JPS57188867A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57188867A
JPS57188867A JP7353281A JP7353281A JPS57188867A JP S57188867 A JPS57188867 A JP S57188867A JP 7353281 A JP7353281 A JP 7353281A JP 7353281 A JP7353281 A JP 7353281A JP S57188867 A JPS57188867 A JP S57188867A
Authority
JP
Japan
Prior art keywords
electrostatic breakdown
layer
output terminal
internal circuit
increasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7353281A
Other languages
Japanese (ja)
Inventor
Takashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7353281A priority Critical patent/JPS57188867A/en
Publication of JPS57188867A publication Critical patent/JPS57188867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase electrostatic breakdown strength without increasing an element area by a method wherein an electrostatic breakdown-proof element is arranged between an output terminal and an internal circuit and a common terminal combining the output terminal with the internal circuit is connected to the third semiconductor region only. CONSTITUTION:An electrostatic breakdown-proof element is formed in an epitaxial layer 4 fixed at constant electric potential and is composed of a P type diffusion layer 5 and an N type diffusion layer 6 formed in the layer 5. An electrode is provided with a contact in the layer 6 to commonly connect an output terminal A and internal circuit wiring B. In this way, electrostatic breakdown strength is remarkably improved without increasing an element area.
JP7353281A 1981-05-18 1981-05-18 Semiconductor device Pending JPS57188867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7353281A JPS57188867A (en) 1981-05-18 1981-05-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7353281A JPS57188867A (en) 1981-05-18 1981-05-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57188867A true JPS57188867A (en) 1982-11-19

Family

ID=13520929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7353281A Pending JPS57188867A (en) 1981-05-18 1981-05-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188867A (en)

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