JPH01152642A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH01152642A
JPH01152642A JP62312831A JP31283187A JPH01152642A JP H01152642 A JPH01152642 A JP H01152642A JP 62312831 A JP62312831 A JP 62312831A JP 31283187 A JP31283187 A JP 31283187A JP H01152642 A JPH01152642 A JP H01152642A
Authority
JP
Japan
Prior art keywords
power supply
area
main power
logic circuit
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62312831A
Other languages
Japanese (ja)
Inventor
Sadaji Tasai
太細 貞治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62312831A priority Critical patent/JPH01152642A/en
Publication of JPH01152642A publication Critical patent/JPH01152642A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To improve the characteristic of delay time of signal propagation produced owing to capacitance and resistance of a signal wiring by providing logical circuit forming regions, each of which comprises a plurality of rows and columns with use of main power supply buses formed in the shape of a lattice, and providing an assembly cell region including groups of transistors and resistors enough to form each logical circuit. CONSTITUTION:Main power supply buses 2 are provided in the shape of a lattice on one principal surface of a semiconductor chip 1. Logical circuit forming regions are provided, which are partitioned in the form of a matrix with used of the main power supply buses 2. Further, an assembly cell region 3, which includes transistors and resistors for forming the logical circuits, is formed on the center of the logical circuit forming region. And, a signal connecting wiring region 4 of the assembly cell region 3 is formed on the outer periphery of the assembly cell region 3 of the logical circuit forming region. The semiconductor chip 1 is adapted to included on the peripheral edge thereof a power supply and an input/output signal connecting pad 5, further including an output gate element 6 adjoining to the main power supply bus 2 on the inner periphery of the pad 5.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に関し、特にマスタースライス
方式の半導体集積回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a master slice type semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

従来、この種のマスタースライス方式の半導体集積回路
は、第5図にその一例を示すように、半導体チップ1の
中央に論理回路セルフを行列状に配列して設け、論理回
路セルフを配置した行(又は列)の間にセル間配線領域
8を設け、半導体チップ1の周縁部に電源及び入出力信
号接続用パッド5を配列して設け、論理回路セルフとパ
ッド5との間の領域に外部出力用ゲート素子6を配列し
て設けている。
Conventionally, in this type of master slice type semiconductor integrated circuit, as shown in FIG. An intercell wiring area 8 is provided between the (or columns), power supply and input/output signal connection pads 5 are arranged and provided on the periphery of the semiconductor chip 1, and external wiring is provided in the area between the logic circuit self and the pads 5. Output gate elements 6 are arranged and provided.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体集積回路は、搭載されるセルの数
が増大するとともに、電気的特性の制約によりそれぞれ
のセルへの電圧印加のための電源配線を太くしなければ
ならないため、セル寸法がより大きくなる傾向があった
。また、搭載される論理回路の規模が大きくなるにつれ
て、それらを構成するセルの配置に関し、配置位置がよ
り広い領域にわたってくるので、それらのセル間配線長
が益々増大して信号配線の形成用領域を広く必要とし一
1当該信号配線の配線容量が増大し、更に、微細化に伴
ない配線抵抗が増大し、遅延時間特性が劣化するという
欠点があった。
In the conventional semiconductor integrated circuit described above, as the number of mounted cells increases, the power supply wiring for applying voltage to each cell must be made thicker due to restrictions on electrical characteristics, so the cell size becomes smaller. It tended to get bigger. In addition, as the scale of the logic circuits installed increases, the placement of the cells that make up the logic circuits has to cover a wider area, which means that the length of the interconnections between these cells is increasing and the area for forming signal interconnections. This has the disadvantage that the wiring capacity of the signal wiring increases, and furthermore, the wiring resistance increases with miniaturization, and the delay time characteristics deteriorate.

