JPS5499577A - Semiconductor assembly - Google Patents
Semiconductor assemblyInfo
- Publication number
- JPS5499577A JPS5499577A JP218479A JP218479A JPS5499577A JP S5499577 A JPS5499577 A JP S5499577A JP 218479 A JP218479 A JP 218479A JP 218479 A JP218479 A JP 218479A JP S5499577 A JPS5499577 A JP S5499577A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sio
- region
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a semiconductor assembly containing plural split regions with the flat surface by growing the epitaxial layer on the semiconductor substrate containing the buried region, providing the concave part reaching the buried region to the epitaxial layer and filling the concavity with the poly-crystal Si wiring layer via the insulating film.
CONSTITUTION: SiO2 film 2 is coated on N-type Si substrate 1, and part of film 2 is removed to form through diffusion P-type region 3 which is to be the buried region. Then film 2 is removed along with the SiO2 film grown at the formation time of region 3 through etching, and N-type layer 8 is epitaxial-grown on the entire surface. After this, the entire surface is covered with SiO2 film 4 to form concave part 7 reaching region 3 through selective etching. In this case, the surface of substrate 1 is selected to (100) face, so side surface 10 of a sharp angle can be obtained. Then concave SiO2 film 6 is formed from side surface 10 through the bottom surface, and poly-crystal Si layer 5 containing the impurity is vapor-grown on the entire surface. The surface of layer 5 is removed through polishing or etching to make remain Si layer 5 to be the wiring layer later only within part 7.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP218479A JPS5499577A (en) | 1979-01-16 | 1979-01-16 | Semiconductor assembly |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP218479A JPS5499577A (en) | 1979-01-16 | 1979-01-16 | Semiconductor assembly |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46002823 Division |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5499577A true JPS5499577A (en) | 1979-08-06 |
Family
ID=11522270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP218479A Pending JPS5499577A (en) | 1979-01-16 | 1979-01-16 | Semiconductor assembly |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5499577A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889864A (en) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | Insulated gate type semiconductor device |
JP2010141310A (en) * | 2008-11-12 | 2010-06-24 | Fuji Electric Holdings Co Ltd | Semiconductor device and method of manufacturing the same |
-
1979
- 1979-01-16 JP JP218479A patent/JPS5499577A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889864A (en) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | Insulated gate type semiconductor device |
JPH0427711B2 (en) * | 1981-11-24 | 1992-05-12 | Hitachi Ltd | |
JP2010141310A (en) * | 2008-11-12 | 2010-06-24 | Fuji Electric Holdings Co Ltd | Semiconductor device and method of manufacturing the same |
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