GB2121601B - Uncommitted logic integrated circuit array - Google Patents
Uncommitted logic integrated circuit arrayInfo
- Publication number
- GB2121601B GB2121601B GB08215940A GB8215940A GB2121601B GB 2121601 B GB2121601 B GB 2121601B GB 08215940 A GB08215940 A GB 08215940A GB 8215940 A GB8215940 A GB 8215940A GB 2121601 B GB2121601 B GB 2121601B
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- circuit array
- logic integrated
- uncommitted logic
- uncommitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08215940A GB2121601B (en) | 1982-06-01 | 1982-06-01 | Uncommitted logic integrated circuit array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08215940A GB2121601B (en) | 1982-06-01 | 1982-06-01 | Uncommitted logic integrated circuit array |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2121601A GB2121601A (en) | 1983-12-21 |
GB2121601B true GB2121601B (en) | 1986-01-29 |
Family
ID=10530768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08215940A Expired GB2121601B (en) | 1982-06-01 | 1982-06-01 | Uncommitted logic integrated circuit array |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2121601B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60199230A (en) * | 1984-03-23 | 1985-10-08 | Omron Tateisi Electronics Co | Fuzzy logic integrated circuit |
JP3808116B2 (en) * | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | High voltage IC |
EP0738011B1 (en) | 1995-04-12 | 2014-12-10 | Fuji Electric Co., Ltd. | High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1440512A (en) * | 1973-04-30 | 1976-06-23 | Rca Corp | Universal array using complementary transistors |
JPS5925381B2 (en) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | Semiconductor integrated circuit device |
GB2018021B (en) * | 1978-04-01 | 1982-10-13 | Racal Microelect System | Uncommitted logic cells |
-
1982
- 1982-06-01 GB GB08215940A patent/GB2121601B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2121601A (en) | 1983-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |