JPS6484636A - Manufacture of mos gate array - Google Patents
Manufacture of mos gate arrayInfo
- Publication number
- JPS6484636A JPS6484636A JP24106587A JP24106587A JPS6484636A JP S6484636 A JPS6484636 A JP S6484636A JP 24106587 A JP24106587 A JP 24106587A JP 24106587 A JP24106587 A JP 24106587A JP S6484636 A JPS6484636 A JP S6484636A
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- gates
- gate
- gate array
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To enhance the freedom in the wiring of a circuit by a method wherein the fellow gates of opposed MOSFETs are previously connected to each other and a gate of the gates is arbitrarily cut without newly adding a mask and a process to a wiring that follows. CONSTITUTION:A gate array is constituted of P-type source/drain regions 21, N-type source/drain regions 22 and gates 23 common to P- and N-MOSFETs. The gates of the P-MOSFET and the gates of the N-MOSFET to oppose to the P-MOSFET are previously connected to each other and are formed to use as the common gates 23 and in case a gate signal of the P-MOSFET and a gate signal of the N-MOSFET to oppose to the P-MOSFET are different from each other, the gate 23 is cut at a cutting place 25.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24106587A JPS6484636A (en) | 1987-09-26 | 1987-09-26 | Manufacture of mos gate array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24106587A JPS6484636A (en) | 1987-09-26 | 1987-09-26 | Manufacture of mos gate array |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484636A true JPS6484636A (en) | 1989-03-29 |
Family
ID=17068776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24106587A Pending JPS6484636A (en) | 1987-09-26 | 1987-09-26 | Manufacture of mos gate array |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484636A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7548387B2 (en) * | 2005-04-06 | 2009-06-16 | Carl Zeiss Smt Ag | Optical imaging device |
JP2014010839A (en) * | 2012-06-27 | 2014-01-20 | Samsung Electronics Co Ltd | Semiconductor integrated circuit, and design method and manufacturing method of the same |
-
1987
- 1987-09-26 JP JP24106587A patent/JPS6484636A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7548387B2 (en) * | 2005-04-06 | 2009-06-16 | Carl Zeiss Smt Ag | Optical imaging device |
JP2014010839A (en) * | 2012-06-27 | 2014-01-20 | Samsung Electronics Co Ltd | Semiconductor integrated circuit, and design method and manufacturing method of the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR850000800A (en) | Master Slice Integrated Circuit Device | |
KR850006656A (en) | Manufacturing method of semiconductor integrated circuit device | |
EP0284065A3 (en) | Structure of complementary field effect transistor | |
DE3564517D1 (en) | Semiconductor device comprising n-channel and p-channel transistors and production method | |
EP0183204A3 (en) | Process for fabricating semiconductor integrated circuit devices | |
JPS6480063A (en) | Npn bipolar transistor | |
JPS6484636A (en) | Manufacture of mos gate array | |
FR2568723B1 (en) | INTEGRATED CIRCUIT, IN PARTICULAR OF THE MOS TYPE, AND ITS MANUFACTURING METHOD | |
JPS57176756A (en) | Complementary mos integrated circuit device | |
JPS55121666A (en) | Mos transistor circuit | |
EP0114061A3 (en) | Semiconductor device having cmos structures | |
JPS5749253A (en) | Semiconductor integrated circuit | |
EP0181760A3 (en) | A device comprising a pair of cmos fets and a method of making it | |
JPS57154869A (en) | Semiconductor device | |
JPS553252A (en) | Preset circuit | |
JPS647536A (en) | Semi-custom semiconductor integrated circuit | |
EP0197730A3 (en) | Latch-up resistant integrated circuit and method of manufacture | |
JPS6439760A (en) | Complementary mos integrated circuit device | |
JPS5521187A (en) | Semiconductor device | |
JPS6461942A (en) | Complementary metal-oxide semiconductor device | |
JPS57190423A (en) | Semiconductor circuit | |
JPS5373961A (en) | Logic circuit | |
JPS6418250A (en) | Semiconductor integrated circuit | |
JPS54132179A (en) | Complementary insulating gate field effect semiconductor device | |
JPS5762565A (en) | Semiconductor device |