JPS57192061A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57192061A
JPS57192061A JP7646781A JP7646781A JPS57192061A JP S57192061 A JPS57192061 A JP S57192061A JP 7646781 A JP7646781 A JP 7646781A JP 7646781 A JP7646781 A JP 7646781A JP S57192061 A JPS57192061 A JP S57192061A
Authority
JP
Japan
Prior art keywords
wiring
blocks
basic
channel regions
basic cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7646781A
Other languages
Japanese (ja)
Inventor
Masao Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP7646781A priority Critical patent/JPS57192061A/en
Publication of JPS57192061A publication Critical patent/JPS57192061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Abstract

PURPOSE:To improve the density of integration by dividing basic cell groups into a plurality of blocks, and providing a wiring area broader than the interval between the neighboring basic cells in each block. CONSTITUTION:In a basic cell arranged in a master slice LSI, an LSI chip 4, the CMOS basic cells 5, basic cell assembly blocks 6, intrablock wiring channel regions 7, and interblock wiring channel regions 8 are provided. The area 7 which can pass only the intrablock wiring is provided in the block. Therefore the interval between the basic cells can be shortened. Meanwhile, the region 8 for accommodating the interblock wiring is provided between the blocks so as to pass a long wiring 20 in precedence. Since the basic cells are arranged in the blocks and the wiring channels are provided in two layers, the wiring channel regions as the entire LSI can be reduced.
JP7646781A 1981-05-22 1981-05-22 Semiconductor integrated circuit device Pending JPS57192061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7646781A JPS57192061A (en) 1981-05-22 1981-05-22 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7646781A JPS57192061A (en) 1981-05-22 1981-05-22 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57192061A true JPS57192061A (en) 1982-11-26

Family

ID=13605966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7646781A Pending JPS57192061A (en) 1981-05-22 1981-05-22 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57192061A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832445A (en) * 1981-08-20 1983-02-25 Nec Corp Integrated circuit device and manufacture thereof
JPS58137229A (en) * 1982-02-09 1983-08-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5954239A (en) * 1982-09-22 1984-03-29 Toshiba Corp Semiconductor integrated circuit device
JPS59107537A (en) * 1982-12-13 1984-06-21 Nec Corp Master slice type integrated circuit group
WO1986000468A1 (en) * 1984-06-29 1986-01-16 Hughes Aircraft Company Hierarchical configurable gate array
US4688072A (en) * 1984-06-29 1987-08-18 Hughes Aircraft Company Hierarchical configurable gate array
JPH02194649A (en) * 1989-01-24 1990-08-01 Fujitsu Ltd Master-slice-type integrated circuit device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832445A (en) * 1981-08-20 1983-02-25 Nec Corp Integrated circuit device and manufacture thereof
JPS58137229A (en) * 1982-02-09 1983-08-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPH0114704B2 (en) * 1982-02-09 1989-03-14 Nippon Telegraph & Telephone
JPS5954239A (en) * 1982-09-22 1984-03-29 Toshiba Corp Semiconductor integrated circuit device
JPH023549B2 (en) * 1982-09-22 1990-01-24 Tokyo Shibaura Electric Co
JPS59107537A (en) * 1982-12-13 1984-06-21 Nec Corp Master slice type integrated circuit group
JPH0125225B2 (en) * 1982-12-13 1989-05-16 Nippon Electric Co
WO1986000468A1 (en) * 1984-06-29 1986-01-16 Hughes Aircraft Company Hierarchical configurable gate array
JPS61502574A (en) * 1984-06-29 1986-11-06 ヒユ−ズ・エアクラフト・カンパニ− Hierarchical gate array
US4688072A (en) * 1984-06-29 1987-08-18 Hughes Aircraft Company Hierarchical configurable gate array
JPH02194649A (en) * 1989-01-24 1990-08-01 Fujitsu Ltd Master-slice-type integrated circuit device

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