JPS6418250A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6418250A
JPS6418250A JP62175059A JP17505987A JPS6418250A JP S6418250 A JPS6418250 A JP S6418250A JP 62175059 A JP62175059 A JP 62175059A JP 17505987 A JP17505987 A JP 17505987A JP S6418250 A JPS6418250 A JP S6418250A
Authority
JP
Japan
Prior art keywords
electric current
current characteristic
displays
drain
pieces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62175059A
Other languages
Japanese (ja)
Other versions
JPH06105775B2 (en
Inventor
Kenichi Nakamura
Makoto Segawa
Kiyobumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62175059A priority Critical patent/JPH06105775B2/en
Publication of JPS6418250A publication Critical patent/JPS6418250A/en
Publication of JPH06105775B2 publication Critical patent/JPH06105775B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To prevent a malfunction of a MOS transistor circuit by a method wherein, even when an LDD structure or the like whose electric current characteristic displays asymmetry by replacing a source with a drain is adopted, the electric current characteristic of individual MOS transistors displays symmetry. CONSTITUTION:Individual MOS transistors Q1-Q5, Q1'-Q5' are divided into their respective even pieces of transistor elements Q11, Q12, Q21, Q22, ...; two each of these even pieces are formed in such a way that their source regions or their drain regions are arranged face to face with each other; a width of gate channels of these two pieces of the transistor elements is formed to be equal; a length of the gate channels is formed to be equal. Accordingly, even when an LDD structure whose electric current characteristic displays asymmetry by replacing a source with a drain is adopted, the electric current characteristic of the individual MOS transistors Q1-Q5, Q1'-Q5' displays symmetry. By this setup, the normal operation of a MOS transistor circuit is realized.
JP62175059A 1987-07-14 1987-07-14 Semiconductor integrated circuit Expired - Lifetime JPH06105775B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62175059A JPH06105775B2 (en) 1987-07-14 1987-07-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175059A JPH06105775B2 (en) 1987-07-14 1987-07-14 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6418250A true JPS6418250A (en) 1989-01-23
JPH06105775B2 JPH06105775B2 (en) 1994-12-21

Family

ID=15989513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175059A Expired - Lifetime JPH06105775B2 (en) 1987-07-14 1987-07-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH06105775B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0424935A2 (en) * 1989-10-26 1991-05-02 Kabushiki Kaisha Toshiba Circuit for driving a liquid crystal panel
JP2008210902A (en) * 2007-02-24 2008-09-11 Seiko Instruments Inc Current mirror circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207677A (en) * 1982-05-28 1983-12-03 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207677A (en) * 1982-05-28 1983-12-03 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0424935A2 (en) * 1989-10-26 1991-05-02 Kabushiki Kaisha Toshiba Circuit for driving a liquid crystal panel
JP2008210902A (en) * 2007-02-24 2008-09-11 Seiko Instruments Inc Current mirror circuit

Also Published As

Publication number Publication date
JPH06105775B2 (en) 1994-12-21

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