JPS5796548A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5796548A
JPS5796548A JP17293080A JP17293080A JPS5796548A JP S5796548 A JPS5796548 A JP S5796548A JP 17293080 A JP17293080 A JP 17293080A JP 17293080 A JP17293080 A JP 17293080A JP S5796548 A JPS5796548 A JP S5796548A
Authority
JP
Japan
Prior art keywords
poly
layer
insulating film
contact hole
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17293080A
Other languages
Japanese (ja)
Other versions
JPH028462B2 (en
Inventor
Toshimoto Kodaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17293080A priority Critical patent/JPS5796548A/en
Publication of JPS5796548A publication Critical patent/JPS5796548A/en
Publication of JPH028462B2 publication Critical patent/JPH028462B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the integrity by a method wherein the first poly-Si layer and the second poly-Si layer which are seperated by a layer insulating film are directly contacted with each other through a contact hole. CONSTITUTION:The first poly Si wiring layer 12 is formed on a semiconductor substrate 10 with an insulating film 11 inbetween. Then a contact hole 16 is provided to a layer insulating film 13 formed on the first poly si layer 12 and on the film 13 the second poly Si wiring layer 14 is formed and makes contact with the first poly Si12 through the contact hole 16 and a protective insulating film 15 is formed on the second poly Si14. With the above configuration, an excessive space in multi-layer wiring composition is eliminated, so that the integrity is improved.
JP17293080A 1980-12-08 1980-12-08 Semiconductor device Granted JPS5796548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17293080A JPS5796548A (en) 1980-12-08 1980-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17293080A JPS5796548A (en) 1980-12-08 1980-12-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5796548A true JPS5796548A (en) 1982-06-15
JPH028462B2 JPH028462B2 (en) 1990-02-23

Family

ID=15950982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17293080A Granted JPS5796548A (en) 1980-12-08 1980-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796548A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153594A (en) * 1995-09-29 1997-06-10 Nec Corp Semiconductor device and its manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504674U (en) * 1973-05-15 1975-01-18
JPS5132378U (en) * 1974-09-02 1976-03-09
JPS51134085A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504674U (en) * 1973-05-15 1975-01-18
JPS5132378U (en) * 1974-09-02 1976-03-09
JPS51134085A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153594A (en) * 1995-09-29 1997-06-10 Nec Corp Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH028462B2 (en) 1990-02-23

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