JPS5688361A - Static induction type reverse conductivity thyristor - Google Patents

Static induction type reverse conductivity thyristor

Info

Publication number
JPS5688361A
JPS5688361A JP16618279A JP16618279A JPS5688361A JP S5688361 A JPS5688361 A JP S5688361A JP 16618279 A JP16618279 A JP 16618279A JP 16618279 A JP16618279 A JP 16618279A JP S5688361 A JPS5688361 A JP S5688361A
Authority
JP
Japan
Prior art keywords
region
type
thyristor
substrate
static induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16618279A
Other languages
Japanese (ja)
Other versions
JPS6050067B2 (en
Inventor
Osamu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP16618279A priority Critical patent/JPS6050067B2/en
Publication of JPS5688361A publication Critical patent/JPS5688361A/en
Publication of JPS6050067B2 publication Critical patent/JPS6050067B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a static induction type reverse conductivity type thyristor having low ON voltage while simplifying the configuration by forming a diode for surrounding the thyristor in a semicouductor substrate when forming the thyristor on the substrate. CONSTITUTION:An n<+> type layer 11 is formed on the back surface of n type or i type Si substrate 10, a p<+> type region 12 is diffused therein, an n<+> type region 13 is formed on the surface of the substrate 10, and a ring-shaped p<+> type region 14 is diffused in the region confronting the region 12 and surrounding it. Similarly, a ring-shaped p<+> type region 15 is formed without confronting the region 12 at the peripheral edge of the surface of the substrate 10, the regions 15, 13 are connected, a common terminal 2' is mounted thereon, a control terminal 3' is mounted on the region 14, and a common terminal 1' is mounted on the region 12 with the layer 11. Thus, a diode region 31 having p<+>-n(i)-n<+> architecture is formed from the surface, and thyristor 33 having p<+>-n<+>-n(i)-n<+> and p<+> architectures is formed from the back surface through the isolation band 32.
JP16618279A 1979-12-20 1979-12-20 Electrostatic induction type reverse conducting thyristor Expired JPS6050067B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16618279A JPS6050067B2 (en) 1979-12-20 1979-12-20 Electrostatic induction type reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16618279A JPS6050067B2 (en) 1979-12-20 1979-12-20 Electrostatic induction type reverse conducting thyristor

Publications (2)

Publication Number Publication Date
JPS5688361A true JPS5688361A (en) 1981-07-17
JPS6050067B2 JPS6050067B2 (en) 1985-11-06

Family

ID=15826588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16618279A Expired JPS6050067B2 (en) 1979-12-20 1979-12-20 Electrostatic induction type reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS6050067B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276769A (en) * 1985-09-30 1987-04-08 Toyota Central Res & Dev Lab Inc Static induction type thyristor
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276769A (en) * 1985-09-30 1987-04-08 Toyota Central Res & Dev Lab Inc Static induction type thyristor
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region

Also Published As

Publication number Publication date
JPS6050067B2 (en) 1985-11-06

Similar Documents

Publication Publication Date Title
FR2435127B1 (en)
JPS54157092A (en) Semiconductor integrated circuit device
JPS51135373A (en) Semiconductor device
JPS5688361A (en) Static induction type reverse conductivity thyristor
JPS5297684A (en) Semiconductor element
JPS5533075A (en) Mesa semiconductor device
JPS5642367A (en) Manufacture of bipolar integrated circuit
JPS556847A (en) Semiconductor device
JPS57128953A (en) Manufacture of semiconductor integrated circuit
JPS54100675A (en) Three-terminal two-way thyristor
JPS54111287A (en) Resin seal planar-structure semiconductor element
JPS5660049A (en) Manufacture of semiconductor integrated circuit device
JPS5248986A (en) Semiconductor temperature sensitive switch element
JPS57111058A (en) Bipolar semiconductor integrated circuit device
JPS5613761A (en) Preparation of semiconductor device
JPS57157567A (en) Vertical type p-n-p transistor
JPS5289473A (en) Transistor
JPS55125678A (en) Zener diode
JPS5658260A (en) Darlington junction type transistor and production thereof
JPS57143859A (en) Semiconductor device
JPS5678127A (en) Manufacture of semiconductor device
JPS54149485A (en) Electrostatic induction transistor integrated circuit
JPS6466963A (en) Semiconductor integrated circuit
JPS57113285A (en) Semiconductor device
JPS5375778A (en) Field effect transistor having longitudinal constitution of surface wiring system