JPS5782712A - Voltage value display element - Google Patents

Voltage value display element

Info

Publication number
JPS5782712A
JPS5782712A JP15765980A JP15765980A JPS5782712A JP S5782712 A JPS5782712 A JP S5782712A JP 15765980 A JP15765980 A JP 15765980A JP 15765980 A JP15765980 A JP 15765980A JP S5782712 A JPS5782712 A JP S5782712A
Authority
JP
Japan
Prior art keywords
voltage
display element
junction
small
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15765980A
Other languages
Japanese (ja)
Inventor
Hiroshi Takano
Masaaki Sakuta
Michihiko Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15765980A priority Critical patent/JPS5782712A/en
Publication of JPS5782712A publication Critical patent/JPS5782712A/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

PURPOSE: To obtain a small-sized voltage display element whose operating method is simple, by applying the p-n junction of a semiconductor light emitting element with a forward voltage, and then forming a light emission area which expands linearly corresponding the variation of the applied voltage.
CONSTITUTION: A voltage display element consists of metallic electrodes 1 and 2, a p-GaAs layer 3, an n-GaAs layer 4, a p-n junction 5, and an infrared/visible conversion fluorescent material layer 6. When a voltage V to be measured is applied between metallic electrodes 1 and 2, the diffusion length of a small number of carriers in the p type layer varies in a direction (x) corresponding to the level of the forward voltage applied to the p-n junction 5, and a recombination light emission area varies corresponding to the level variation of the voltage. Light emitted by recombination whose center is 9,400Å in wavelength is converted into visible light through the infrared/visible conversion fluorescent material layer 6. Consequently, a small-sized voltage display element whose operating method is simple is obtained.
COPYRIGHT: (C)1982,JPO&Japio
JP15765980A 1980-11-11 1980-11-11 Voltage value display element Pending JPS5782712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15765980A JPS5782712A (en) 1980-11-11 1980-11-11 Voltage value display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15765980A JPS5782712A (en) 1980-11-11 1980-11-11 Voltage value display element

Publications (1)

Publication Number Publication Date
JPS5782712A true JPS5782712A (en) 1982-05-24

Family

ID=15654557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15765980A Pending JPS5782712A (en) 1980-11-11 1980-11-11 Voltage value display element

Country Status (1)

Country Link
JP (1) JPS5782712A (en)

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