JPS55154765A - Semiconductor pellet - Google Patents

Semiconductor pellet

Info

Publication number
JPS55154765A
JPS55154765A JP6300479A JP6300479A JPS55154765A JP S55154765 A JPS55154765 A JP S55154765A JP 6300479 A JP6300479 A JP 6300479A JP 6300479 A JP6300479 A JP 6300479A JP S55154765 A JPS55154765 A JP S55154765A
Authority
JP
Japan
Prior art keywords
region
regions
type
diffused
isolating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6300479A
Other languages
Japanese (ja)
Inventor
Hirosuke Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6300479A priority Critical patent/JPS55154765A/en
Publication of JPS55154765A publication Critical patent/JPS55154765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To provide a bidirectional photo couple thyristor adapted for a photo drive switch or the like by forming two thyristors of pnpn and npnp four layers in one semiconductor substrate while isolating them with isolating bands having a width larger than 0.05mm. formed in high specific resistance n-type base region. CONSTITUTION:A high specific resistance n-type base region N2 is diffused and formed in an n-type semiconductor substrate 1, and p-type regions P1, P2 diffused and formed in the substrate 1 while surrounding both the side surfaces and the bottom surface. Then, a region P1 is passed through the center on the back surface of the substrate 1, an isolating band having a width of larger than 0.05mm. is formed into the region N2, a glass layer 6 is coated on the wall surface, and n-type region N1 is diffused and formed on the back surface of the region P2. Thereafter, a p-type region P3 is formed in one region N2 at both sides of the isolation band, and an n- type region N3 is formed therein to form one thyristor with the regions P1N2P3N4, and to similarly form another thyristor with the regions N1P2N2P4. In this manner, the regions N3 and P4 are connected, and the regions P1 and N1 are connected, an LED is employed on the surface, and a light is irradiated thereto.
JP6300479A 1979-05-22 1979-05-22 Semiconductor pellet Pending JPS55154765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6300479A JPS55154765A (en) 1979-05-22 1979-05-22 Semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6300479A JPS55154765A (en) 1979-05-22 1979-05-22 Semiconductor pellet

Publications (1)

Publication Number Publication Date
JPS55154765A true JPS55154765A (en) 1980-12-02

Family

ID=13216733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6300479A Pending JPS55154765A (en) 1979-05-22 1979-05-22 Semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS55154765A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186365A (en) * 1981-05-13 1982-11-16 Nec Corp Photosensitive semiconductor device
JPS58116768A (en) * 1981-12-29 1983-07-12 Sanken Electric Co Ltd Bidirectional photothyristor
JPS63253665A (en) * 1987-04-09 1988-10-20 Mitsubishi Electric Corp Semiconductor device
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac
US4939565A (en) * 1987-04-09 1990-07-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186365A (en) * 1981-05-13 1982-11-16 Nec Corp Photosensitive semiconductor device
JPS58116768A (en) * 1981-12-29 1983-07-12 Sanken Electric Co Ltd Bidirectional photothyristor
JPS63253665A (en) * 1987-04-09 1988-10-20 Mitsubishi Electric Corp Semiconductor device
US4939565A (en) * 1987-04-09 1990-07-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac

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