JPS57183048A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57183048A
JPS57183048A JP56066918A JP6691881A JPS57183048A JP S57183048 A JPS57183048 A JP S57183048A JP 56066918 A JP56066918 A JP 56066918A JP 6691881 A JP6691881 A JP 6691881A JP S57183048 A JPS57183048 A JP S57183048A
Authority
JP
Japan
Prior art keywords
reference cells
rows
wirings
axial direction
type mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56066918A
Other languages
Japanese (ja)
Other versions
JPH0120539B2 (en
Inventor
Yoji Nishio
Keisuke Nakajima
Michihiro Ikeda
Nagaharu Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Engineering Co Ltd
Priority to JP56066918A priority Critical patent/JPS57183048A/en
Publication of JPS57183048A publication Critical patent/JPS57183048A/en
Publication of JPH0120539B2 publication Critical patent/JPH0120539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture the master slice LSI with the high functional integration by a method wherein the specified circuit elements may be formed as necessary between each of the rows of the arbitrary reference cells. CONSTITUTION:The multiple reference cells 2 comprising two pairs of P type and N type MOS transistors are jointly provided on one of the main surface sides of the semiconductor substrate in the X axial direction forming the rows of reference cells, while the plural rows of reference cells are also jointly provided at the specified interval in the y axial direction. Then two each of the N channel type MOS transistor 120 per row of reference cell are formed. The resistors may be constituted efficiently by means of changing the first and the second wirings as well as the master for contact hole connecting the wirings in accordance with the user's demand in the formation so far mentioned.
JP56066918A 1981-05-06 1981-05-06 Semiconductor integrated circuit device Granted JPS57183048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56066918A JPS57183048A (en) 1981-05-06 1981-05-06 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066918A JPS57183048A (en) 1981-05-06 1981-05-06 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57183048A true JPS57183048A (en) 1982-11-11
JPH0120539B2 JPH0120539B2 (en) 1989-04-17

Family

ID=13329830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066918A Granted JPS57183048A (en) 1981-05-06 1981-05-06 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57183048A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119647A (en) * 1982-01-09 1983-07-16 Ricoh Co Ltd Lsi master slice chip
JPS58139446A (en) * 1982-02-15 1983-08-18 Nec Corp Semiconductor integrated circuit device
JPS59181028A (en) * 1983-03-30 1984-10-15 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device
JPS59182540A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Design for wiring pattern at semiconductor device
JPS6025251A (en) * 1983-07-20 1985-02-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS6064447A (en) * 1983-09-19 1985-04-13 Fujitsu Ltd Gate array type integrated circuit
JPS60175438A (en) * 1984-02-22 1985-09-09 Hitachi Ltd Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966081A (en) * 1972-10-27 1974-06-26
JPS4965787A (en) * 1972-10-27 1974-06-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966081A (en) * 1972-10-27 1974-06-26
JPS4965787A (en) * 1972-10-27 1974-06-26

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119647A (en) * 1982-01-09 1983-07-16 Ricoh Co Ltd Lsi master slice chip
JPS58139446A (en) * 1982-02-15 1983-08-18 Nec Corp Semiconductor integrated circuit device
JPH0243349B2 (en) * 1982-02-15 1990-09-28
JPS59181028A (en) * 1983-03-30 1984-10-15 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device
JPH0470783B2 (en) * 1983-03-30 1992-11-11 Nippon Denki Aishii Maikon Shisutemu Kk
JPS59182540A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Design for wiring pattern at semiconductor device
JPH0479144B2 (en) * 1983-04-01 1992-12-15 Hitachi Ltd
JPS6025251A (en) * 1983-07-20 1985-02-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0568862B2 (en) * 1983-07-20 1993-09-29 Mitsubishi Electric Corp
JPS6064447A (en) * 1983-09-19 1985-04-13 Fujitsu Ltd Gate array type integrated circuit
JPS60175438A (en) * 1984-02-22 1985-09-09 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH0120539B2 (en) 1989-04-17

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