JPS58164242A - Master slice type integrated circuit - Google Patents

Master slice type integrated circuit

Info

Publication number
JPS58164242A
JPS58164242A JP4689382A JP4689382A JPS58164242A JP S58164242 A JPS58164242 A JP S58164242A JP 4689382 A JP4689382 A JP 4689382A JP 4689382 A JP4689382 A JP 4689382A JP S58164242 A JPS58164242 A JP S58164242A
Authority
JP
Japan
Prior art keywords
wirings
cells
voltage
master slice
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4689382A
Other languages
Japanese (ja)
Inventor
Tsutomu Hatano
波田野 勤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4689382A priority Critical patent/JPS58164242A/en
Publication of JPS58164242A publication Critical patent/JPS58164242A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the margin against a noise by additionally forming at least two wirings of the same voltage as wirings of pectinated shape which supply power source voltage to cells forming an IC, thereby averaging the voltage distribution of an entire chip. CONSTITUTION:Many cells 2 are formed in a master slice type IC, power wirings 1 from a power source pad 3 are formed in a pectinated shape while containing current source cells 4 forming the cells 2, and contacted with the respective cells. In this structure, many power source wirings 6 to become 2-layer metals are further formed parallel to electrode wirings 1, power wirings 5 to become 1-layer metal at least not less than two are formed while perpendicularly crossing them, and the wirings 6 and 5 are connected via a through hole 7. In this manner, the wirings 5 and 6 which are equal to the voltage of the wirings 1 and cover the wirings 1 are formed in addition to the wirings 1, thereby alleviating the voltage shift of the power source voltage and increasing the margin against a noise of the cell isolated from the pad 3.

Description

【発明の詳細な説明】 本発明は、マスタスライス方式集積回路に係り特にチッ
プ上の電源配線の引き廻しに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a master slice type integrated circuit, and particularly to the routing of power supply wiring on a chip.

従来、マスタスライス方式集積回路のt源配−はチップ
の一片にのみ電源パッドtVする場合、第1図のように
横目状になりてい九。第1図で、1は電源配−を示しチ
ップ上に行列状に配列され九回路単位(以下セルと呼ぶ
)2に電源を供給する。3は電源用パッドである。斜脚
を施したセル4が電流をiし出している(あるいは引き
込んでいる)と考えて、配線抵抗による電源電圧の電位
シフトを計算して図示したのが第2図である。第2図で
は、電源電圧の電位シフトが第1図にみられるようKl
源パッド3に対して左右対称なため、左半分の様子のみ
を示している。第2図に観られるようにチップ上のセル
の配置に依存して電源電圧シフトに偏シがある。この電
位シフトは電源バットから違いセルの雑音余裕を小さく
する要因となる。従来の配線構造o#!l’まこの間馳
を回避するには配線抵抗を小さくする目的で配線幅を広
けた9、配線金属の膜厚を大きくする等の改良に依って
いたが、チップ面積が大きくなって歩留まりが下がる等
%製造上に難点があった。
Conventionally, when the power supply pad tV of a master slice type integrated circuit is connected to only one side of the chip, the power supply layout is cross-grained as shown in FIG. In FIG. 1, reference numeral 1 indicates a power supply wiring, which is arranged in rows and columns on the chip and supplies power to nine circuit units (hereinafter referred to as cells) 2. 3 is a power pad. Fig. 2 shows a calculation of the potential shift of the power supply voltage due to the wiring resistance, assuming that the cell 4 with the diagonal legs is drawing out (or drawing in) current. In Figure 2, the potential shift of the power supply voltage is shown in Figure 1.
Since it is symmetrical with respect to the source pad 3, only the left half is shown. As seen in FIG. 2, the power supply voltage shift is uneven depending on the arrangement of cells on the chip. This potential shift is a factor that reduces the noise margin of the cell, which differs from the power supply voltage. Conventional wiring structure o#! In order to avoid this gap, improvements were made such as widening the wiring width to reduce wiring resistance9 and increasing the thickness of the wiring metal, but this increased the chip area and lowered the yield. There were some difficulties in manufacturing.

