JPS56133882A - Semiconductor optical detector - Google Patents

Semiconductor optical detector

Info

Publication number
JPS56133882A
JPS56133882A JP3794180A JP3794180A JPS56133882A JP S56133882 A JPS56133882 A JP S56133882A JP 3794180 A JP3794180 A JP 3794180A JP 3794180 A JP3794180 A JP 3794180A JP S56133882 A JPS56133882 A JP S56133882A
Authority
JP
Japan
Prior art keywords
diffused
layer
layers
conductivity type
optical detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3794180A
Other languages
Japanese (ja)
Inventor
Yoshimichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3794180A priority Critical patent/JPS56133882A/en
Publication of JPS56133882A publication Critical patent/JPS56133882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce crosstalk by providing in a multilayer semiconductor substrate with the first conductivity type, a plurality of semiconductor regions with the second conductivity type piled one upon another being connected to each other through only a portion thereof. CONSTITUTION:P type impurity is diffused into a silicon substrate 1 to form a diffused layer 8 with the opposite conductivity type. Then, an epitaxial layer 9 is formed, and therein, a diffused layer 10 is formed so as to overlap with the regions 8 through only a portion thereof. Similarly, an epitaxial layer 11 is formed, and therein, a diffused layer 12 is formed. Then, epitaxial layers and diffused layers are successively formed, and only the portions where the layers 8, 10, 12... overlap with each other are allowed to conduct.
JP3794180A 1980-03-24 1980-03-24 Semiconductor optical detector Pending JPS56133882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3794180A JPS56133882A (en) 1980-03-24 1980-03-24 Semiconductor optical detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3794180A JPS56133882A (en) 1980-03-24 1980-03-24 Semiconductor optical detector

Publications (1)

Publication Number Publication Date
JPS56133882A true JPS56133882A (en) 1981-10-20

Family

ID=12511573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3794180A Pending JPS56133882A (en) 1980-03-24 1980-03-24 Semiconductor optical detector

Country Status (1)

Country Link
JP (1) JPS56133882A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212158A (en) * 1985-07-09 1987-01-21 Matsushita Electric Ind Co Ltd Solid-state image pickup device
WO2008029161A2 (en) * 2006-09-08 2008-03-13 Imperial College Innovations Limited Photovoltaic devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212158A (en) * 1985-07-09 1987-01-21 Matsushita Electric Ind Co Ltd Solid-state image pickup device
WO2008029161A2 (en) * 2006-09-08 2008-03-13 Imperial College Innovations Limited Photovoltaic devices
WO2008029161A3 (en) * 2006-09-08 2008-10-09 Imp College Innovations Ltd Photovoltaic devices

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