JPS57196556A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57196556A
JPS57196556A JP8035281A JP8035281A JPS57196556A JP S57196556 A JPS57196556 A JP S57196556A JP 8035281 A JP8035281 A JP 8035281A JP 8035281 A JP8035281 A JP 8035281A JP S57196556 A JPS57196556 A JP S57196556A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
general use
circuit device
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8035281A
Other languages
Japanese (ja)
Inventor
Tomoji Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8035281A priority Critical patent/JPS57196556A/en
Publication of JPS57196556A publication Critical patent/JPS57196556A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive to enhance the using efficiency of a semiconductor integrated circuit device by a method wherein MOSFET's of 10 pieces or more having the same cnstitution are formed on a semiconductor chip, and adjoining sources or drains are arranged in series being made in common with each other to form a cell for general use. CONSTITUTION:A diffusion layer 11 is formed on the semiconductor chip, and by providing contact holes 12 of the plural number and polycrystalline Si gates 13 of the plural number, the cell for general use consisting of the series bodies of the MOSFET's Q11-Q1N of 10 pieces or more having the same conductive channel and the same threshold votage is formed. The cells for general use thereof are accumulated to be formed in the matrix type, and the master slice form semiconductor integrated circuit to realize the desired logic function is formed by designing the wiring pattern. Accordingly to reduce the unused transistor to the utmost can be attained.
JP8035281A 1981-05-27 1981-05-27 Semiconductor integrated circuit device Pending JPS57196556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8035281A JPS57196556A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8035281A JPS57196556A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57196556A true JPS57196556A (en) 1982-12-02

Family

ID=13715853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8035281A Pending JPS57196556A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57196556A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038835A (en) * 1983-08-11 1985-02-28 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS6047440A (en) * 1983-08-26 1985-03-14 Fujitsu Ltd Semiconductor integrated circuit
JPS6055641A (en) * 1983-09-07 1985-03-30 Agency Of Ind Science & Technol Mos type silicon integrated circuit element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176756A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Complementary mos integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176756A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Complementary mos integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038835A (en) * 1983-08-11 1985-02-28 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS6047440A (en) * 1983-08-26 1985-03-14 Fujitsu Ltd Semiconductor integrated circuit
JPS6055641A (en) * 1983-09-07 1985-03-30 Agency Of Ind Science & Technol Mos type silicon integrated circuit element

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