本発明は、配線の引き廻しに関して簡単な改良を加える
だけで上記欠点を解消し、雑音に対して余裕の大きいマ
スタスライス方式集積回路を提供するものである。
The present invention provides a master slice type integrated circuit which eliminates the above-mentioned drawbacks by simply making improvements in wiring, and which has a large margin against noise.

即ち1本発明に依るマスタスライス集積回路は。That is, one master slice integrated circuit according to the present invention.

セル各々に電源を供給する櫛目状の配線の他に、前記配
線と同電位の配線を少なくとも2本設けることによって
チップ全体の電位分布を平均化したことを特徴としてい
る。
In addition to the comb-like wiring that supplies power to each cell, at least two wirings having the same potential as the wiring are provided to average the potential distribution over the entire chip.

以下1図面を用いて本発明の−*施例について説明する
Embodiments of the present invention will be described below with reference to one drawing.

第3図は1本発明に依るマスタスライス方式集積回路の
配@病造の一実施例を示す図である。5は1層金属によ
る電源配線、6は2層金属の電源配線で、これらはスル
ーホール7でつながっている。@3図と第1図との相違
は、電流パスが多くがあっても電流分布がチップ全体に
広がる効果をもち、電源電圧の電位シフトの偏りを緩和
するとともに、熱の分横に対しても役立つ結果になる。
FIG. 3 is a diagram showing an embodiment of the layout of a master slice integrated circuit according to the present invention. Reference numeral 5 denotes a power supply wiring made of one layer of metal, and numeral 6 denotes a power supply wiring made of two layers of metal, which are connected by a through hole 7. The difference between Figure 3 and Figure 1 is that even if there are many current paths, the current distribution spreads over the entire chip, which alleviates the bias in the potential shift of the power supply voltage and also reduces the heat distribution. will also yield useful results.

@4図は*@1図と同様のセル配置を仮定し、第3図の
配線構造をとった場合の配線抵抗による電fII111
圧の電位シフトの計算結果を示した図である。第4図に
−られるように電源電圧の電位77トは第2図よりも大
きさ、偏りともに緩和されている。−電源電圧の電位シ
フトの最大値で比較すると1本計算刊においてFi、第
4図の電位シフトは@2図のそれの40%減になってい
る。
Figure @4 shows the electric fII111 due to wiring resistance when assuming the same cell arrangement as in Figure *@1 and using the wiring structure shown in Figure 3.
It is a figure showing the calculation result of the electric potential shift of pressure. As shown in FIG. 4, the potential 77 of the power supply voltage is more relaxed in magnitude and bias than in FIG. -Comparing the maximum value of the potential shift of the power supply voltage, the potential shift of Fi in Figure 4 is 40% less than that of Figure @2 in one calculation.

第3においてFi、横軸1層金属配硼を1本しか用いて
いないが、横軸1層金属配線の数を増した方が電源電圧
の電位シフト緩和に対して効果が大きいことは明らかで
ある。
In the third example, only one single-layer metal wiring is used on the horizontal axis, but it is clear that increasing the number of single-layer metal wiring on the horizontal axis is more effective in mitigating the potential shift of the power supply voltage. be.

また、第21W、 1lIJaillZ)計算にオイテ
fl 10 X11セルを有するチップを仮定し九が、
セル数が多くなるにつれて電位シフトが大きくなる可能
性が大きく、この電位シフトの緩和に対して本発明は有
効な手段である。
Also, assuming a chip with 10 X11 cells in the calculation (21stW, 1lIJailZ), 9 is
As the number of cells increases, there is a greater possibility that the potential shift will increase, and the present invention is an effective means for alleviating this potential shift.

また%第3図においては、セル各々に電源を供給する横
目状の配線と新たに設けた配線を縛なるノーに置いてス
ルーホールでつないでいるが、前記面目状配線と新たに
設けた配線を同−mK設けても、電源電圧の電位りフト
の緩和に対して効果を有する。
In addition, in Figure 3, the cross-grained wiring that supplies power to each cell and the newly installed wiring are placed in the binding no and are connected by a through hole. Even if -mK is provided, it is effective in alleviating the potential drift of the power supply voltage.