本発明の目的は、半導体チップ内の信号配線長を実効的
に短縮し、論理回路セルの寸法を縮減して、搭載ゲート
数の増加を可能とする半導体集積回路を提供することに
ある。
An object of the present invention is to provide a semiconductor integrated circuit that can effectively shorten the length of signal wiring within a semiconductor chip, reduce the dimensions of logic circuit cells, and increase the number of mounted gates.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体集積回路は、半導体チップの一主面に格
子状に設けた主幹電源バスと、前記主幹電源バスにより
区画し行列状に配置した論理回路形成領域と、前記論理
回路形成領域の中央部に設けて論理回路形成用のトラン
ジスタ及び抵抗を配置した集合セル領域と、前記論理回
路形成領域の前記集合セル領域外周に設けた前記集合セ
ル領域間の信号接続用配線領域と、前記半導体チップの
周縁部に配置して設けた電源及び入出力信号接続用パッ
ドと、前記パッドの内周の前記主幹電源バスに隣接して
設けた出力用ゲート素子とを有するように構成される。
The semiconductor integrated circuit of the present invention includes a main power supply bus provided in a lattice pattern on one main surface of a semiconductor chip, a logic circuit formation area divided by the main power supply bus and arranged in a matrix, and a center of the logic circuit formation area. an aggregated cell area in which transistors and resistors for forming a logic circuit are arranged; a wiring area for signal connection between the aggregated cell areas provided on the outer periphery of the aggregated cell area of the logic circuit forming area; and the semiconductor chip. The power supply and input/output signal connection pads are arranged on the periphery of the pad, and an output gate element is provided adjacent to the main power supply bus on the inner periphery of the pad.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例の回路配置を示す半導体
チップの平面図である。
FIG. 1 is a plan view of a semiconductor chip showing a circuit arrangement according to a first embodiment of the present invention.

第1図に示すように、半導体チップ1の一主面に格子状
に配置した主幹電源バス2を設け、主幹電源バス2によ
り行列状に区画された論理回路形成領域を設け、前記論
理回路形成領域の中央部に論理回路形成用のトランジス
タ及び抵抗を配置した集合セル領域3を形成し、前記論
理回路形成領域の集合セル領域3の外周に集合セル領域
3の信号接続用配線領域4を形成する。半導体チップ1
の周縁部に電源及び入出力信号接続用パッド5を配列し
て設け、パッド5の内周の主幹電源バス2に隣接して出
力用ゲート素子6を配列して設ける。ここで、出力用ゲ
ート素子6は外部回路駆動用として電流容量の大きなト
ランジスタ及び抵抗により構成するのが一般的である。
As shown in FIG. 1, a main power supply bus 2 arranged in a lattice pattern is provided on one main surface of a semiconductor chip 1, and a logic circuit forming area partitioned into rows and columns by the main power supply bus 2 is provided. An aggregated cell area 3 in which transistors and resistors for forming a logic circuit are arranged is formed in the center of the area, and a signal connection wiring area 4 of the aggregated cell area 3 is formed around the outer periphery of the aggregated cell area 3 of the logic circuit formation area. do. semiconductor chip 1
Power supply and input/output signal connection pads 5 are arranged and provided on the periphery of the pads 5, and output gate elements 6 are arranged and provided adjacent to the main power supply bus 2 on the inner periphery of the pads 5. Here, the output gate element 6 is generally composed of a transistor with a large current capacity and a resistor for driving an external circuit.

また、第1図では、主幹電源バス2が1系統の場合を示
しているが、2電源を使用する場合には主幹電源バス2
は2系統に分割される。
In addition, although Fig. 1 shows the case where the main power supply bus 2 is one system, when using two power supplies, the main power supply bus 2
is divided into two systems.

第2図は第1図の論理回路形成領域の詳細な回路配置の
第1の例を示す一部切欠平面図である。
FIG. 2 is a partially cutaway plan view showing a first example of a detailed circuit layout of the logic circuit forming area of FIG. 1. FIG.

第2図に示すように、主幹電源バス2により区画された
論理回路形成領域内に、論理回路セルフを例えば18箇
行方向に配列したものを列方向に19行配列し、各行間
にセル間配線領域8を設けた集合セル領域3と、集合セ
ル領域3の外周に設けた信号接続用配線領域4と、主幹
電源バス2に接続した内部電源バス9を9列配列して設
けている。
As shown in FIG. 2, in the logic circuit forming area partitioned by the main power supply bus 2, logic circuit self cells arranged in, for example, 18 rows are arranged in 19 rows in the column direction. An aggregated cell area 3 provided with a wiring area 8, a wiring area 4 for signal connection provided on the outer periphery of the aggregated cell area 3, and an internal power supply bus 9 connected to the main power supply bus 2 are arranged in nine rows.

