JPS57113285A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57113285A JPS57113285A JP18811480A JP18811480A JPS57113285A JP S57113285 A JPS57113285 A JP S57113285A JP 18811480 A JP18811480 A JP 18811480A JP 18811480 A JP18811480 A JP 18811480A JP S57113285 A JPS57113285 A JP S57113285A
- Authority
- JP
- Japan
- Prior art keywords
- multicrystal silicon
- type
- junction
- multicrystal
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052710 silicon Inorganic materials 0.000 abstract 10
- 239000010703 silicon Substances 0.000 abstract 10
- 230000000295 complement effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To permit PN junction to hold a great leakage current by forming a second multicrystal silicon in contact with a PN junction formed in a first multicrystal silicon in a complementary MOSLSI semiconductor device. CONSTITUTION:A second p type and N type multicrystal silicon 7 is connected to a PN junction consisting of a P type multicrystal silicon 3 and an N type multicrystal silicon 4 to make contact with it. In such a way, a PN junction area of the multicrystal silicon is equal to a multicrystal silicon section plus a vertical PN junction area comprising the second P type and N type multicrystal silicon 7, the multicrystal silicon 3 and the multicrystal silicon 4, and a leakage current on the PN junction is increase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18811480A JPS57113285A (en) | 1980-12-29 | 1980-12-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18811480A JPS57113285A (en) | 1980-12-29 | 1980-12-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57113285A true JPS57113285A (en) | 1982-07-14 |
Family
ID=16217942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18811480A Pending JPS57113285A (en) | 1980-12-29 | 1980-12-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57113285A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63293858A (en) * | 1987-05-26 | 1988-11-30 | Nec Corp | Manufacture of semiconductor device |
-
1980
- 1980-12-29 JP JP18811480A patent/JPS57113285A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63293858A (en) * | 1987-05-26 | 1988-11-30 | Nec Corp | Manufacture of semiconductor device |
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