JPS5598823A - Manufacture of single crystal element - Google Patents

Manufacture of single crystal element

Info

Publication number
JPS5598823A
JPS5598823A JP582179A JP582179A JPS5598823A JP S5598823 A JPS5598823 A JP S5598823A JP 582179 A JP582179 A JP 582179A JP 582179 A JP582179 A JP 582179A JP S5598823 A JPS5598823 A JP S5598823A
Authority
JP
Japan
Prior art keywords
layer
single crystal
substrate
main face
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP582179A
Other languages
Japanese (ja)
Inventor
Kazuhiko Ihaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP582179A priority Critical patent/JPS5598823A/en
Publication of JPS5598823A publication Critical patent/JPS5598823A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain an epitaxial layer in which there are little strain and dislocation and no exfoliation occurs, by previously providing a linear polycrystalline or amorphous layer on a single crystal substrate correspondingly to cutting-off lines when epitaxially growing different kinds of single crystal layers on the substrate, which is cut off afterward to manufacture numerous devices.
CONSTITUTION: To obtain numerous light emitting diodes, a polycrystalline layer 3 or an amorphous layer 4 is firstly made of SiO2 by gas-phase pyrolysis with SiH4 and CO2 gas on one main face 2 of an n+-type Si substrate 1. The layer 3 or 4 is selectively etched by NH4F.HF group etching agent so that the layer is left as a lattice pattern corresponding to cutting-off lines. An n-type GaP single crystal layer different in kind from the former layer is so epitaxially grown on the main face 2 including the pattern that a single crystal layer 5 is provided on the exposed main face 2 and a polycrystalline layer 6 is provided on the lattice pattern. A prescribed region is produced in the layer 5. The substrate and the layers are cut off along the layer 6.
COPYRIGHT: (C)1980,JPO&Japio
JP582179A 1979-01-20 1979-01-20 Manufacture of single crystal element Pending JPS5598823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP582179A JPS5598823A (en) 1979-01-20 1979-01-20 Manufacture of single crystal element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP582179A JPS5598823A (en) 1979-01-20 1979-01-20 Manufacture of single crystal element

Publications (1)

Publication Number Publication Date
JPS5598823A true JPS5598823A (en) 1980-07-28

Family

ID=11621734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP582179A Pending JPS5598823A (en) 1979-01-20 1979-01-20 Manufacture of single crystal element

Country Status (1)

Country Link
JP (1) JPS5598823A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769785A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
US4925810A (en) * 1986-10-25 1990-05-15 Kabushiki Kaisha Toyota Chuo Kenkyusho Compound semiconductor device and a method of manufacturing the same
US5108947A (en) * 1989-01-31 1992-04-28 Agfa-Gevaert N.V. Integration of gaas on si substrates
JP2000277863A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Semiconductor light emitting element and manufacturing method therefor
JP2007251220A (en) * 2003-02-07 2007-09-27 Sanyo Electric Co Ltd Semiconductor element and manufacturing method thereof
JP2008263228A (en) * 2008-07-08 2008-10-30 Sharp Corp Semiconductor light emitting element, and method of manufacturing the same
JP2012039138A (en) * 2011-10-06 2012-02-23 Sharp Corp Semiconductor light-emitting element manufacturing method
JP2015503215A (en) * 2011-10-26 2015-01-29 アンヴィル セミコンダクターズ リミテッド Silicon carbide epitaxial growth method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769785A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
US4925810A (en) * 1986-10-25 1990-05-15 Kabushiki Kaisha Toyota Chuo Kenkyusho Compound semiconductor device and a method of manufacturing the same
US5108947A (en) * 1989-01-31 1992-04-28 Agfa-Gevaert N.V. Integration of gaas on si substrates
JP2000277863A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Semiconductor light emitting element and manufacturing method therefor
JP2007251220A (en) * 2003-02-07 2007-09-27 Sanyo Electric Co Ltd Semiconductor element and manufacturing method thereof
JP2008263228A (en) * 2008-07-08 2008-10-30 Sharp Corp Semiconductor light emitting element, and method of manufacturing the same
JP2012039138A (en) * 2011-10-06 2012-02-23 Sharp Corp Semiconductor light-emitting element manufacturing method
JP2015503215A (en) * 2011-10-26 2015-01-29 アンヴィル セミコンダクターズ リミテッド Silicon carbide epitaxial growth method
US9520285B2 (en) 2011-10-26 2016-12-13 Anvil Semiconductors Limited Silicon carbide epitaxy

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