JPS5779684A - Light emitting diode device - Google Patents

Light emitting diode device

Info

Publication number
JPS5779684A
JPS5779684A JP15543280A JP15543280A JPS5779684A JP S5779684 A JPS5779684 A JP S5779684A JP 15543280 A JP15543280 A JP 15543280A JP 15543280 A JP15543280 A JP 15543280A JP S5779684 A JPS5779684 A JP S5779684A
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting diode
type
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15543280A
Other languages
Japanese (ja)
Inventor
Takehiko Iwaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP15543280A priority Critical patent/JPS5779684A/en
Publication of JPS5779684A publication Critical patent/JPS5779684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To have no effect on luminous performance by environmental conditions such as the air conditions by a method wherein the P-N junction on a mesa side surface is coated with insulating materials. CONSTITUTION:A one conductivity type layer 2 having N type or P type conductivity is formed on a substrate 1 and a reverse conductivity type layer 3 having reverse conductivity against the layer 2 is formed on the layer 2. Furthermore, after forming electrode layers 6, 7 at the opposite surfaces, concave sections are formed by etching to make a light emitting diode in arrayed shape. Insulating materials 10 are filled in the concave sections provided by etching and a P-N junction formed between the layer 2 and the layer 3 is coated.
JP15543280A 1980-11-05 1980-11-05 Light emitting diode device Pending JPS5779684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15543280A JPS5779684A (en) 1980-11-05 1980-11-05 Light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15543280A JPS5779684A (en) 1980-11-05 1980-11-05 Light emitting diode device

Publications (1)

Publication Number Publication Date
JPS5779684A true JPS5779684A (en) 1982-05-18

Family

ID=15605885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15543280A Pending JPS5779684A (en) 1980-11-05 1980-11-05 Light emitting diode device

Country Status (1)

Country Link
JP (1) JPS5779684A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149463U (en) * 1984-09-03 1986-04-03
JPS61258483A (en) * 1985-05-11 1986-11-15 Oki Electric Ind Co Ltd semiconductor surface emitting device
JPS61276259A (en) * 1985-04-23 1986-12-06 アグフア・ゲヴエルト・ナ−ムロゼ・ベンノ−トチヤツプ Recording head for recording information in a line on the light receiving element
JPH01187838A (en) * 1988-01-22 1989-07-27 Hitachi Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149463U (en) * 1984-09-03 1986-04-03
JPS61276259A (en) * 1985-04-23 1986-12-06 アグフア・ゲヴエルト・ナ−ムロゼ・ベンノ−トチヤツプ Recording head for recording information in a line on the light receiving element
US4777516A (en) * 1985-04-23 1988-10-11 Agfa-Gevaert, N.V. Monolithic integration of light emitting elements and driver electronics
JPS61258483A (en) * 1985-05-11 1986-11-15 Oki Electric Ind Co Ltd semiconductor surface emitting device
JPH01187838A (en) * 1988-01-22 1989-07-27 Hitachi Ltd Semiconductor device

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