JPH02264455A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02264455A JPH02264455A JP8592889A JP8592889A JPH02264455A JP H02264455 A JPH02264455 A JP H02264455A JP 8592889 A JP8592889 A JP 8592889A JP 8592889 A JP8592889 A JP 8592889A JP H02264455 A JPH02264455 A JP H02264455A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- active element
- spare
- active
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000006870 function Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract 5
- 230000004048 modification Effects 0.000 abstract 5
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野1 本発明は半導体装置に関する。[Detailed description of the invention] [Industrial application field 1 The present invention relates to a semiconductor device.
【発明の概要J
本発明は各種論理機能を有する能動素子を列状に形成し
た?!数の能動素子領域と、該能動素子の入出力間を相
互に接続する配線領域とからなる半導体集積装置におい
て、該能動素子領域内に予備能動素子群からなる予備能
動素子領域を複数配置し、予備能動素子領域間を相互に
接続する配線を前記配線領域に有することにより、回路
変更時での配線領域を確保し大幅なレイアウト変更によ
るさまざまな設計負荷を減少し更に直接回路変更と無関
係の機能ブロックの特性の変化を防止するものである。[Summary of the Invention J] In the present invention, active elements having various logical functions are formed in a row? ! In a semiconductor integrated device comprising a number of active element regions and a wiring region interconnecting inputs and outputs of the active elements, a plurality of preliminary active element regions each consisting of a group of preliminary active elements are arranged within the active element region, By having wiring in the wiring area that connects the spare active element areas to each other, the wiring area is secured when changing the circuit, reducing various design loads caused by major layout changes, and further improving functions that are not directly related to circuit changes. This prevents changes in block characteristics.
【従来の技術)
従来の各種論理機能を有する能動素子を列状に形成した
複数の能動素子領域と、該能動素子の入出力間を相互に
接続する配線領域とからなる半導体集積装置においては
、実際に論理的に使用しない能動素子を予備能動素子と
してさまざまな目的の為に配置してきている。その目的
の代表的な例は、試作評価後の回路の不具合による回路
変更に短納期で対処するため、またマスタースライス的
に一部の回路変更により、別の半導体装置を作成するた
め等である。このため適当な領域に予備能動素子群を配
置し、トランジスタ領域を確保し必要に応じて配線層の
みを変更していた。[Prior Art] In a conventional semiconductor integrated device comprising a plurality of active element regions in which active elements having various logical functions are formed in rows, and a wiring region interconnecting inputs and outputs of the active elements, Active elements that are not actually logically used have been placed as spare active elements for various purposes. Typical examples of this purpose are to respond to circuit changes due to circuit defects after prototype evaluation in a short delivery time, and to create another semiconductor device by changing part of the circuit as a master slice. . For this purpose, a preliminary active element group is placed in an appropriate area, a transistor area is secured, and only the wiring layer is changed as necessary.
〔発明が解決しようとする課題]
近年半導体装置レイアウト工程において、能動素子の配
置および配線を自動で行ういわゆる自動配置配線プログ
ラムを使用することが主となってきている。ここで上記
プログラムが進歩するにつれ配線効率があがり、配線領
域での無駄な領域が著しく減少してきている。この為予
備能動素子のみをいれておいても実際に使用するための
配線領域の変更は著しく困難になってきている。[Problems to be Solved by the Invention] In recent years, in the semiconductor device layout process, so-called automatic placement and wiring programs that automatically perform the placement and wiring of active elements have become mainly used. As the above-mentioned program progresses, the wiring efficiency increases, and the wasted area in the wiring area is significantly reduced. For this reason, even if only preliminary active elements are included, it has become extremely difficult to change the wiring area for actual use.
第4図に従来での実施例の構成図を示す。FIG. 4 shows a configuration diagram of a conventional embodiment.
11.12.13.14.15.16は論理的な有効な
能動素子であり、ハツチングで示す60.61.62.
