JPS56162896A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56162896A
JPS56162896A JP6698580A JP6698580A JPS56162896A JP S56162896 A JPS56162896 A JP S56162896A JP 6698580 A JP6698580 A JP 6698580A JP 6698580 A JP6698580 A JP 6698580A JP S56162896 A JPS56162896 A JP S56162896A
Authority
JP
Japan
Prior art keywords
layer
layers
conductive
ohmic contact
secure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6698580A
Other languages
Japanese (ja)
Inventor
Kenichiro Takahei
Haruo Nagai
Etsuo Noguchi
Yoshinori Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6698580A priority Critical patent/JPS56162896A/en
Publication of JPS56162896A publication Critical patent/JPS56162896A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

PURPOSE:To simplify the manufacture of a semiconductor device such as a buried laser in which a conductive layer is ohmically attached to the laminated different conductive type semiconductor layers by forming different materials of the conductive layers for both conductive layers in the semiconductor device. CONSTITUTION:A conductive layer 19 made of Au-Zn alloy or the like is formed by deposition with secure and preferable ohmic contact between the semiconductor layers 11 of a laminated 12 on a laminate 18 laminated on a semi-insulating substrate 1. Then, conductive layers 21, 28, 29 made of Au-Ge-Ni alloy or the like is formed with secure and preferable ohmic contact between the semiconductor layers 2 of the laminate 18. Subsequently, it is heat treated to obtain secure and preferable ohmic contact for the layer 2 of the layer 29, the layer 28 is formed on the layer 21, thereby obtaining secure and preferable ohmic contact between the layers.
JP6698580A 1980-05-20 1980-05-20 Manufacture of semiconductor device Pending JPS56162896A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6698580A JPS56162896A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6698580A JPS56162896A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56162896A true JPS56162896A (en) 1981-12-15

Family

ID=13331811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6698580A Pending JPS56162896A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162896A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213491A (en) * 1982-06-07 1983-12-12 Omron Tateisi Electronics Co Semiconductor laser
US5346854A (en) * 1991-11-07 1994-09-13 Goldstar Co., Ltd. Method of making a semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213491A (en) * 1982-06-07 1983-12-12 Omron Tateisi Electronics Co Semiconductor laser
US5346854A (en) * 1991-11-07 1994-09-13 Goldstar Co., Ltd. Method of making a semiconductor laser
US5570385A (en) * 1991-11-07 1996-10-29 Goldstar Co., Ltd. Semiconductor laser and method for manufacturing the same

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