JPS54146681A - Photo-detector - Google Patents
Photo-detectorInfo
- Publication number
- JPS54146681A JPS54146681A JP5442278A JP5442278A JPS54146681A JP S54146681 A JPS54146681 A JP S54146681A JP 5442278 A JP5442278 A JP 5442278A JP 5442278 A JP5442278 A JP 5442278A JP S54146681 A JPS54146681 A JP S54146681A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- concentration
- zones
- conductive type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To provide a photo-detector wherein between one-conductive type semiconductor zones a high-concentration zone of an opposite conductive type is separately provided, and between said zone and a one-conductive type zone there is provided a low-concentration zone of a same-conductive type, whereby it is possible to make the separation band between photosensers less than several tens mum. CONSTITUTION:A low-concentration n<->-Si layer of high resistance and same conductive type is provided on a high-concentration n<+> type Si base plate 21, and high- concentration P<+> type zones 23 and 24 are separately provided on the inner surface of said layer 22. In this manner, photosenser elements 25 and 26 each having a P-P-n<+> structure are formed. A high-concentration n<+> zone 27 is formed relatively deeply on the inner surfaces 22 of elements 25 and 26 separately from the zones 23 and 24 and low-concentration P<-> zones 28 and 29 are formed relatively shallowly across said zone 27 and zones 23 and 24. A SiO2 layer 3Q, and further a SiO2 layer 31 are provided as reflection layers so as to cover the zone 27 on the layer 22 to constitute a p-n<->n<+> type photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53054422A JPS6042897B2 (en) | 1978-05-10 | 1978-05-10 | photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53054422A JPS6042897B2 (en) | 1978-05-10 | 1978-05-10 | photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54146681A true JPS54146681A (en) | 1979-11-16 |
| JPS6042897B2 JPS6042897B2 (en) | 1985-09-25 |
Family
ID=12970265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53054422A Expired JPS6042897B2 (en) | 1978-05-10 | 1978-05-10 | photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042897B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251066A (en) * | 1985-04-30 | 1986-11-08 | Canon Inc | Photoelectric converting device |
| JPH0316273A (en) * | 1989-06-14 | 1991-01-24 | Fuji Electric Co Ltd | Photosensor |
| JPH03241877A (en) * | 1990-02-20 | 1991-10-29 | Matsushita Electron Corp | Optical semiconductor device |
| US5861655A (en) * | 1996-01-22 | 1999-01-19 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image reading apparatus with good crosstalk characteristics |
| WO2009018872A1 (en) * | 2007-08-06 | 2009-02-12 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche photodiode |
-
1978
- 1978-05-10 JP JP53054422A patent/JPS6042897B2/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251066A (en) * | 1985-04-30 | 1986-11-08 | Canon Inc | Photoelectric converting device |
| JPH0316273A (en) * | 1989-06-14 | 1991-01-24 | Fuji Electric Co Ltd | Photosensor |
| JPH03241877A (en) * | 1990-02-20 | 1991-10-29 | Matsushita Electron Corp | Optical semiconductor device |
| US5861655A (en) * | 1996-01-22 | 1999-01-19 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image reading apparatus with good crosstalk characteristics |
| WO2009018872A1 (en) * | 2007-08-06 | 2009-02-12 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche photodiode |
| US8258594B2 (en) | 2007-08-06 | 2012-09-04 | Pnsensor Gmbh | Avalanche photodiode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6042897B2 (en) | 1985-09-25 |
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