these combinations has also been considered (Public publication Japanese Patent Application Laid-Open No. 48-10/1484) Fig. 7 98 shows a double hetero type semiconductor laser made of ZnSTc-based material constructed based on this knowledge, and 98 is Zn5xTc+ -x
(0≦X≦1), 99 is a P-type Zn5yTe+ −y (0≦y≦1) installed on the first layer.
), the second layer 100 is an n-type ZnSzTe1 layer placed on the opposite side of the first layer to the surface on which the second layer is formed.
This is the third layer consisting of z (0≦z≦1).

In such a laser, by making the band gap of the second layer 99 and the third layer 100 larger than that of the first layer 98,
Theoretically, electrons and holes can be well confined within the first layer 98 by applying a forward bias between the second layer 99 and the third layer 100, similar to the well-known double hetero type GaAlAs semiconductor laser. At the same time, the light obtained by the recombination of electrons and holes is also confined within the first layer 98, so that it can be extracted as laser light.

However, in reality, laser oscillation has not been achieved. The reason for this is that a large number of interface states are formed near the interfaces of the first layer 98, second layer 99, and third layer 100, and the interface states act as non-emissive centers, so that the injected electrons and positive This is thought to be because the holes are trapped in such non-luminous centers and do not contribute to luminescence.

[Problem that the invention seeks to solve]

The above-mentioned conventional technology addresses the problem that a large number of interface states generated at the boundaries of each layer act as non-emissive centers. Therefore, the present invention is intended to solve these problems.
The purpose is to provide a structure of a ZnSTc semiconductor laser capable of emitting short wavelength laser light and a method for manufacturing the same.

[Means for solving problems]

The semiconductor light emitting device of the present invention is characterized in that a layered film having a superlattice structure made of ZnSTe is sandwiched between layered films having a P-type and n-type superlattice structure or a mixed crystal ZnSTe-based layer. In addition, as a method for forming these laminated films, the MOV I) E method, which can control the formation of extremely thin films, is used.

[Effect]

Zn5s and ZnTe have 5.4003 people and 6.00 people, respectively.
It has a lattice constant of 1024 people, and its lattice mismatch is 11.
It is 4%. When a plurality of Zn5s ZnTe layers are alternately stacked at a period of several to several tens of layers, a strained superlattice is formed due to lattice mismatch. In the strained superlattice, strain energy is concentrated at the layer interface of 4t'', so the formation of interface states is suppressed, and a good epitaxial thin film can be formed.

〔Example〕

FIG. 1 is a cross-sectional configuration diagram of a semiconductor light emitting device having a double heterojunction structure in an embodiment of the present invention.

On the (001) plane of the n-type GaAs substrate 1, 20 layers of ZnS2 containing an n-type dopant and 8 layers of ZnTe3 containing no dopant were alternately stacked to form the n-type superlattice third layer 4. do. By repeating the ZnS layer and the ZnTe layer 360 times, the n-type superlattice third layer 4 has a thickness of 1 μm.

Furthermore, 5 layers of ZnS3 containing an n-type dopant and 15λ layers of ZnTe3 containing no dopant were alternately stacked, and
A type superlattice first layer 7 is formed. By repeating the Zn3 layer and the ZnTe layer 50 times, the n-type superlattice first layer 7 becomes 0.
．． The thickness is 1 μm.

Furthermore, 10 ZnTe3 containing ■) type dopants,
Five layers of ZnS9 containing no dopant were alternately stacked, and P
A type superlattice second layer 10 is formed. By repeating the ZnTe layer and ZnS layer for 670 cycles,! ) type superlattice second layer 10 has a thickness of 1 μm.

Then, an I) type ohmic electrode 11 made of ΔU is formed on the P type superlattice second layer 10, and an n type ohmic electrode 12 made of 10 is formed on the back side of the GaAs substrate 1 by vapor deposition, and thermal annealing is performed. A semiconductor light emitting device having a double heterojunction structure as shown in FIG. 1 was obtained. A sharp pure green light emission peak centered at 556 nm was obtained from this semiconductor light emitting device.

