JPS55121666A - Mos transistor circuit - Google Patents
Mos transistor circuitInfo
- Publication number
- JPS55121666A JPS55121666A JP2887279A JP2887279A JPS55121666A JP S55121666 A JPS55121666 A JP S55121666A JP 2887279 A JP2887279 A JP 2887279A JP 2887279 A JP2887279 A JP 2887279A JP S55121666 A JPS55121666 A JP S55121666A
- Authority
- JP
- Japan
- Prior art keywords
- gates
- drain
- mos transistor
- transistor circuit
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the increase of the area of a pattern and simplify the fabricating steps of a MOS transistor circuit by enabling connection between drain and drain with polysilicon. CONSTITUTION:There are formed sources 501, 504, 505, 508, drains 502, 503, 506, 507, gates 510, 511, and gates or wires 512, 513. The gates 510, 511 and the gates or wires 512, 513 are formed of polysilicon. The gate of p-channel is connected from the p-type side of the connection between the drain and the drain at the previous stage, and the gate of n-channel is connected from the n-type side thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2887279A JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2887279A JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55121666A true JPS55121666A (en) | 1980-09-18 |
JPS6125218B2 JPS6125218B2 (en) | 1986-06-14 |
Family
ID=12260465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2887279A Granted JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121666A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4450620A (en) * | 1983-02-18 | 1984-05-29 | Bell Telephone Laboratories, Incorporated | Fabrication of MOS integrated circuit devices |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145027U (en) * | 1985-02-28 | 1986-09-06 | ||
JPH0338017Y2 (en) * | 1985-03-18 | 1991-08-12 | ||
JPS62171322U (en) * | 1986-04-22 | 1987-10-30 |
-
1979
- 1979-03-13 JP JP2887279A patent/JPS55121666A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4450620A (en) * | 1983-02-18 | 1984-05-29 | Bell Telephone Laboratories, Incorporated | Fabrication of MOS integrated circuit devices |
Also Published As
Publication number | Publication date |
---|---|
JPS6125218B2 (en) | 1986-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6420666A (en) | Power mos transistor structure | |
GB2071910B (en) | Fabrication of complementary bipolar transistors with cmos devices with polysilicon gates | |
SE7614157L (en) | WAY TO REMOVE A SEMICONDUCTOR DEVICE | |
JPS51142929A (en) | Production method of n channel mis semiconductor devices | |
JPS55121666A (en) | Mos transistor circuit | |
JPS53112069A (en) | Production of mis transistor | |
JPS57176756A (en) | Complementary mos integrated circuit device | |
JPS5322378A (en) | Production of field effect transistor s | |
JPS57100746A (en) | Semiconductor integrated circuit device | |
JPS5736856A (en) | Manufacture of complementary type insulated gate field effect semiconductor device | |
JPS57154869A (en) | Semiconductor device | |
JPS53143179A (en) | Production of complementary type mos transistors | |
JPS5269278A (en) | Production of s#-gate type complementary mos semiconductor device | |
JPS54132179A (en) | Complementary insulating gate field effect semiconductor device | |
JPS54112180A (en) | Manufacture of complementary type insulation gate field effect semiconductor device | |
JPS6484636A (en) | Manufacture of mos gate array | |
JPS57157557A (en) | Complementary mis integrated circuit | |
JPS5752173A (en) | Junction type field effect transistor | |
JPS5323555A (en) | Complemen tary mos integrated circuit | |
JPS6482664A (en) | Semiconductor device and manufacture thereof | |
JPS5521187A (en) | Semiconductor device | |
JPS57172591A (en) | Read-only semiconductor storage device | |
EP0197730A3 (en) | Latch-up resistant integrated circuit and method of manufacture | |
JPS5743456A (en) | Manufacture of cmos integrated circuit | |
JPS5558574A (en) | Cmos semiconductor device |