63.64.65は予備能動素子群である。一般に予備
能動素子群は、レイアウト後工程で配置されるため、能
動素子列の右または左端におかれることが多い、111
,112.113,114は有効能動素子間の配線であ
る。また実際の半導体装置にはその他に電源配線、外部
との信号のインターフェースとしてのIOセル等がある
がここではすべて省略する。予備能動素子部分には、配
線がされていない為、配線領域は論理的に有効な配線で
のみ必要なスペースしか確保されないことになり、前述
の様に後で予備能動素子間を配線しようとするのは著し
く困難となる。この為予備能動素子を配線しようとする
と、既に配線された有効配線の変更もしくは有効な能動
素子自体の位置をも移動せざるをえなくなり配線容量の
変化等により、特性が変化し動作不良の原因ともなりか
ねない。11.12.13.14.15.16 are logical valid active elements, and 60.61.62.16 are indicated by hatching.
63, 64, and 65 are preliminary active element groups. In general, the preliminary active element group is arranged in a post-layout process, so it is often placed at the right or left end of the active element row.
, 112, 113, and 114 are wirings between effective active elements. In addition, an actual semiconductor device includes power supply wiring, an IO cell as an interface for signals with the outside, etc., but these are all omitted here. Since there is no wiring in the spare active element part, the wiring area will only have the necessary space for logically valid wiring, and as mentioned above, wiring between the spare active elements will be attempted later. becomes extremely difficult. For this reason, if you try to wire a spare active element, you will have to change the active wiring that has already been routed or move the position of the effective active element itself, and due to changes in wiring capacitance, etc., the characteristics will change and cause malfunction. It could also be the case.
【課題を解決するための手段J
本発明の半導体集積装置においては、該能動素子領域内
に予備能動素子群からなる予備能動素子領域を複数配置
し、本来の能動素子間の配線を自動配線する際に同時に
予備能動素子領域間を相互に接続する配線を自動配線す
ることにより前記配線領域に実際に有効な配線と予備配
線とを配置することを特徴とする。またここで予備能動
素子とは配線領域に対比しての意味で能動素子と表現し
ているため広範囲にはプルアップまたはプルダウン素子
のようなトランジスタを含まない領域でも能動素子領域
と同一の列状に配置されるものはすべて含むものとする
。同様に能動素子領域に配置されるストッパー領域(拡
散領域)も含むものとする。[Means for Solving the Problems J] In the semiconductor integrated device of the present invention, a plurality of spare active element areas each consisting of a group of spare active elements are arranged within the active element area, and wiring between original active elements is automatically routed. At the same time, actually effective wiring and preliminary wiring are placed in the wiring area by automatically wiring wiring that interconnects the preliminary active element areas. In addition, here, spare active elements are expressed as active elements in the sense of contrasting with wiring areas, so even in areas that do not include transistors such as pull-up or pull-down elements, they can be arranged in the same row as the active element area. This shall include everything located in. Similarly, a stopper region (diffusion region) disposed in the active element region is also included.
〔実 施 例1 第1図は本発明での実施例での構成図である。[Implementation example 1] FIG. 1 is a block diagram of an embodiment of the present invention.
l、2.3.4.5.6は論理的に有効な能動素子であ
る。50.51.52.53.54.55は予備能動素
子群であり、おのおのの予備能動素子群は内部に一つあ
るいは複数の能動素子を含んでいる。ここでは、予備能
動素子群は能動素子を列状に配置した両端に置かれてい
る。101,102.103,104は通常の有効能動
素子間の配線を示す、201.202.203は本発明
での予備能動素子群間の配線を示す、203は同一能動
素子列上で配線した例であり、201,202は、異な
る能動素子列での配線例である。201.202は横方
向での配線スペースのみでなく有効能動素子内部の配線
可能な領域も使用し縦方向での配線スペースも確保して
いる。l, 2.3.4.5.6 are logically valid active elements. 50, 51, 52, 53, 54, 55 are preliminary active element groups, and each preliminary active element group includes one or more active elements therein. Here, the preliminary active element groups are placed at both ends of the array of active elements. 101, 102, 103, 104 show wiring between normal effective active elements, 201, 202, 203 show wiring between spare active element groups in the present invention, 203 shows an example of wiring on the same active element column 201 and 202 are examples of wiring in different active element columns. 201 and 202 use not only the wiring space in the horizontal direction but also the wiring possible area inside the effective active element to secure the wiring space in the vertical direction.
