JPS57176756A - Complementary mos integrated circuit device - Google Patents

Complementary mos integrated circuit device

Info

Publication number
JPS57176756A
JPS57176756A JP56062909A JP6290981A JPS57176756A JP S57176756 A JPS57176756 A JP S57176756A JP 56062909 A JP56062909 A JP 56062909A JP 6290981 A JP6290981 A JP 6290981A JP S57176756 A JPS57176756 A JP S57176756A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
channel
function element
isolating region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062909A
Other languages
Japanese (ja)
Other versions
JPS6056292B2 (en
Inventor
Isao Okura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56062909A priority Critical patent/JPS6056292B2/en
Publication of JPS57176756A publication Critical patent/JPS57176756A/en
Publication of JPS6056292B2 publication Critical patent/JPS6056292B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the integration of an integrated circuit device by applying a voltage to both MOSs adjacent to a logic function element formed of plural pairs of P-channel and N-channel MOSs, thereby shutting off and eliminating an isolating region. CONSTITUTION:A P type well 34 is formed in an N type substrate, a plurality of gate electrodes 31a of N channel MOSFET and a plurality of gate electrodes 31b of P channel MOSFET are provided, thereby forming a gate array, plural pairs of them are selected to form a logic function element 30, a voltage is applied to a pair of adjacent MOSFET 311a and 311b to the function element 30, thereby shutting off them and electrically isolating the element 30 from the other part. In this manner, the isolating region and the wire connecting over the isolating region can be eliminated, thereby improving the integration of the integrated circuit.
JP56062909A 1981-04-23 1981-04-23 Complementary MOS integrated circuit device Expired JPS6056292B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062909A JPS6056292B2 (en) 1981-04-23 1981-04-23 Complementary MOS integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062909A JPS6056292B2 (en) 1981-04-23 1981-04-23 Complementary MOS integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57176756A true JPS57176756A (en) 1982-10-30
JPS6056292B2 JPS6056292B2 (en) 1985-12-09

Family

ID=13213845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062909A Expired JPS6056292B2 (en) 1981-04-23 1981-04-23 Complementary MOS integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6056292B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186348A (en) * 1981-05-11 1982-11-16 Ricoh Co Ltd Master sliced large-scale integrated circuit
JPS57196556A (en) * 1981-05-27 1982-12-02 Toshiba Corp Semiconductor integrated circuit device
JPS6038835A (en) * 1983-08-11 1985-02-28 Mitsubishi Electric Corp Semiconductor integrated circuit device
DE3603953A1 (en) * 1985-02-07 1986-08-14 Mitsubishi Denki K.K., Tokio/Tokyo SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
JPS6264135A (en) * 1985-09-13 1987-03-23 Fujitsu Ltd Switching path display device
JPH0289365A (en) * 1988-09-27 1990-03-29 Nec Corp Cmos integrated circuit
JPH0642538B2 (en) * 1986-09-08 1994-06-01 ヒユーズ・エアクラフト・カンパニー Master slice for integrated circuits

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186348A (en) * 1981-05-11 1982-11-16 Ricoh Co Ltd Master sliced large-scale integrated circuit
JPS57196556A (en) * 1981-05-27 1982-12-02 Toshiba Corp Semiconductor integrated circuit device
JPS6038835A (en) * 1983-08-11 1985-02-28 Mitsubishi Electric Corp Semiconductor integrated circuit device
DE3603953A1 (en) * 1985-02-07 1986-08-14 Mitsubishi Denki K.K., Tokio/Tokyo SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
JPS6264135A (en) * 1985-09-13 1987-03-23 Fujitsu Ltd Switching path display device
JPH0642538B2 (en) * 1986-09-08 1994-06-01 ヒユーズ・エアクラフト・カンパニー Master slice for integrated circuits
JPH0289365A (en) * 1988-09-27 1990-03-29 Nec Corp Cmos integrated circuit

Also Published As

Publication number Publication date
JPS6056292B2 (en) 1985-12-09

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