When forming these superlattice tM structures, MOVl)
The Ishi method was used.

In FIG. 2, (1) shows a schematic diagram of the MOV I) E apparatus used in the present invention.

A graph eye) 1 the receptor 14 is set inside a horizontal reactor 13 made of transparent quartz, and a substrate 15 is placed thereon.

The graphite susceptor 14 and the substrate 15 are heated by a high frequency induction heating coil 16. The substrate temperature is monitored by a thermocouple 17 whose tip is embedded inside the susceptor.

The reactor 13 is connected to a high vacuum exhaust system 19 via a valve 18. Further, the reaction gas leaving the reactor 13 is connected to a rotary pump 21 via a valve 20.
The exhaust gas treatment device 22 is reached.

The valve 20 has the function of keeping the internal pressure of the reactor 18 constant.

Valves 23-32 are three-way valves that supply the incoming gas to either main life 33.34 or waste line 35.36. The main lines 33 and 34 are introduced into the reactor 13 after merging. Waste line 35.38
The gases reach the rotary pump 39 via the pulp tubes 37 and 38, respectively, and are introduced into the waste gas treatment device 22. Valves 38.37 have the function of regulating the internal pressure of waste lines 35.36, L, waste lines 35 and 3, respectively.
Adjust the internal pressures of the main lines 33 and 34 to be equal to that of the main lines 33 and 34, respectively. 40 is a mass flow controller "1-ra" which precisely controls the gas flow rate. A cylinder 41 is filled with hydrogen gas, which is a carrier gas, and is supplied after being highly purified by a purifier 42. Bubbler 43 is filled with an adduct, which is maintained at a predetermined temperature by a constant temperature bath 44.The adduct contains an alkyl compound of Zn,
A compound in which S and SC alkyl compounds are combined,
Since it is a liquid in the temperature range from −20° C. to around room temperature, it can be supplied as vapor by bubbling carrier gas. The supply amount is determined by the bubbling gas flow rate and bubbler E.
Can be controlled by 1 degree.

The bubbler 45 is filled with dimethyl tellurium, and is maintained at a predetermined temperature by a constant temperature bath 4G. Bubbler 4
7 is filled with 1 ft' of triedylaluminum as a donor dopant, and is maintained at a predetermined temperature in a constant temperature bath 48. The valves 49 to 51 have a pressure regulating function to maintain the upstream side of the valves 49 to 51, including the liquid levels of the adduct, dimethyl tellurium, and dopant inside the bubbler, at atmospheric pressure. The cylinders 52 and 53 are each filled with hydrogen sulfide diluted with hydrogen gas and ammonia gas as an acceptor dopant, and the supply amount is controlled by the mass flow controller 40.

The manufacturing procedure of the semiconductor superlattice WI structure is described below.

Valves 24, 26, and 28 are each supplied with a carrier gas containing adduct, dimethyltellurium, and triethylaluminum vapors, and valves 23, 25, and 27 are supplied with the same flow rate of carrier gas. Also valve 20.31
are supplied with hydrogen sulfide and ammonia, respectively.
Valves 30 and 32 are each supplied with carrier gas at the same flow rate as valves 29 and 31. main line 33
．． 3/l and waste lines 35 and 38 have the same flow 11, respectively.
[For diluting raw materials - Toyaria gas is flowing. The internal pressure of the main life lines 33 and 34 corresponds to the reaction determined by the gas flow rate and valve 20, and the internal pressure of the waste lines 3B and 35 is determined by the valves 37 and 38.
are set equal to the internal pressure of 34.33, respectively. Valve 23 and 24.25 and 26.27 and 28
．． 29 and 30, 31 and 32 are operated in pairs, respectively. That is, when one is connected to the main line, the other is connected to the waste line. When switching gases, switch both at the same time. With this operation, reactor 1
3. Main life 33.34 and disposal line 35.30
The feed gas can be switched between the main line and the waste line while keeping the internal pressure constant. Fluctuations in the internal pressure of the reactor 13 due to gas switching induce fluctuations in the growth rate, and should be suppressed as much as possible to prevent uneven thickness of the thin film constituting the superlattice structure and in-plane composition distribution. This is desirable.

