JPS57198652A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS57198652A
JPS57198652A JP56084005A JP8400581A JPS57198652A JP S57198652 A JPS57198652 A JP S57198652A JP 56084005 A JP56084005 A JP 56084005A JP 8400581 A JP8400581 A JP 8400581A JP S57198652 A JPS57198652 A JP S57198652A
Authority
JP
Japan
Prior art keywords
drain
gate
source
fet
sets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56084005A
Other languages
Japanese (ja)
Other versions
JPS6047748B2 (en
Inventor
Kunihiko Goto
Hisami Tanaka
Hiroshi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56084005A priority Critical patent/JPS6047748B2/en
Publication of JPS57198652A publication Critical patent/JPS57198652A/en
Publication of JPS6047748B2 publication Critical patent/JPS6047748B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a pair of FETs having equal various characteristics by a method wherein Two FET gates aplitting the source, drain, and gate into many sets are alternately arranged and the source, drain, and gate of each FET are commonly connected. CONSTITUTION:Variations accompanying with the directionality of mask accuracy and expansion direction resulting in the cause of a variation in FET characteristics, and the amount of ion implantation have predetermined slopes in longitudinal and transverse directions. Therefore, the source, drain, and gate, Sa, Ga, Da of an FET1 are split into three sets and like the FET1, the Sb, Gb, Db of an FET2 are also split into three sets and they are alternately arranged. Especially, when the ratio of the channel width of each set is selected as W1:W2: W3=1:2:1, the arrangement is symmetrical in right and left, and up and down to the central line and variations having slopes in longitudinal transverse directions can be ofsfset each other. This arrangement is optimum for the layout of a pair of FETs for high accuracy differential amplifier or the like, for example.
JP56084005A 1981-06-01 1981-06-01 integrated circuit device Expired JPS6047748B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084005A JPS6047748B2 (en) 1981-06-01 1981-06-01 integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084005A JPS6047748B2 (en) 1981-06-01 1981-06-01 integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57198652A true JPS57198652A (en) 1982-12-06
JPS6047748B2 JPS6047748B2 (en) 1985-10-23

Family

ID=13818476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084005A Expired JPS6047748B2 (en) 1981-06-01 1981-06-01 integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6047748B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219164A (en) * 1985-03-25 1986-09-29 Nec Corp Semiconductor integrated circuit
US6552402B1 (en) 1998-04-09 2003-04-22 Matsushita Electric Industrial Co., Ltd. Composite MOS transistor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105732A (en) * 1975-03-14 1976-09-18 Hitachi Ltd
JPS53675A (en) * 1976-06-25 1978-01-06 Hitachi Ltd Apparaus for lighting high pressure steam discharge lamp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105732A (en) * 1975-03-14 1976-09-18 Hitachi Ltd
JPS53675A (en) * 1976-06-25 1978-01-06 Hitachi Ltd Apparaus for lighting high pressure steam discharge lamp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219164A (en) * 1985-03-25 1986-09-29 Nec Corp Semiconductor integrated circuit
US6552402B1 (en) 1998-04-09 2003-04-22 Matsushita Electric Industrial Co., Ltd. Composite MOS transistor device

Also Published As

Publication number Publication date
JPS6047748B2 (en) 1985-10-23

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