JPS5762565A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5762565A
JPS5762565A JP55137465A JP13746580A JPS5762565A JP S5762565 A JPS5762565 A JP S5762565A JP 55137465 A JP55137465 A JP 55137465A JP 13746580 A JP13746580 A JP 13746580A JP S5762565 A JPS5762565 A JP S5762565A
Authority
JP
Japan
Prior art keywords
gate
grown
injected
covered
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55137465A
Other languages
Japanese (ja)
Inventor
Isayoshi Sakai
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55137465A priority Critical patent/JPS5762565A/en
Publication of JPS5762565A publication Critical patent/JPS5762565A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Abstract

PURPOSE:To obtain a short channel high melting point metal gate CMOS transistor having desired threshold voltage and excellent charcteristics by using high melting point metal as the gate metal of a complementary insulated gate field effect transistor. CONSTITUTION:A P-well 102 is formed in an N type silicon substrate, an N-well 103 is further formed therein, and a field oxidized film 104 is grown in an inert region. Then, a gate oxidized film 105 is grown in the active region, and molybdenum 106 is covered thereon by a sputtering method. A gate electrode 107 is then formed by a photoetching method, arsenic ions are injected to the N-channel MOS transistor side to form source and drain diffused layer 108, boron ions are injected to the P-channel side to form a source and drain diffused layer 109. Subsequetly, an interlayer insulating film 110 is covered thereon, and an aluminum wire electrode 112 is formed.
JP55137465A 1980-10-01 1980-10-01 Semiconductor device Pending JPS5762565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55137465A JPS5762565A (en) 1980-10-01 1980-10-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55137465A JPS5762565A (en) 1980-10-01 1980-10-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5762565A true JPS5762565A (en) 1982-04-15

Family

ID=15199231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55137465A Pending JPS5762565A (en) 1980-10-01 1980-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762565A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965481A (en) * 1982-10-06 1984-04-13 Nec Corp Semiconductor device
JPS6362356A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917074A (en) * 1972-06-09 1974-02-15
JPS4927988A (en) * 1972-07-12 1974-03-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917074A (en) * 1972-06-09 1974-02-15
JPS4927988A (en) * 1972-07-12 1974-03-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965481A (en) * 1982-10-06 1984-04-13 Nec Corp Semiconductor device
JPH0586663B2 (en) * 1982-10-06 1993-12-13 Nippon Electric Co
JPS6362356A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

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