第3図は第1図の論理回路形成領域の詳細な回路配置の
第2の例を示す平面図である。
FIG. 3 is a plan view showing a second example of the detailed circuit layout of the logic circuit forming area of FIG. 1.

第3図に示すように、主幹電源バス2により区画された
論理回路形成領域内に、特定回路機能を満たすセル(以
下機能セルと記す)10を適宜配置し、それぞれの機能
セル10への電源供給は、主幹電源バス2に接続した内
部電源バス9によりそれぞれ行又は列方向に最短距離で
接続する。
As shown in FIG. 3, cells (hereinafter referred to as functional cells) 10 that satisfy a specific circuit function are appropriately arranged in a logic circuit forming area partitioned by a main power supply bus 2, and power supply to each functional cell 10 is provided. The power supply is connected by an internal power supply bus 9 connected to the main power supply bus 2 in the row or column direction at the shortest distance.

第4図は本発明の第2の実施例の回路配置を示す半導体
チップの平面図である。
FIG. 4 is a plan view of a semiconductor chip showing the circuit layout of a second embodiment of the present invention.

第4図に示すように、基本的構成は第1図に示した第1
の実施例と同様であるが、集合セル領域11が集合セル
領域3の4倍の面積を有しており、機能回路が集合セル
領域3の領域内に収容しきれない場合、集合セル領域3
の4倍に相当する集合セル領域11と集合セル領域11
の外周に設けた信号接続用配線領域12からなる論理回
路形成領域を設ける。但し、この場合も主幹電源バス2
は第1の実施例と同様にレイアウトされる。
As shown in Figure 4, the basic configuration is as shown in Figure 1.
However, if the aggregated cell area 11 has an area four times that of the aggregated cell area 3 and the functional circuit cannot be accommodated within the area of the aggregated cell area 3, then the aggregated cell area 3
The aggregate cell area 11 and the aggregate cell area 11 corresponding to four times
A logic circuit forming area consisting of a signal connection wiring area 12 provided on the outer periphery of the area is provided. However, in this case as well, the main power supply bus 2
is laid out in the same way as in the first embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体チップ上の周縁部
に形成した電源及び入出力信号接続用パッドと出力用ゲ
ート素子を除いた領域を、格子状に設けた主幹電源バス
により複数の行1列に区画した論理回路形成領域を設け
、その各々に論理回路の形成に充分なだけのトランジス
タと抵抗群を有する集合セル領域と、集合セル領域の外
周に信号接続用配線領域を設けることにより、次の様な
効果を得ることができる。
As explained above, in the present invention, the area excluding the power supply and input/output signal connection pads and output gate elements formed on the peripheral part of the semiconductor chip is connected to a plurality of rows by main power supply buses provided in a lattice shape. By providing logic circuit formation areas divided into columns, each of which has an aggregate cell area having enough transistors and resistor groups to form a logic circuit, and a signal connection wiring area around the outer periphery of the aggregate cell area, The following effects can be obtained.

第1点は、等価ゲート数が数千ゲートがら数万ゲートと
大規模なLSIを見てみると、いずれも数個から数十の
機能ブロックにより形成されていることが多い。しかも
各機能ブロックは、論理構成上の特色を持っている。例
えば、フリップフロップを多用している回路、或いは排
他論理を多用している回路、或いは単純なゲートのみの
構成回路、等である。本発明では機能ブロック単位で集
合セル領域を形成し、レイアウト上も半導体チップ全域
に分散することなく、集合セル領域という1つの単位領
域に集中させることにより、機能ブロック内の信号配線
を集合セル領域内にて閉じ、その配線長を従来方式に比
べて短くすることができるため、信号配線の配線容量、
配線抵抗に伴なう信号伝搬遅延時間(tpd)特性の向
上が可能となる。
The first point is that when we look at large-scale LSIs with an equivalent number of gates ranging from several thousand gates to tens of thousands, they are often formed from several to several tens of functional blocks. Furthermore, each functional block has its own characteristics in terms of logical configuration. For example, a circuit that uses a lot of flip-flops, a circuit that uses exclusive logic a lot, or a circuit that consists of only simple gates. In the present invention, a collective cell area is formed in each functional block, and the signal wiring within the functional block is concentrated in one unit area called the collective cell area without being distributed over the entire semiconductor chip in terms of layout. Since the wiring length can be shortened compared to the conventional method, the wiring capacity of the signal wiring,
It is possible to improve signal propagation delay time (tpd) characteristics associated with wiring resistance.