When producing an n-type superlattice structure by switching between hydrogen sulfide and dimethyl tellurium, the following procedure is performed. When supplying dimethyl tellurium, connect valves 2G, 27.30 to main line 33.34, and connect valves 25.28.20 to main line 33.34.
connects to waste line 35.3G. At this time, dimethyltellurium is supplied to the reactor 13 via the main line 33, and the carrier gas containing hydrogen sulfide and triethylaluminum is discarded. Then valves 25 and 26 are switched simultaneously. At this time, only the carrier gas is supplied to the reactor 13, and the growth is interrupted, resulting in an interval state. Thereafter, a carrier gas containing hydrogen sulfide and triethylaluminum is supplied to the reactor 13 by simultaneously switching the valves 27, 28, 20, and 30. In the same manner, dimethyl tellurium and hydrogen sulfide, by continuing to switch the valves through intervals of appropriate length,
A carrier gas containing triethylaluminum can be alternately supplied to the reactor 13. Note that during this growth, valve 2
By connecting 4.32 to the main line side and valve 23.31 to the waste line side, the appendix can provide continuous supply.
Also, ammonia gas is continuously discharged.

FIG. 3 shows an embodiment of the sequence for supplying raw material gas to the reactor 13 according to the present invention. By continuously supplying the adduct and alternately supplying dimethyl tellurium and a carrier gas containing hydrogen sulfide and triethylaluminum, n-type ZnS
- Forming a ZnTe superlattice structure. In FIG. 3, the horizontal axis shows the change in time. 54.55.56.5
7 are respectively a and 1 adduct, hydrogen sulfide, diltyl tellurium,
It shows the supply timing of triethylaluminum. 58, 50, 60, 01 indicate a state in which raw materials are being supplied to the reactor, and 62, 63, 64, 65 indicate a state in which raw materials are not supplied to the reactor.

As is clear from the combination of raw material supplies, growth starts from time zero, 66 indicates the time period during which ZnS:AI is grown, 67 indicates the time period during which ZnTe is grown, and 68 indicates the interval at which the growth is interrupted. The thickness of ZnS:AI and ZnTe are changed by setting 66 and 670 hours, respectively. Sequence/drive the three-way pulps 23 to 32 in Figure 2
The above-described growth sequence can be easily carried out by using the following method.

FIG. 4 shows an example of a sequence for supplying raw material gas to the reactor 13 according to the present invention. A superlattice structure is formed by repeating the simultaneous supply of the adduct, hydrogen sulfide, and triethylaluminum, and the adduct and dimethyl tellurium.

In FIG. 4, the horizontal axis shows the change in time. 69.
70.71.72 are adducts, M hydrate 3='
, dimethyl tellurium, and triedylaluminum ram are shown, and 73.74.75.76 shows the state in which the raw materials are being supplied to the reactor, and 77.78.79.80
indicates a state in which raw materials are not supplied.

Growth starts from time zero, 81 is ZnS:Al, 82
83 indicates the time period during which ZnTe is grown, and 83 indicates the interval at which the growth is interrupted.

According to the sequence shown in FIG. 3 or 4, a superlattice structure was manufactured under the following growth conditions.

Growth temperature: 375@C Reactor internal pressure 70Torr (ells) = Zn S (elfs);
° bubbler/g gas amount: 10 m1/mn at bubbler temperature -15"C (vapor pressure at -15 °C is 21 mml1 g) Hydrogen base 2% 11f'S supply amount: 250 m1/mn (cl-17); Bubbling gas amount: 30 m1/m1n at bubbler temperature 0°C (vapor pressure at 0°C is 3 mml1g) <c;IF6>3'AI
Bubbling gas i; 1: 20 m1/mi at bubbler temperature 40''C (vapor pressure at /IO'c is 0.1
5mm1lff) Hydrogen flow rate flowing through 3 lines 3.34.35.36: 2.51/min per each line Under conditions of above, the growth rate of ZnS:Al and ZnTe was about 1 person/sec. Growth started with ZnS:A1 layer and ended with ZnT e A'). Based on the growth rate, the supply times of dimethyltellurium, hydrogen sulfide, and triethylaluminum were set to determine the superlattice structure.

