JPS57190343A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57190343A
JPS57190343A JP7495781A JP7495781A JPS57190343A JP S57190343 A JPS57190343 A JP S57190343A JP 7495781 A JP7495781 A JP 7495781A JP 7495781 A JP7495781 A JP 7495781A JP S57190343 A JPS57190343 A JP S57190343A
Authority
JP
Japan
Prior art keywords
reserve
block
circuit
elements
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7495781A
Other languages
Japanese (ja)
Other versions
JPH0348669B2 (en
Inventor
Masao Kato
Hidekazu Minami
Akira Ishiyama
Takahiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7495781A priority Critical patent/JPS57190343A/en
Publication of JPS57190343A publication Critical patent/JPS57190343A/en
Publication of JPH0348669B2 publication Critical patent/JPH0348669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits

Abstract

PURPOSE:To facilitate to change a circuit at an LSI of which circuit elements of a large number arranged in order on a semiconductor chip are connected mutually by a method wherein a part of the elements are made to be held in reserve, and the reserve elements are connected mutually. CONSTITUTION:The reserve cells 12 of the plural number being mixed in cell IC's already used are made to lie scattered at the voluntary positions of the voluntary cell lines 9 in an LSI block 2, and between mutual terminals of the reserve cells 12 and between the reserve cell 12 and a terminal 13 for reserve block are connected mutually in the same way with the regular wiring using the first layer wiring 5 and the second layer wiring 6. Moreover the block terminal 13 is connected similarly to a reserve block terminal of another block. By this constitution, even when a circuit is to be changed at the middle of manufacture, because it can be attained only by changing the wiring, it can be attained extremely economically.
JP7495781A 1981-05-20 1981-05-20 Semiconductor integrated circuit Granted JPS57190343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7495781A JPS57190343A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7495781A JPS57190343A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57190343A true JPS57190343A (en) 1982-11-22
JPH0348669B2 JPH0348669B2 (en) 1991-07-25

Family

ID=13562302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7495781A Granted JPS57190343A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57190343A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052040A (en) * 1983-08-31 1985-03-23 Hitachi Ltd Semiconductor integrated circuit
JPS60110136A (en) * 1983-11-21 1985-06-15 Hitachi Ltd Cmos arithmetic circuitry
US4716452A (en) * 1984-11-09 1987-12-29 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device constructed by polycell technique
JPS63215052A (en) * 1987-03-04 1988-09-07 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS63241952A (en) * 1987-03-30 1988-10-07 Toshiba Corp Semiconductor device
JPS6442146A (en) * 1987-08-08 1989-02-14 Toshiba Corp Semiconductor integrated circuit
JPH02264455A (en) * 1989-04-05 1990-10-29 Seiko Epson Corp Semiconductor device
EP1026736A1 (en) * 1997-03-11 2000-08-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device with its layout designed by the cell base method
US6274934B1 (en) 1999-07-26 2001-08-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052040A (en) * 1983-08-31 1985-03-23 Hitachi Ltd Semiconductor integrated circuit
JPS60110136A (en) * 1983-11-21 1985-06-15 Hitachi Ltd Cmos arithmetic circuitry
US4716452A (en) * 1984-11-09 1987-12-29 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device constructed by polycell technique
JPS63215052A (en) * 1987-03-04 1988-09-07 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS63241952A (en) * 1987-03-30 1988-10-07 Toshiba Corp Semiconductor device
JPS6442146A (en) * 1987-08-08 1989-02-14 Toshiba Corp Semiconductor integrated circuit
JPH02264455A (en) * 1989-04-05 1990-10-29 Seiko Epson Corp Semiconductor device
EP1026736A1 (en) * 1997-03-11 2000-08-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device with its layout designed by the cell base method
EP1026736A4 (en) * 1997-03-11 2002-03-20 Mitsubishi Electric Corp Semiconductor integrated circuit device with its layout designed by the cell base method
US6274934B1 (en) 1999-07-26 2001-08-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing thereof

Also Published As

Publication number Publication date
JPH0348669B2 (en) 1991-07-25

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