JPS57121250A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57121250A
JPS57121250A JP56006680A JP668081A JPS57121250A JP S57121250 A JPS57121250 A JP S57121250A JP 56006680 A JP56006680 A JP 56006680A JP 668081 A JP668081 A JP 668081A JP S57121250 A JPS57121250 A JP S57121250A
Authority
JP
Japan
Prior art keywords
wire
wiring
region
regions
signal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56006680A
Other languages
Japanese (ja)
Other versions
JPS6351381B2 (en
Inventor
Tomoji Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56006680A priority Critical patent/JPS57121250A/en
Publication of JPS57121250A publication Critical patent/JPS57121250A/en
Publication of JPS6351381B2 publication Critical patent/JPS6351381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To enable wiring of a power source having small DC resistance and small inductance without losing the degree of freedom of wiring by arranging a power source wire and a ground wire on the wiring tracks of a vacant region, to which no signal wire is supplied on the wiring region. CONSTITUTION:A plurality of function element regions 3 made of a plurality of cell rows 2 each having logic function cells 1 are formed on a semiconductor chip 8, and the intermediate ports between the regions 3 are used as signal wire laying regions 4. A bus 9 having a power line and a ground line is arranged to surround the regions 3, 4, and a power wire 6 and a ground wire 7 are arranged on the element region. A signal wire 5 is laied along the wiring track on the region 4, and an auxiliary power line or ground line 10 forming a bypass are formed on the vacant region on the region 4 on which no signal wire is laid. In this manner, the DC resistance of the power line wire is substantially reduced, and the wiring inductance can be simultaneously reduced.
JP56006680A 1981-01-20 1981-01-20 Semiconductor integrated circuit Granted JPS57121250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56006680A JPS57121250A (en) 1981-01-20 1981-01-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56006680A JPS57121250A (en) 1981-01-20 1981-01-20 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57121250A true JPS57121250A (en) 1982-07-28
JPS6351381B2 JPS6351381B2 (en) 1988-10-13

Family

ID=11645073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56006680A Granted JPS57121250A (en) 1981-01-20 1981-01-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57121250A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164242A (en) * 1982-03-24 1983-09-29 Nec Corp Master slice type integrated circuit
JPS61276248A (en) * 1985-05-30 1986-12-06 Toshiba Corp Semiconductor integrated circuit device
JPS6233440A (en) * 1985-08-06 1987-02-13 Nec Corp Integrated circuit device
JPS6235643A (en) * 1985-08-09 1987-02-16 Hitachi Ltd Semiconductor integrated circuit device
JPH01100942A (en) * 1987-10-14 1989-04-19 Toshiba Corp Semiconductor integrated circuit
JPH0225070A (en) * 1988-07-14 1990-01-26 Toshiba Corp Semiconductor integrated circuit device
JPH0262062A (en) * 1988-08-26 1990-03-01 Nec Corp Master slice type semiconductor device
JPH0282552A (en) * 1988-09-19 1990-03-23 Fujitsu Ltd Semiconductor integrated circuit
US4914503A (en) * 1986-08-12 1990-04-03 Fujitsu Limited Semiconductor device
JPH0695553B2 (en) * 1982-07-01 1994-11-24 モトロ−ラ・インコ−ポレ−テツド Gate array
US6917557B2 (en) 2002-12-05 2005-07-12 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit having unit cells

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164242A (en) * 1982-03-24 1983-09-29 Nec Corp Master slice type integrated circuit
JPH0695553B2 (en) * 1982-07-01 1994-11-24 モトロ−ラ・インコ−ポレ−テツド Gate array
JPS61276248A (en) * 1985-05-30 1986-12-06 Toshiba Corp Semiconductor integrated circuit device
JPS6233440A (en) * 1985-08-06 1987-02-13 Nec Corp Integrated circuit device
JPS6235643A (en) * 1985-08-09 1987-02-16 Hitachi Ltd Semiconductor integrated circuit device
US4914503A (en) * 1986-08-12 1990-04-03 Fujitsu Limited Semiconductor device
JPH01100942A (en) * 1987-10-14 1989-04-19 Toshiba Corp Semiconductor integrated circuit
JPH0225070A (en) * 1988-07-14 1990-01-26 Toshiba Corp Semiconductor integrated circuit device
JPH0262062A (en) * 1988-08-26 1990-03-01 Nec Corp Master slice type semiconductor device
JPH0282552A (en) * 1988-09-19 1990-03-23 Fujitsu Ltd Semiconductor integrated circuit
US6917557B2 (en) 2002-12-05 2005-07-12 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit having unit cells

Also Published As

Publication number Publication date
JPS6351381B2 (en) 1988-10-13

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