第2図は、本発明での別の実施例での構成図である。7
.8は論理的に有効な能動素子であり、9は、論理的に
有効なメモリ等のブロックセルである。56.57.5
8は第1図と同様な予備能動素子群であり、205は5
6の予備能動素子群と9の有効なブロックセルの無効入
出力との間の予備配線である。このように本発明の方法
は、配線スペースを確保するために、有効なブロックセ
ルに仮の入出力端子を設定し、配線しておくことにも応
用できる。また、105は有効能動素子と有効なブロッ
クセル入出力との配線である。204は第1図と同様な
予備能動素子群間の予備配線である。FIG. 2 is a block diagram of another embodiment of the present invention. 7
.. 8 is a logically effective active element, and 9 is a logically effective block cell such as a memory. 56.57.5
8 is a preliminary active element group similar to that in FIG. 1, and 205 is a group of 5
This is a spare wiring between the 6 spare active element groups and the invalid input/output of the 9 valid block cells. In this way, the method of the present invention can also be applied to setting temporary input/output terminals in valid block cells and wiring them in order to secure wiring space. Further, 105 is wiring between effective active elements and effective block cell input/output. Reference numeral 204 denotes a preliminary wiring between preliminary active element groups similar to that shown in FIG.
第3図は本発明での予備能動素子群の実施例であり、破
線で囲まれた300.301.302.303は予備能
動素子群の各セルであり、具体的には300はプルアッ
プ抵抗、301はNANDゲート、302はリセット付
きフリップフ口ツプ回路、303はバッファーであり能
動素子としては一般的なものである。401.402は
予備能動素子間を接続する配線である。ここで注目すべ
き点は302の様な二安定回路でもリセット端子をアク
ティブにしておくことにより予備能動素子群間の配線の
みで内部状態が一義的に定まり電流的にも安定でありま
た信願性的にもなんら問題はないことである。従来の予
備能動素子を配置する方法では入力ゲートが浮いてしま
い不安定となりこれを防止するため能動素子セル内部で
電源間の通路となる配線を切断しておく必要があった0
本発明の方法では入力ゲートを固定することができ面倒
なセル内の加工も不要である。また本発明での実施例で
ある第1図との対応をしてみると52.53の予備能動
素子群が300.301゜302.303の予備能動素
子に相当し一例として52に300を、また53に30
1,302゜303の予備能動素子群を対応させた場合
は、第1図の予備配線203が第3図の401に対応す
る。402,403は53の同−予備能動素子群内での
配線となる。第1図ではこの同−予備能動素子群内での
配線は図に示していないがこの配線も予備配線として配
線領域のスペースを確保することができる。FIG. 3 shows an embodiment of the preliminary active element group according to the present invention, and 300, 301, 302, and 303 surrounded by broken lines are each cell of the preliminary active element group, and specifically, 300 is a pull-up resistor. , 301 is a NAND gate, 302 is a flip-flop circuit with reset, and 303 is a buffer, which are common active elements. 401 and 402 are wirings that connect the preliminary active elements. What should be noted here is that even in a bistable circuit like the 302, by keeping the reset terminal active, the internal state is uniquely determined just by the wiring between the preliminary active element groups, and the current is stable. There is no problem with sexuality either. In the conventional method of arranging spare active elements, the input gate would float and become unstable, and to prevent this, it was necessary to cut the wiring that serves as a path between the power supplies inside the active element cell.
In the method of the present invention, the input gate can be fixed, and troublesome processing inside the cell is not required. Also, in relation to FIG. 1 which is an embodiment of the present invention, the preliminary active element group of 52.53 corresponds to the preliminary active elements of 300.301° and 302.303, and as an example, 52 and 300 are 30 to 53 again
When 1,302.degree. 303 preliminary active element groups are made to correspond, the preliminary wiring 203 in FIG. 1 corresponds to 401 in FIG. 3. 402 and 403 are wiring lines within the 53 spare active element groups. In FIG. 1, the wiring within this spare active element group is not shown, but this wiring can also be used as a spare wiring to secure a space in the wiring area.