第2点は、集合セル領域単位にて、その機能ブロックに
応じた特徴あるレイアウト構造がとれることである。即
ち、フリップフロップを多用している機能ブロックであ
れば、フリップフロップの性能を最優先にしたレイアウ
ト構造とすることが出来るし、排他論理を多用している
機能ブロックであれば、排他論理回路の性能を優先的に
考慮したレイアウト構造とすることが出来る。或いは、
集合セル領域を1つのRAM集合セルとしても良い、こ
れらのことは、1つ1つの機能ブロックの回路性能の向
上が図れるとともに、大型チップの開発にあたり、ブロ
ック単位の分離設計が出来るという利点がある。
The second point is that a characteristic layout structure corresponding to the functional block can be created for each aggregated cell area. In other words, a functional block that uses many flip-flops can have a layout structure that prioritizes the performance of the flip-flops, and a functional block that uses many exclusive logics can have a layout structure that prioritizes the performance of exclusive logic circuits. It is possible to create a layout structure that prioritizes performance. Or,
The aggregate cell area may be used as one RAM aggregate cell, which has the advantage of improving the circuit performance of each functional block and allowing separate design of each block when developing large chips. .

第3点は、いわゆるゲートアレイ構成の集合セル領域に
おいて、アレイ状に配列された論理回路セル(一般には
AND/NANDゲートが数ゲートにて構成されている
)のサイズをより縮小できることである。即ち、従来の
場合、チップ全域に配列されたセル列又はセル行を考慮
して内部電源バスの幅の寸法が決定されるのに対し、本
発明の集合セル領域では、集合セル領域の周囲に主幹電
源バスが配置されているので、集合セル領域内に配列さ
れたセル列又はセル行を考慮して内部電源バスの幅が決
定される為、セル内の電流を同じとした場合には、内部
電源バスの幅の寸法が縮小される。この為に、セル内で
大きな比重を占めていた特にバイポーラ系の論理回路セ
ルが縮小され、故に、同−面積内に収納できる論理回路
セル数が大幅に増大可能となる。
The third point is that the size of logic circuit cells arranged in an array (generally composed of several AND/NAND gates) can be further reduced in a so-called collective cell region of a gate array configuration. That is, in the conventional case, the width dimension of the internal power supply bus is determined by taking into account the cell columns or cell rows arranged throughout the chip, whereas in the aggregated cell area of the present invention, Since the main power supply bus is arranged, the width of the internal power supply bus is determined by considering the cell columns or cell rows arranged in the collective cell area, so if the current in the cells is the same, Internal power bus width dimensions are reduced. For this reason, the bipolar logic circuit cells, which occupy a large proportion of the cells, are reduced in size, and the number of logic circuit cells that can be accommodated within the same area can be greatly increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例の回路配置を示す半導体
チップの平面図、第2図は第1図の論理回路形成領域の
詳細な回路配置の第1の例を示す一部切欠平面図、第3
図は第1図の論理回路形成領域の詳細な回路配置の第2
の例を示す平面図、第4図は本発明の第2の実施例の回
路配置を示す半導体チップの平面図、第5図は従来の半
導体集積回路の回路配置の一例を示す半導体チップの平
面図である。 l・・・半導体チップ、2・・・主幹電源バス、3・・
・集合セル領域、4・・・信号接続用配線領域、5・・
・パッド、6・・・ゲート素子、7・・・論理回路セル
、8・・・セル間配線領域、9・・・内部電源バス、1
o・・・機能セル、11・・・集合セル領域、12・・
・信号接続用配線領域。
FIG. 1 is a plan view of a semiconductor chip showing a circuit layout according to a first embodiment of the present invention, and FIG. 2 is a partially cutaway diagram showing a first example of a detailed circuit layout of the logic circuit forming area of FIG. 1. Floor plan, 3rd
The figure is the second detailed circuit layout of the logic circuit formation area in Figure 1.
4 is a plan view of a semiconductor chip showing an example of the circuit layout of a second embodiment of the present invention, and FIG. 5 is a plan view of a semiconductor chip showing an example of the circuit layout of a conventional semiconductor integrated circuit. It is a diagram. l...Semiconductor chip, 2...Main power supply bus, 3...
・Aggregation cell area, 4... Wiring area for signal connection, 5...
・Pad, 6... Gate element, 7... Logic circuit cell, 8... Inter-cell wiring area, 9... Internal power supply bus, 1
o...Functional cell, 11...Aggregation cell area, 12...
・Wiring area for signal connections.

