JPS5284987A - Voltage dividing circuit - Google Patents

Voltage dividing circuit

Info

Publication number
JPS5284987A
JPS5284987A JP78076A JP78076A JPS5284987A JP S5284987 A JPS5284987 A JP S5284987A JP 78076 A JP78076 A JP 78076A JP 78076 A JP78076 A JP 78076A JP S5284987 A JPS5284987 A JP S5284987A
Authority
JP
Japan
Prior art keywords
voltage dividing
dividing circuit
cubstrate
ffts
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP78076A
Other languages
Japanese (ja)
Other versions
JPS5931863B2 (en
Inventor
Shuichi Torii
Tamotsu Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51000780A priority Critical patent/JPS5931863B2/en
Priority to US05/756,866 priority patent/US4152716A/en
Publication of JPS5284987A publication Critical patent/JPS5284987A/en
Publication of JPS5931863B2 publication Critical patent/JPS5931863B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

PURPOSE: Stable voltage divide outputs are obtained by connecting in series a plurality of FFTs of the same conductivity type between first and second power supply voltage terminals, short-connecting the source of each FET and its cubstrate, gate and drain respectively, and drawing the output from each connection point of respective FETs.
COPYRIGHT: (C)1977,JPO&Japio
JP51000780A 1976-01-07 1976-01-07 voltage output circuit Expired JPS5931863B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP51000780A JPS5931863B2 (en) 1976-01-07 1976-01-07 voltage output circuit
US05/756,866 US4152716A (en) 1976-01-07 1977-01-04 Voltage dividing circuit in IC structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51000780A JPS5931863B2 (en) 1976-01-07 1976-01-07 voltage output circuit

Publications (2)

Publication Number Publication Date
JPS5284987A true JPS5284987A (en) 1977-07-14
JPS5931863B2 JPS5931863B2 (en) 1984-08-04

Family

ID=11483201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51000780A Expired JPS5931863B2 (en) 1976-01-07 1976-01-07 voltage output circuit

Country Status (2)

Country Link
US (1) US4152716A (en)
JP (1) JPS5931863B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114981A (en) * 1978-02-27 1979-09-07 Nec Corp Zener semiconductor device
JPS6152017A (en) * 1984-08-22 1986-03-14 Nec Ic Microcomput Syst Ltd Voltage division circuit

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply
US4260946A (en) * 1979-03-22 1981-04-07 Rca Corporation Reference voltage circuit using nested diode means
US4298811A (en) * 1979-07-20 1981-11-03 Signetics Corporation MOS Voltage divider
DE3002894C2 (en) * 1980-01-28 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Monolithically integrated semiconductor circuit with transistors
DE3026361A1 (en) * 1980-07-11 1982-02-04 Siemens AG, 1000 Berlin und 8000 München ELECTRICAL RESISTANCE FOR INTEGRATED SEMICONDUCTOR CIRCUITS MADE OF AT LEAST TWO MONOLITICALLY SUMMARY MIS FIELD EFFECT TRANSISTORS
US4390833A (en) * 1981-05-22 1983-06-28 Rockwell International Corporation Voltage regulator circuit
JPS58151124A (en) * 1982-03-04 1983-09-08 Ricoh Co Ltd Level converting circuit
DE3379009D1 (en) * 1982-10-18 1989-02-23 Philips Nv Semiconductor structure having a voltage level shifter
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
US4857984A (en) * 1984-12-26 1989-08-15 Hughes Aircraft Company Three-terminal MOS integrated circuit switch
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
US5010385A (en) * 1990-03-30 1991-04-23 The United States Of America As Represented By The Secretary Of The Navy Resistive element using depletion-mode MOSFET's
US5990754A (en) * 1997-06-20 1999-11-23 Citizen Watch Co., Ltd. Phase and base potential converter and temperature-compensated crystal oscillator having the same
US6496051B1 (en) * 2001-09-06 2002-12-17 Sharp Laboratories Of America, Inc. Output sense amplifier for a multibit memory cell
US8232627B2 (en) * 2009-09-21 2012-07-31 International Business Machines Corporation Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device
US8471344B2 (en) * 2009-09-21 2013-06-25 International Business Machines Corporation Integrated circuit device with series-connected fin-type field effect transistors and integrated voltage equalization and method of forming the device
US9813056B2 (en) 2015-09-21 2017-11-07 Analog Devices Global Active device divider circuit with adjustable IQ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2143553B1 (en) * 1971-06-29 1974-05-31 Sescosem
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
US3946327A (en) * 1974-10-23 1976-03-23 Rca Corporation Amplifier employing complementary field-effect transistors
US3996482A (en) * 1975-05-09 1976-12-07 Ncr Corporation One shot multivibrator circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114981A (en) * 1978-02-27 1979-09-07 Nec Corp Zener semiconductor device
JPS6152017A (en) * 1984-08-22 1986-03-14 Nec Ic Microcomput Syst Ltd Voltage division circuit

Also Published As

Publication number Publication date
JPS5931863B2 (en) 1984-08-04
US4152716A (en) 1979-05-01

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