The interval was 1 to 2 seconds.

In the method for manufacturing a superlattice according to the present invention, the above-mentioned (el
fs ) t Z n S (ells) *Not only adducts, but not shown in Table 1, R,' 7n, R* Ss
A superlattice structure can also be produced using adducts obtained by all combinations of R*'SC,
When the supply amount determined by the vapor pressure of the adduct and the bubbling gas flow rate was the same, a superstructure exhibiting properties similar to those of the above example could be manufactured.

<Table 1> In addition, as a Zn source, (clls' ) I Zn)
The same holds true when (Ct IIs ) t Zn is used.

In addition, in the schematic diagram of the MOVPE apparatus shown in FIG. 2, for example, Zn310-ZnSo-
It is also possible to fabricate a superlattice containing a mixed crystal layer, such as + Tc, . . . m 50.

FIG. 5 is a diagram showing the manufacturing process of a semiconductor light emitting device having a double heterojunction structure in an embodiment of the present invention.

On the (001) plane of the n-type GaAs substrate 84, 20 layers of ZnS containing an n-type dopant and 20 layers of ZnS containing no dopant were placed.
Eight layers of nTe are alternately formed in 41 layers in 360 periods to form a third n-type superlattice Aljj85 with a thickness of 1 μm.

Further, 5 layers of ZnS containing an n-type dopant and 15 layers of ZnTe containing no dopant are alternately stacked for 50 periods to form an n-type superlattice first layer 86 with a thickness of 0.1 μm.

Then, 10 layers of ZnTe containing a P-type dopant and 5 layers of ZnS containing no dopant are alternately stacked for 670 cycles to form a second layer 87 of type superlattice with a thickness of 1 μm.

Through the above process, the cross-sectional structure shown in FIG. 5(a) can be obtained.

Next, the n-type superlattice third layer 85, the n-type superlattice first layer 8G, P
The mold superlattice second layer 87 is removed using a photophosphorography method and an etching method while remaining in striped form,
The cross section shown in FIG. 5(b) can also have the configuration shown in FIG.

Then, the n-type superlattice third layer 85 left in the form of a stripe, n
I! :! The side surface portion of the 111 structure consisting of the first superlattice layer 86 and the second P-type superlattice layer 87 is formed with a non-doped ZnS layer 88, and the cross-sectional structure shown in FIG. 5(C) is obtained. tLru.

On the j111ri n-type GaAs substrate 84 side, n
type ohmic electrode 89 on the P type superlattice No. 19187 side,
1) Install type ohmic electrode 00, as shown in Figure 5.

(The configuration of the cross-sectional structure shown in (I) is obtained.

FIG. 6 shows the structure of a semiconductor light emitting device having a double heterojunction (1'l structure) in an embodiment of the present invention.

In a process similar to that shown in FIG.
,! l': On the tentative 01 (001) plane, an n-type mixed crystal third layer 92 is formed with a thickness of 1 μm from a Z nso , ss Tea -sh mixed crystal containing an n-type dopant. Furthermore, 5 layers of ZnS containing an n-type dopant and 15 layers of ZnTe containing no dopant were alternately layered 50 times to form an n-type superlattice first layer 93 with a thickness of 0.1 μm. do. and 10 ZnTe containing type I) dopants,
A type I) superlattice second layer 94 having a thickness of 1 μm is formed by alternately stacking five layers of ZnS containing no dopant for 670 periods.

Next, the n-type mixed crystal third layer 92, the n-type superlattice first layer 93, and the p-type superlattice second layer 94 are removed in a striped form, and
The side surface portion is formed with a non-doped ZnS layer 95, and an n-type ohmic electrode 96 is installed on the n-type GaAs substrate 91 side, a l)-type ohmic electrode 97 is installed on the P-type superlattice second layer 94 side, and The structure shown in FIG. 6 is obtained.