Claims (1)

【特許請求の範囲】[Claims]  半導体チップの一主面に格子状に設けた主幹電源バス
と、前記主幹電源バスにより区画し行列状に配置した論
理回路形成領域と、前記論理回路形成領域の中央部に設
けて論理回路形成用のトランジスタ及び抵抗を配置した
集合セル領域と、前記論理回路形成領域の前記集合セル
領域外周に設けた前記集合セル領域間の信号接続用配線
領域と、前記半導体チップの周縁部に配置して設けた電
源及び入出力信号接続用パッドと、前記パッドの内周の
前記主幹電源バスに隣接して設けた出力用ゲート素子と
を有することを特徴とする半導体集積回路。
A main power supply bus provided in a lattice shape on one main surface of a semiconductor chip, a logic circuit formation area partitioned by the main power supply bus and arranged in a matrix, and a logic circuit formation area provided in the center of the logic circuit formation area for forming a logic circuit. an aggregated cell area in which transistors and resistors are arranged; a wiring area for signal connection between the aggregated cell areas provided on the outer periphery of the aggregated cell area in the logic circuit formation area; and a wiring area arranged at the periphery of the semiconductor chip. What is claimed is: 1. A semiconductor integrated circuit comprising: a power supply and input/output signal connection pad; and an output gate element provided adjacent to the main power supply bus on the inner periphery of the pad.
JP62312831A 1987-12-09 1987-12-09 Semiconductor integrated circuit Pending JPH01152642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62312831A JPH01152642A (en) 1987-12-09 1987-12-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62312831A JPH01152642A (en) 1987-12-09 1987-12-09 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH01152642A true JPH01152642A (en) 1989-06-15

Family

ID=18033948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62312831A Pending JPH01152642A (en) 1987-12-09 1987-12-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH01152642A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7774186B2 (en) 2002-04-25 2010-08-10 Synopsys, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
US7943436B2 (en) 2002-07-29 2011-05-17 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8074197B2 (en) 2002-07-29 2011-12-06 Synopsys, Inc. Shielding mesh design for an integrated circuit device

Citations (1)

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US7774186B2 (en) 2002-04-25 2010-08-10 Synopsys, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
US8692297B2 (en) 2002-04-25 2014-04-08 Synopsys, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
US7943436B2 (en) 2002-07-29 2011-05-17 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8074197B2 (en) 2002-07-29 2011-12-06 Synopsys, Inc. Shielding mesh design for an integrated circuit device
US8122412B2 (en) 2002-07-29 2012-02-21 Synopsys, Inc. Shelding mesh design for an integrated circuit device
US8161442B2 (en) 2002-07-29 2012-04-17 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8166434B2 (en) 2002-07-29 2012-04-24 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8171441B2 (en) 2002-07-29 2012-05-01 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8286118B2 (en) 2002-07-29 2012-10-09 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
US8386979B2 (en) 2002-07-29 2013-02-26 Synopsys, Inc. Method and apparatus to design an interconnection device in a multi-layer shielding mesh
US8701068B2 (en) 2002-07-29 2014-04-15 Synopsys, Inc. Interconnection device in a multi-layer shielding mesh
US8881086B2 (en) 2002-07-29 2014-11-04 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices

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