JPS6442146A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6442146A
JPS6442146A JP19729787A JP19729787A JPS6442146A JP S6442146 A JPS6442146 A JP S6442146A JP 19729787 A JP19729787 A JP 19729787A JP 19729787 A JP19729787 A JP 19729787A JP S6442146 A JPS6442146 A JP S6442146A
Authority
JP
Japan
Prior art keywords
cell
wiring
wiring part
buffer
logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19729787A
Other languages
Japanese (ja)
Other versions
JP2693448B2 (en
Inventor
Sachiko Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62197297A priority Critical patent/JP2693448B2/en
Publication of JPS6442146A publication Critical patent/JPS6442146A/en
Application granted granted Critical
Publication of JP2693448B2 publication Critical patent/JP2693448B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures

Abstract

PURPOSE:To increase an operation speed by shortening a length of a wiring part and to prevent a corruption of a waveform of a signal by replacing a through cell with a buffer if the occasion arises. CONSTITUTION:In a logic circuit where a logic gate region is formed by automatically arranging a beforehand prepared logic cell and said logic cell is designed by executing an automatic wiring operation by using a wiring region, a through cell where a wiring part 1 connecting logic cells 2 and 3 crossing a chip is passed is replaced with a buffer 4. The wiring part is divided into wiring parts 11 and 12 by using the buffer 4. Even when the wiring part does not pass the through cell near a point where the wiring part to be divided is to be divided, the through cell near the point is replaced by a buffer cell and the wiring parts are connected; by this setup, a length of the wiring part can be shortened; it is possible to prevent a delay in a signal and a corruption of a waveform of the signal which are cause because the length of the wiring part is too long.
JP62197297A 1987-08-08 1987-08-08 Semiconductor integrated circuit Expired - Lifetime JP2693448B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197297A JP2693448B2 (en) 1987-08-08 1987-08-08 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197297A JP2693448B2 (en) 1987-08-08 1987-08-08 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6442146A true JPS6442146A (en) 1989-02-14
JP2693448B2 JP2693448B2 (en) 1997-12-24

Family

ID=16372118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197297A Expired - Lifetime JP2693448B2 (en) 1987-08-08 1987-08-08 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2693448B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212107A (en) * 1991-01-31 1993-05-18 Hitachi, Ltd. Wiring method for semiconductor integrated circuits
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US8026537B2 (en) 2003-01-20 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having an oblique global signal wiring and semiconductor integrated circuit wiring method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190343A (en) * 1981-05-20 1982-11-22 Hitachi Ltd Semiconductor integrated circuit
JPS6261343A (en) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62140430A (en) * 1985-12-16 1987-06-24 Toshiba Corp Wiring method for semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190343A (en) * 1981-05-20 1982-11-22 Hitachi Ltd Semiconductor integrated circuit
JPS6261343A (en) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62140430A (en) * 1985-12-16 1987-06-24 Toshiba Corp Wiring method for semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212107A (en) * 1991-01-31 1993-05-18 Hitachi, Ltd. Wiring method for semiconductor integrated circuits
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US8026537B2 (en) 2003-01-20 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having an oblique global signal wiring and semiconductor integrated circuit wiring method

Also Published As

Publication number Publication date
JP2693448B2 (en) 1997-12-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term