〔発明の効果1
以上述べたように本発明の上記の構成によれば予備能動
素子領域間を相互に接続する配線を前記配線領域に有す
ることにより、回路変更時での配線領域を確保しである
ため、回路変更に伴う大幅なレイアウト変更によるさま
ざまな設計負荷を減少し、配線層のみのスムーズな変更
により短納期に対処することも可能であり、更に直接回
路変更部分と無関係の機能ブロックの特性の変化を防止
する効果を有する。[Effects of the Invention 1 As described above, according to the above structure of the present invention, by providing the wiring that connects the spare active element regions to each other in the wiring region, it is possible to secure the wiring area when changing the circuit. Therefore, it is possible to reduce various design burdens caused by major layout changes associated with circuit changes, and to shorten delivery times by smoothly changing only the wiring layer.Furthermore, it is possible to reduce the design burden caused by major layout changes associated with circuit changes, and to shorten delivery times by smoothly changing only the wiring layer. It has the effect of preventing changes in characteristics.
第1図は本発明での実施例での構成図。 第2図は本発明での別の実施例での構成図。 第3図は本発明での予備能動素子群の実施例図。 第4図は従来の実施例での構成図。 以上 出願人 セイコーエプソン株式会社 代理人 弁理士 鈴 木 喜三部(他1名)劃団 FIG. 1 is a configuration diagram of an embodiment of the present invention. FIG. 2 is a configuration diagram of another embodiment of the present invention. FIG. 3 is an embodiment diagram of a preliminary active element group according to the present invention. FIG. 4 is a configuration diagram of a conventional embodiment. that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Suzuki (and 1 other person) Group
Claims (1)
能動素子領域と、該能動素子の入出力間を相互に接続す
る配線領域とからなる半導体集積装置において、該能動
素子領域内に予備能動素子群からなる予備能動素子領域
を複数配置し、予備能動素子領域間を相互に接続する配
線を、前記配線領域に有することを特徴とする半導体装
置。In a semiconductor integrated device consisting of a plurality of active element regions in which active elements having various logical functions are formed in rows, and a wiring region that interconnects inputs and outputs of the active elements, there is a pre-active element region within the active element region. 1. A semiconductor device, wherein a plurality of preliminary active element regions each consisting of a group of elements are arranged, and the wiring region has wiring for interconnecting the preliminary active element regions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1085928A JP2757445B2 (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1085928A JP2757445B2 (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02264455A true JPH02264455A (en) | 1990-10-29 |
JP2757445B2 JP2757445B2 (en) | 1998-05-25 |
Family
ID=13872417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1085928A Expired - Fee Related JP2757445B2 (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2757445B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274934B1 (en) | 1999-07-26 | 2001-08-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing thereof |
JP2007234857A (en) * | 2006-03-01 | 2007-09-13 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit, and designing method of semiconductor integrated circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190343A (en) * | 1981-05-20 | 1982-11-22 | Hitachi Ltd | Semiconductor integrated circuit |
JPS6481340A (en) * | 1987-09-24 | 1989-03-27 | Nippon Electric Ic Microcomput | Semiconductor integrated circuit device |
-
1989
- 1989-04-05 JP JP1085928A patent/JP2757445B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190343A (en) * | 1981-05-20 | 1982-11-22 | Hitachi Ltd | Semiconductor integrated circuit |
JPS6481340A (en) * | 1987-09-24 | 1989-03-27 | Nippon Electric Ic Microcomput | Semiconductor integrated circuit device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274934B1 (en) | 1999-07-26 | 2001-08-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing thereof |
JP2007234857A (en) * | 2006-03-01 | 2007-09-13 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit, and designing method of semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JP2757445B2 (en) | 1998-05-25 |
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