JPS53108783A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53108783A
JPS53108783A JP2357177A JP2357177A JPS53108783A JP S53108783 A JPS53108783 A JP S53108783A JP 2357177 A JP2357177 A JP 2357177A JP 2357177 A JP2357177 A JP 2357177A JP S53108783 A JPS53108783 A JP S53108783A
Authority
JP
Japan
Prior art keywords
layer
production
semiconductor device
forming
diffused layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2357177A
Other languages
Japanese (ja)
Inventor
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2357177A priority Critical patent/JPS53108783A/en
Publication of JPS53108783A publication Critical patent/JPS53108783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To make possible parallel provision of both high-speed and high-dielectric strength elements within the same chip by forming a first impurity diffused layer from a first semiconductor layer surface down to the substrate, covering said layer with a second semiconductor layer, and providing element isolating regions in the second step process of forming a second impurity diffused layer from the surface thereof down to the first diffused layer.
JP2357177A 1977-03-04 1977-03-04 Production of semiconductor device Pending JPS53108783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2357177A JPS53108783A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2357177A JPS53108783A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53108783A true JPS53108783A (en) 1978-09-21

Family

ID=12114217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2357177A Pending JPS53108783A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108783A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Similar Documents

Publication Publication Date Title
JPS543479A (en) Semiconductor device and its manufacture
JPS5374385A (en) Manufacture of field effect semiconductor device
DE2860161D1 (en) Method of forming very small impurity regions in a semiconductor substrate
JPS5324277A (en) Semiconductor devic e and its production
JPS5350686A (en) Production of semiconductor integrated circuit
JPS53108783A (en) Production of semiconductor device
JPS53124087A (en) Manufacture of semiconductor device
JPS5283070A (en) Production of semiconductor device
JPS53115173A (en) Production of semiconductor device
JPS5328384A (en) Production method of semiconductor device
JPS5379378A (en) Semoconductor davice and its production
JPS5228879A (en) Semiconductor device and method for its production
JPS56126971A (en) Thin film field effect element
JPS53147487A (en) Semiconductor device
JPS56133882A (en) Semiconductor optical detector
JPS51111089A (en) Semiconductor device manufucturing process
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate
JPS5339087A (en) Integrated circuit
JPS5253680A (en) Semiconductor device
JPS57109368A (en) Semiconductor memory device
JPS5317286A (en) Production of semiconductor device
JPS53129982A (en) Production of mos type semiconductor devices
JPS5376772A (en) Semiconductor device
JPS5362988A (en) Complementary type mos semiconductor