JPS5499577A - Semiconductor assembly - Google Patents

Semiconductor assembly

Info

Publication number
JPS5499577A
JPS5499577A JP218479A JP218479A JPS5499577A JP S5499577 A JPS5499577 A JP S5499577A JP 218479 A JP218479 A JP 218479A JP 218479 A JP218479 A JP 218479A JP S5499577 A JPS5499577 A JP S5499577A
Authority
JP
Japan
Prior art keywords
film
layer
sio
region
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP218479A
Other languages
Japanese (ja)
Inventor
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP218479A priority Critical patent/JPS5499577A/en
Publication of JPS5499577A publication Critical patent/JPS5499577A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a semiconductor assembly containing plural split regions with the flat surface by growing the epitaxial layer on the semiconductor substrate containing the buried region, providing the concave part reaching the buried region to the epitaxial layer and filling the concavity with the poly-crystal Si wiring layer via the insulating film.
CONSTITUTION: SiO2 film 2 is coated on N-type Si substrate 1, and part of film 2 is removed to form through diffusion P-type region 3 which is to be the buried region. Then film 2 is removed along with the SiO2 film grown at the formation time of region 3 through etching, and N-type layer 8 is epitaxial-grown on the entire surface. After this, the entire surface is covered with SiO2 film 4 to form concave part 7 reaching region 3 through selective etching. In this case, the surface of substrate 1 is selected to (100) face, so side surface 10 of a sharp angle can be obtained. Then concave SiO2 film 6 is formed from side surface 10 through the bottom surface, and poly-crystal Si layer 5 containing the impurity is vapor-grown on the entire surface. The surface of layer 5 is removed through polishing or etching to make remain Si layer 5 to be the wiring layer later only within part 7.
COPYRIGHT: (C)1979,JPO&Japio
JP218479A 1979-01-16 1979-01-16 Semiconductor assembly Pending JPS5499577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP218479A JPS5499577A (en) 1979-01-16 1979-01-16 Semiconductor assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP218479A JPS5499577A (en) 1979-01-16 1979-01-16 Semiconductor assembly

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP46002823 Division

Publications (1)

Publication Number Publication Date
JPS5499577A true JPS5499577A (en) 1979-08-06

Family

ID=11522270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP218479A Pending JPS5499577A (en) 1979-01-16 1979-01-16 Semiconductor assembly

Country Status (1)

Country Link
JP (1) JPS5499577A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889864A (en) * 1981-11-24 1983-05-28 Hitachi Ltd Insulated gate type semiconductor device
JP2010141310A (en) * 2008-11-12 2010-06-24 Fuji Electric Holdings Co Ltd Semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889864A (en) * 1981-11-24 1983-05-28 Hitachi Ltd Insulated gate type semiconductor device
JPH0427711B2 (en) * 1981-11-24 1992-05-12 Hitachi Ltd
JP2010141310A (en) * 2008-11-12 2010-06-24 Fuji Electric Holdings Co Ltd Semiconductor device and method of manufacturing the same

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