JPS55121666A - Mos transistor circuit - Google Patents

Mos transistor circuit

Info

Publication number
JPS55121666A
JPS55121666A JP2887279A JP2887279A JPS55121666A JP S55121666 A JPS55121666 A JP S55121666A JP 2887279 A JP2887279 A JP 2887279A JP 2887279 A JP2887279 A JP 2887279A JP S55121666 A JPS55121666 A JP S55121666A
Authority
JP
Japan
Prior art keywords
gates
drain
mos transistor
transistor circuit
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2887279A
Other languages
Japanese (ja)
Other versions
JPS6125218B2 (en
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP2887279A priority Critical patent/JPS55121666A/en
Publication of JPS55121666A publication Critical patent/JPS55121666A/en
Publication of JPS6125218B2 publication Critical patent/JPS6125218B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the increase of the area of a pattern and simplify the fabricating steps of a MOS transistor circuit by enabling connection between drain and drain with polysilicon. CONSTITUTION:There are formed sources 501, 504, 505, 508, drains 502, 503, 506, 507, gates 510, 511, and gates or wires 512, 513. The gates 510, 511 and the gates or wires 512, 513 are formed of polysilicon. The gate of p-channel is connected from the p-type side of the connection between the drain and the drain at the previous stage, and the gate of n-channel is connected from the n-type side thereof.
JP2887279A 1979-03-13 1979-03-13 Mos transistor circuit Granted JPS55121666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2887279A JPS55121666A (en) 1979-03-13 1979-03-13 Mos transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2887279A JPS55121666A (en) 1979-03-13 1979-03-13 Mos transistor circuit

Publications (2)

Publication Number Publication Date
JPS55121666A true JPS55121666A (en) 1980-09-18
JPS6125218B2 JPS6125218B2 (en) 1986-06-14

Family

ID=12260465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2887279A Granted JPS55121666A (en) 1979-03-13 1979-03-13 Mos transistor circuit

Country Status (1)

Country Link
JP (1) JPS55121666A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450620A (en) * 1983-02-18 1984-05-29 Bell Telephone Laboratories, Incorporated Fabrication of MOS integrated circuit devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145027U (en) * 1985-02-28 1986-09-06
JPH0338017Y2 (en) * 1985-03-18 1991-08-12
JPS62171322U (en) * 1986-04-22 1987-10-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450620A (en) * 1983-02-18 1984-05-29 Bell Telephone Laboratories, Incorporated Fabrication of MOS integrated circuit devices

Also Published As

Publication number Publication date
JPS6125218B2 (en) 1986-06-14

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