The light emitting device according to the present invention has a superlattice structure of ZnS and ZnT.
It is not limited to those consisting only of
A superlattice structure of mixed crystals (X≠y) may also be used.

Furthermore, the n-type third layer 85 in FIG. 5 is replaced with n-type Zn5xTc'.
+ -z (0≦z≦1) mixed crystal, P-type superlattice second layer 8
It can be easily inferred that a structure in which 7 is composed of a P-type Zn5wTe'; -w (0≦w≦l) mixed crystal also has a similar function.

Further, the n-type mixed crystal third layer 92 in FIG. 6 has an n-type superlattice 1/,
A combination of seven layers or an n-type mixed crystal layer also belongs to Claim I]3.

〔Effect of the invention〕

According to the present invention, as stated above, N Zn5xTe, -
× and Zn5yTe'+ -y (0≦XN y≦1,
≠Y) using a superlattice structure that alternately stacks layers to double! 1. By forming a semiconductor light-emitting device having an Ft structure, it was possible to realize a short-wavelength light-emitting device with high luminous efficiency and high brightness, which was not possible before. Furthermore, M
Using the OVPE method, Zn5xTc', -y (0≦x, y
≦1, x * y)), it has become possible to form a superlattice structure of high quality and good homogeneity with good reproducibility. Is the present invention a short wavelength light emitting device? : I am convinced that it will greatly contribute to improving the performance of the z1.

[Brief explanation of the drawing]

