JPS5717189A - Semiconductor light-emitting element - Google Patents

Semiconductor light-emitting element

Info

Publication number
JPS5717189A
JPS5717189A JP9163180A JP9163180A JPS5717189A JP S5717189 A JPS5717189 A JP S5717189A JP 9163180 A JP9163180 A JP 9163180A JP 9163180 A JP9163180 A JP 9163180A JP S5717189 A JPS5717189 A JP S5717189A
Authority
JP
Japan
Prior art keywords
emitting element
semiconductor light
growth layer
grown
couple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9163180A
Other languages
Japanese (ja)
Inventor
Osamu Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9163180A priority Critical patent/JPS5717189A/en
Publication of JPS5717189A publication Critical patent/JPS5717189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor light-emitting element with multiple wavelengths, which is easy to couple with one fiber, by forming a P-N junction in two or more depth, which are parallel with the surface of a primary crystal, of one epitaxial growth layer, an energy gap thereof changes monotonously. CONSTITUTION:The P-N junction is shaped in two or more depth, which are parallel with the surface of the primary crystal, of one epitaxial growth layer, the energy gap thereof changes monotonously. N-GaAlAs 1 is grown on a substrate in an epitaxial shape, and the substrate is etched and the half of the growth layer 1 up to the surface d1. The P-GaAlAs layer 2 is grown on the surfaces d1, d2. Accordingly, the semiconductor light-emitting element with multiple wavelengths, which is easy to couple with one fiber, can be obtained.
JP9163180A 1980-07-07 1980-07-07 Semiconductor light-emitting element Pending JPS5717189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9163180A JPS5717189A (en) 1980-07-07 1980-07-07 Semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9163180A JPS5717189A (en) 1980-07-07 1980-07-07 Semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS5717189A true JPS5717189A (en) 1982-01-28

Family

ID=14031887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9163180A Pending JPS5717189A (en) 1980-07-07 1980-07-07 Semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS5717189A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073297A1 (en) * 2012-11-08 2014-05-15 株式会社ブイ・テクノロジー Optical interconnection device
JP2017092076A (en) * 2015-11-02 2017-05-25 株式会社ソディック Light emitting element
KR20220047648A (en) 2019-09-24 2022-04-18 헤이신 엘티디. single shaft eccentric screw pump

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448187A (en) * 1977-09-21 1979-04-16 Ibm Method of producing light emitting diode array
JPS54123884A (en) * 1978-03-17 1979-09-26 Hitachi Ltd Light emission diode of multi-color and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448187A (en) * 1977-09-21 1979-04-16 Ibm Method of producing light emitting diode array
JPS54123884A (en) * 1978-03-17 1979-09-26 Hitachi Ltd Light emission diode of multi-color and its manufacture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073297A1 (en) * 2012-11-08 2014-05-15 株式会社ブイ・テクノロジー Optical interconnection device
JP2014096684A (en) * 2012-11-08 2014-05-22 V Technology Co Ltd Optical inter-connection device
JP2017092076A (en) * 2015-11-02 2017-05-25 株式会社ソディック Light emitting element
KR20220047648A (en) 2019-09-24 2022-04-18 헤이신 엘티디. single shaft eccentric screw pump
DE112020004501T5 (en) 2019-09-24 2022-06-09 Heishin Ltd. SINGLE AXIS PROGRESSIVE SCREW PUMP

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