WO1979000461A1 - Complementary mis-semiconductor integrated circuits - Google Patents

Complementary mis-semiconductor integrated circuits Download PDF

Info

Publication number
WO1979000461A1
WO1979000461A1 PCT/JP1978/000048 JP7800048W WO7900461A1 WO 1979000461 A1 WO1979000461 A1 WO 1979000461A1 JP 7800048 W JP7800048 W JP 7800048W WO 7900461 A1 WO7900461 A1 WO 7900461A1
Authority
WO
WIPO (PCT)
Prior art keywords
channel mis
cell arrays
single common
transistors
transistor
Prior art date
Application number
PCT/JP1978/000048
Other languages
French (fr)
Japanese (ja)
Inventor
N Matsumura
R Hoshikawa
H Ichikawa
Y Sugiura
S Sato
Original Assignee
Fujitsu Ltd
N Matsumura
R Hoshikawa
H Ichikawa
Y Sugiura
S Sato
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, N Matsumura, R Hoshikawa, H Ichikawa, Y Sugiura, S Sato filed Critical Fujitsu Ltd
Priority to DE7878900309T priority Critical patent/DE2862337D1/en
Publication of WO1979000461A1 publication Critical patent/WO1979000461A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor device having a plurality of unit cells, wherein the unit cells arranged along the row direction of a semiconductor substrate define unit cell arrays which are arranged along a columnar direction of the semiconductor substrate, and include depletion regions formed between adjacent primitive cell arrays. The unit cells are each composed of first and second P-channel MIS-transistors and first and second N-channel MIS-transistors. The first P-channel MIS-transistor and first N-channel MIS-transistor each have a gate defining a first single common gate, and the second P-channel MIS-transistor and second N-channel MIS-transistor each have a gate defining a second single common gate. The sources or drains of the first and second P-channel MIS-transistors each form a first single common source or drain and, on the other hand, the sources or drains of the first and second N-channel MIS-transistors each form a second single common source or drain. The first and second single common gates are each provided at both terminals of the unit cell arrays with terminal electrodes and are further provided at the center of the unit cell arrays with central terminal electrodes. The unit cells include small depletion regions extending along both sides of the unit cell arrays. These small depletion regions may be used as regions for wiring along the columnar direction of the small depletion regions.
PCT/JP1978/000048 1977-12-30 1978-12-11 Complementary mis-semiconductor integrated circuits WO1979000461A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE7878900309T DE2862337D1 (en) 1977-12-30 1978-12-11 Complementary mis-semiconductor integrated circuits

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP77/158445 1977-12-30
JP52158445A JPS5925381B2 (en) 1977-12-30 1977-12-30 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
WO1979000461A1 true WO1979000461A1 (en) 1979-07-26

Family

ID=15671910

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1978/000048 WO1979000461A1 (en) 1977-12-30 1978-12-11 Complementary mis-semiconductor integrated circuits

Country Status (5)

Country Link
US (1) US4412237A (en)
EP (1) EP0006958B1 (en)
JP (1) JPS5925381B2 (en)
DE (1) DE2862337D1 (en)
WO (1) WO1979000461A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058504A2 (en) * 1981-02-12 1982-08-25 Fujitsu Limited Method of constructing a delay circuit in a master slice IC
WO1985000468A1 (en) * 1983-07-14 1985-01-31 Advanced Micro Devices, Inc. A semiconductor die having undedicated input/output cells

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JPS5636166A (en) * 1979-08-31 1981-04-09 Toshiba Corp Nonvolatile semiconductor memory
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US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
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JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
EP0074805B2 (en) * 1981-09-10 1992-03-11 Fujitsu Limited Semiconductor integrated circuit comprising a semiconductor substrate and interconnecting layers
JPS5864046A (en) * 1981-10-13 1983-04-16 Nec Corp Master slice semiconductor integrated circuit device
JPS5866342A (en) * 1981-10-16 1983-04-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5890758A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Complementary type integrated circuit device
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058504A2 (en) * 1981-02-12 1982-08-25 Fujitsu Limited Method of constructing a delay circuit in a master slice IC
EP0058504A3 (en) * 1981-02-12 1983-08-31 Fujitsu Limited Method of constructing a delay circuit in a master slice ic
US4516312A (en) * 1981-02-12 1985-05-14 Fujitsu Limited Method for constructing delay circuits in a master slice IC
WO1985000468A1 (en) * 1983-07-14 1985-01-31 Advanced Micro Devices, Inc. A semiconductor die having undedicated input/output cells

Also Published As

Publication number Publication date
JPS5493375A (en) 1979-07-24
DE2862337D1 (en) 1983-11-17
EP0006958B1 (en) 1983-10-12
EP0006958A4 (en) 1980-05-06
EP0006958A1 (en) 1980-01-23
US4412237A (en) 1983-10-25
JPS5925381B2 (en) 1984-06-16

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