FIG. 1 shows a double heterojunction R in an embodiment of the present invention.
, is a cross-sectional configuration diagram of a semiconductor light emitting device manufactured by RT. 1... N-type GaAs substrate 2... ZnS3 containing n-type dopant... ZnTe4 containing no dopant... N-type superlattice third layer 5... ZnS6 containing nW dopant... ZnTe7 containing no dopant...N-type superlattice first layer 8...ZnTe9 containing 1) type dopant...ZnS containing no dopant 10...P-type superlattice second layer 11... I) type ohmic electrode 12...n type ohmic electrode FIG. 2 is a schematic diagram of the configuration of the MOV P E device used in the present invention. 13...Horizontal reactor made of transparent quartz glass 14...Susceptor made of graphite 15...Member (plate) 16...High frequency induction heating coil 17...Thermocouple 18...Valve 19... ...High vacuum exhaust system 20...Valve 21...L-tally pump 22...Waste gas treatment device 23-32...Three-way valve 33.34...Main line 35.36... Disposal line 37.38...Valve 39...[1-Turbo/pu40...Mass 70-Con) Roller 41...Hydrogen gas cylinder 42...Hydrogen purifier 43...Contains adduct Bubbler 44... Constant temperature bath 45... Bubbler 46 containing dimethyl tellurium...
Constant temperature bath 47... Bubbler 48 containing triethyl aluminum... Constant temperature baths 49 to 51... Valve 52 for controlling the pressure adjustment function.
...Cylinder 53 containing hydrogen sulfide diluted with hydrogen gas...Cylinder containing ammonia diluted with hydrogen gas Figure 3 shows the implementation of the sequence of supplying raw material gas to the reactor according to the present invention. Diagram showing an example. 54...Adduct supply timing 55...Hydrogen sulfide supply timing 56...Dimethyltellurium supply timing 57...
Supply timing of triethylaluminum 58... State where the adduct is being supplied to the reactor 59.
...Situation 60 where hydrogen sulfide is supplied to the reactor...
State 61 in which dimethyl tellurium is supplied to the reactor... State 62 in which triethylaluminum is supplied to the reactor... (V, where 1 addition is not supplied to the reactor,
State 63...Situation 0 where hydrogen sulfide is not supplied to the reactor
4... State where dimethyltellurium is not supplied to the reactor 65... State where triethylaluminum is not supplied to the reactor 66... Time period during which ZnS:A+ is grown 67...
- Time period 68 during which zn're is grown...interval at which growth is interrupted FIG. 4 is a diagram showing an example of the sequence for supplying the mouth gas to the reactor according to the present invention. 69...A (1-day supply timing 70...Hydrogen sulfide supply timing 71...Dimethyltellurium supply timing 72...
Supply timing of triethylaluminum 73... State where the adduct is being supplied to the reactor 74.
・Hydrogen sulfide is supplied to the reactor g f375・
... State 7G in which dimethyl tellurium is supplied to the reactor ... State 77 in which triethylaluminum is supplied to the reactor ... State 78 in which the adduct is not supplied to the reactor
... State where hydrogen sulfide is not supplied to the reactor 79 ... State where dimethyl tellurium is not supplied to the reactor 80 ... State where triethylaluminum is not supplied to the reactor 81 ... ZnS: Time period 82 when A+ is growing...
・Time period 83 during which ZnTe is grown...Interval at which growth is interrupted FIGS. Figure shown. 84-n-type GaAs substrate 85...n-type superlattice third layer 86...n-type superlattice first layer 87...I)-type superlattice second layer 88.../dove ZnS layer 89... ...N-type ohmic electrode 90...P-type ohmic electrode FIG. 6 shows a double heterojunction j in an embodiment of the present invention.
FIG. 1 is a structural diagram of a semiconductor light emitting device having an IL structure. 01-n-type GaAs substrate 92...n-type mixed crystal third layer 03...n-type superlattice first layer 04...■)-type superlattice second layer 95...non-doped ZnS layer 06...・N-type ohmic electrode 97...! )-type ohmic electrode FIG. 7 is a cross-sectional structural diagram of a double-hetero type semi-JO body laser made of ZnSTc-based material and constructed based on conventional knowledge. r) The first group consisting of R.Zn S x T e + -x, the third group consisting of 90-p type Zn5yTe, -Z
Layer + 3rd and above layers consisting of Zn5zTel-z of 00-n type Applicant: Seiko Epson Corporation Haya 11 Haya 3 concave 1 + Tayori Rita Showa February 24, 1962 1. ' Showing 3 items 1985 Patent Application No. 242585 2 Name of the invention Semiconductor light emitting device and its manufacturing method λ Person making the amendment 4, f Kyobashi 2-6-21 Procedural Amendment (Method) 1.4. Brief explanation of the drawings: ``Figures 5 (a) to (b) show a semiconductor light emitting device having a double heterojunction structure in an embodiment of the present invention. 5 (a) to (d) are diagrams showing the manufacturing process of a semiconductor light emitting device having a double heterojunction structure in an embodiment of the present invention." To do.

Claims (4)

[Claims] (1) ZnS_xTe_1_-_x layer (0≦X≦1) and ZnS_yTe_1_-_y layer (0≦y≦1, x≠y)
The first layer consists of a superlattice structure in which ZnS is laminated alternately.
, having a double heterojunction sandwiched between a P-type second layer having a larger band gap than the first layer made of ZnTe, and an n-type third layer having a larger band gap than the first layer made of ZnS and ZnTe. A semiconductor light emitting device characterized by: (2) P-type second layer is ZnS_zTe_1_-_z layer (0
≦z≦1) and ZnS_wTe_1_−_w layer (0≦w≦
1, Z≠w), or a P-type mixed crystal given by ZnS_uTe_1_-_u (0≦u≦1). semiconductor light emitting device. (3) The n-type third layer is a ZnS_vTe_1_-_v layer (
0≦v≦1) and ZnS_tTe_1_-_t layer (0≦t
≦1, v≠t), or an n-type mixed crystal given by ZnS_sTe_1_-_s (0≦s≦1). The semiconductor light emitting device described above. (4) A method for producing a semiconductor light emitting device, characterized in that an organic gold layer vapor phase decomposition method (MOVPE method) is used to produce a semiconductor light emitting device having a superlattice structure and a mixed crystal layer made of ZnS and ZnTe. .