以上の説明かられかるように1本発明に依るマスタスラ
イス方式集積回路は、セル各々に°電源を供給する櫛目
状の配線の他に前記配線と1交する方向に、前記配線と
同電位の配−を少なくとも2本設けたことを特徴としパ
ターン設計において前記改良を施こすことによって権道
上の一点を伴うことなく*S電圧の電位シフトを緩和し
、aSパ、ドから醸れ友セルの雑音余裕を大きくする効
果を有する。
As can be seen from the above description, in the master slice integrated circuit according to the present invention, in addition to the comb-shaped wiring that supplies power to each cell, there are By making the above-mentioned improvements in the pattern design, the potential shift of the *S voltage can be alleviated without causing a single point on the right, and it can be changed from aS P and D to This has the effect of increasing the noise margin.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の電源配線パターンと、マスタスライス方
式集積回路の構成例を示す図、第2図は81!1図の構
成における配1w砥杭による電源電圧の電位シフトを示
す図、第3図は本発明の一実施例を示す電源配線パター
ンを示す図、@4図は第3図の構成における配線抵抗に
よる電源電圧の電位シフトを示す図、である。 なお図において、l・・・・・・電源配a、2・°°°
・・セルの配置、3・・・・・・電源パッド、4・・・
・・・電流源として作用しているセル、5・・・・・・
1層の金属配線% 6・・・・・・2層の金属配41.
 7・・・・・・1,2層金属をつなぐスルーホール、
を示す。 篤 l 囲 塚匂・・5県8 篤 3 口
Fig. 1 is a diagram showing a conventional power supply wiring pattern and an example of the configuration of a master slice type integrated circuit, Fig. 2 is a diagram showing the potential shift of the power supply voltage due to the wiring 1w grinding pile in the configuration of Fig. 81! The figure is a diagram showing a power supply wiring pattern showing an embodiment of the present invention, and Figure @4 is a diagram showing a potential shift of the power supply voltage due to wiring resistance in the configuration of FIG. 3. In the diagram, l...Power distribution a, 2.°°°
...Cell arrangement, 3...Power pad, 4...
...Cell acting as a current source, 5...
1 layer metal interconnect % 6...2 layer metal interconnect 41.
7...Through hole connecting 1st and 2nd layer metal,
shows. Atsushi l Izukao...5 prefectures 8 Atsushi 3 mouths

Claims (2)

【特許請求の範囲】[Claims] (1)任意の(ロ)路慎能を有する回路単位klチップ
上に複数個備え、前記回路単位間の電気的接続を行なう
ことによって所望の論理機能を有するようにしたマスタ
スライス方式集積回路において、前期回路単位各々に櫛
目状に敷設された電源配線が設けられ、かつ前記配線と
直交する方向に、前記配線と同電位の配線が少なくとも
2本設けられたことを特徴とするマスタスライス方式集
積回路。
(1) In a master slice type integrated circuit in which a plurality of circuit units having an arbitrary (b) circuit function are provided on a kl chip and a desired logical function is achieved by electrically connecting the circuit units. , a master slice type integration characterized in that each circuit unit is provided with power supply wiring laid in a comb pattern, and at least two wirings having the same potential as the wiring are provided in a direction perpendicular to the wiring. circuit.
(2)互いに直交する2本の配線を異なる層に設は九こ
とを特徴とする特許請求範囲第(1)項に記載のマスタ
スライス方式集積回路。
(2) The master slice type integrated circuit according to claim (1), characterized in that two interconnections orthogonal to each other are provided in different layers.
JP4689382A 1982-03-24 1982-03-24 Master slice type integrated circuit Pending JPS58164242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4689382A JPS58164242A (en) 1982-03-24 1982-03-24 Master slice type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4689382A JPS58164242A (en) 1982-03-24 1982-03-24 Master slice type integrated circuit

Publications (1)

Publication Number Publication Date
JPS58164242A true JPS58164242A (en) 1983-09-29

Family

ID=12760035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4689382A Pending JPS58164242A (en) 1982-03-24 1982-03-24 Master slice type integrated circuit

Country Status (1)

Country Link
JP (1) JPS58164242A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493375A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device
JPS57121250A (en) * 1981-01-20 1982-07-28 Toshiba Corp Semiconductor integrated circuit
JPS5851538A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493375A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device
JPS57121250A (en) * 1981-01-20 1982-07-28 Toshiba Corp Semiconductor integrated circuit
JPS5851538A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Semiconductor integrated circuit device

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