JPS5258491A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5258491A
JPS5258491A JP13409575A JP13409575A JPS5258491A JP S5258491 A JPS5258491 A JP S5258491A JP 13409575 A JP13409575 A JP 13409575A JP 13409575 A JP13409575 A JP 13409575A JP S5258491 A JPS5258491 A JP S5258491A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layers
layer
semiconductor device
electrode wiring
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13409575A
Inventor
Tatsu Ito
Akira Suzuki
Eiichi Yamada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To permit the appearance inspection of the electrode wiring of first layer even after the electrode wiring layer of second layer has been formed, by incorporating transparent or transluscent layers in at least two or more layers in composing multilayer conductive layers on a semiconductor substrate formed with element regions.
COPYRIGHT: (C)1977,JPO&Japio
JP13409575A 1975-11-10 1975-11-10 Semiconductor device Pending JPS5258491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13409575A JPS5258491A (en) 1975-11-10 1975-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13409575A JPS5258491A (en) 1975-11-10 1975-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5258491A true true JPS5258491A (en) 1977-05-13

Family

ID=15120306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13409575A Pending JPS5258491A (en) 1975-11-10 1975-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5258491A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5720452A (en) * 1980-07-11 1982-02-02 Matsushita Electric Ind Co Ltd Forming method for multilayer wiring
JPS5931041A (en) * 1982-08-13 1984-02-18 Seiko Epson Corp Thin film semiconductor device
US4733289A (en) * 1980-04-25 1988-03-22 Hitachi, Ltd. Resin-molded semiconductor device using polyimide and nitride films for the passivation film
US4796084A (en) * 1985-05-13 1989-01-03 Kabushiki Kaisha Toshiba Semiconductor device having high resistance to electrostatic and electromagnetic induction using a complementary shield pattern
US5432357A (en) * 1992-04-16 1995-07-11 Kabushiki Kaisha Kobe Seiko Sho Diamond film electronic devices
US5659201A (en) * 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733289A (en) * 1980-04-25 1988-03-22 Hitachi, Ltd. Resin-molded semiconductor device using polyimide and nitride films for the passivation film
JPS5720452A (en) * 1980-07-11 1982-02-02 Matsushita Electric Ind Co Ltd Forming method for multilayer wiring
JPS5931041A (en) * 1982-08-13 1984-02-18 Seiko Epson Corp Thin film semiconductor device
US4796084A (en) * 1985-05-13 1989-01-03 Kabushiki Kaisha Toshiba Semiconductor device having high resistance to electrostatic and electromagnetic induction using a complementary shield pattern
US5432357A (en) * 1992-04-16 1995-07-11 Kabushiki Kaisha Kobe Seiko Sho Diamond film electronic devices
US5659201A (en) * 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line

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