JPS57186348A - Master sliced large-scale integrated circuit - Google Patents

Master sliced large-scale integrated circuit

Info

Publication number
JPS57186348A
JPS57186348A JP6935081A JP6935081A JPS57186348A JP S57186348 A JPS57186348 A JP S57186348A JP 6935081 A JP6935081 A JP 6935081A JP 6935081 A JP6935081 A JP 6935081A JP S57186348 A JPS57186348 A JP S57186348A
Authority
JP
Japan
Prior art keywords
wiring
sections
miniaturized
cells
master
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6935081A
Other languages
Japanese (ja)
Inventor
Hideyuki Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP6935081A priority Critical patent/JPS57186348A/en
Publication of JPS57186348A publication Critical patent/JPS57186348A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a master sliced LSI, which can be miniaturized or density thereof can be increased, by widening the area of a wiring connecting section integrally formed with a gate electrode more than the connecting section of wiring at the outside of cells in each cell arranged in array-shaped form. CONSTITUTION:Connecting sections 4' integrally formed with gate electrodes 3 are considerably larger than the connecting sections 2 of the cells in areas, and consist of sections 4'a, 4'b, and only one sides of the sections 4'a, 4'b can also be used. Even when a plurality of input/output terminals are shaped at one sides of each cell, the positions of wiring 8 or 9 formed while being connected to the gate electrodes are varied and the wiring can be shaped in predetermined width and at prescribed intervals according to this constitution when the maximum number of posibility of which the terminals are used at the same time is the mumber of mounting or less. Accordingly, the size of cell themselves can be miniaturized, and LSI itself can be miniaturized or the degree of integration of the cells can be improved in the same area.
JP6935081A 1981-05-11 1981-05-11 Master sliced large-scale integrated circuit Pending JPS57186348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6935081A JPS57186348A (en) 1981-05-11 1981-05-11 Master sliced large-scale integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6935081A JPS57186348A (en) 1981-05-11 1981-05-11 Master sliced large-scale integrated circuit

Publications (1)

Publication Number Publication Date
JPS57186348A true JPS57186348A (en) 1982-11-16

Family

ID=13400014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6935081A Pending JPS57186348A (en) 1981-05-11 1981-05-11 Master sliced large-scale integrated circuit

Country Status (1)

Country Link
JP (1) JPS57186348A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352386A (en) * 1976-10-22 1978-05-12 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5582450A (en) * 1978-12-15 1980-06-21 Nec Corp Semiconductor integrated circuit
JPS5582448A (en) * 1978-12-15 1980-06-21 Nec Corp Master slice semiconductor integrated circuit
JPS57176756A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Complementary mos integrated circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352386A (en) * 1976-10-22 1978-05-12 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5582450A (en) * 1978-12-15 1980-06-21 Nec Corp Semiconductor integrated circuit
JPS5582448A (en) * 1978-12-15 1980-06-21 Nec Corp Master slice semiconductor integrated circuit
JPS57176756A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Complementary mos integrated circuit device

Similar Documents

Publication Publication Date Title
JPS5493375A (en) Semiconductor integrated circuit device
JPS5284987A (en) Voltage dividing circuit
KR890004879B1 (en) Master-slcie type semiconductor integrated circuit device
JPS57186348A (en) Master sliced large-scale integrated circuit
JPS57190343A (en) Semiconductor integrated circuit
JPS5471973A (en) Logical operation circuit
JPS57192061A (en) Semiconductor integrated circuit device
JPS55160392A (en) Semiconductor memory
JPS5759352A (en) Manufacture of integrated circuit
JPS6489537A (en) Lsi
JPS5299791A (en) Intergrated circuit
JPS5771589A (en) Memory exclusively used for read-out of semiconductor
JPS57196556A (en) Semiconductor integrated circuit device
JPS55151806A (en) Signal level control circuit
JPS5353281A (en) Semiconductor integrating circuit
JPS5616225A (en) Input selection circuit for microcomputer
JPS5555561A (en) Junction destructive programmable memory cell
JPS56150843A (en) Manufacture of lead frame and semiconductor using lead frame
JPS57136813A (en) Resistance branching circuit
JPS5755625A (en) Programmable logic array
JPS5763847A (en) Transistor circut
JPS5712559A (en) Junction type field effect semiconductor device
JPS55107256A (en) Iil integrated circuit device
JPS57133599A (en) Semiconductor memory device
JPS5522830A (en) Unit cell for logic lsi chip