JPS63187647A - Master slice system semiconductor integrated circuit - Google Patents

Master slice system semiconductor integrated circuit

Info

Publication number
JPS63187647A
JPS63187647A JP1985187A JP1985187A JPS63187647A JP S63187647 A JPS63187647 A JP S63187647A JP 1985187 A JP1985187 A JP 1985187A JP 1985187 A JP1985187 A JP 1985187A JP S63187647 A JPS63187647 A JP S63187647A
Authority
JP
Japan
Prior art keywords
wiring
block
internal
blocks
basic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985187A
Other languages
Japanese (ja)
Inventor
Hideki Matsuura
英樹 松浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1985187A priority Critical patent/JPS63187647A/en
Publication of JPS63187647A publication Critical patent/JPS63187647A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits

Abstract

PURPOSE:To control wiring length by performing connection within internal blocks and external blocks, and between the internal blocks and the external blocks, by using blocks for wirings consisting of basic cells for the wirings. CONSTITUTION:Basic cells 3 for wirings are arranged among basic cell rows 2 for a master slice type semiconductor integrated circuit and among cell rows 1 for input-output circuits and the basic cell rows 2. A block 10 for the wiring is disposed onto a cell array for the wirings just under an internal block 4 and an internal block 7. An output terminal 5 for the internal block 4 and a connecting terminal 11 for the block 10 for the wiring, an input terminal 8 for the internal block 7 and a connecting terminal 13 for the block for the wiring, an input terminal 9 for the internal block 7 and a connecting terminal 14 for the block 10 for the wiring, and an output terminal 6 for the internal block 4 and a connecting terminal 12 for the block 10 for the wiring are connected respectively. Accordingly, wiring length can be controlled.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はゲートアレイLSIに関し、特にその単位セル
列間に設けられた配線領域の構成に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gate array LSI, and particularly to the structure of a wiring region provided between unit cell columns thereof.

〔従来の技術〕[Conventional technology]

従来、この種のゲートアレイLSIは、第3図のように
いくつかの基本トランジスタよシなる基本セル2を一方
向に多数並べた基本セル列を、列間に所定の間隔の配線
領域20を設けて、複数列平行に配置し、その基本セル
列群の周辺を入出力回路用基本セル1よりなるセル列で
とり囲んだ構成となっていた。また複数の基本セル2よ
シなる機能ブロック4と7との接続は配線領域20内p
ADシステムにより自動的に設計して行なわれていた。
Conventionally, this type of gate array LSI consists of basic cell rows in which a large number of basic cells 2 such as several basic transistors are arranged in one direction as shown in FIG. A plurality of basic cell rows are arranged in parallel, and the periphery of the basic cell row group is surrounded by a cell row consisting of basic cells 1 for input/output circuits. Further, the connection between the functional blocks 4 and 7, which are the plurality of basic cells 2, is made within the wiring area 20.
This was automatically designed and carried out using the AD system.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のマスタースライス方式の半導体集積回路
では、いくつかの基本セル2で構成される機能ブロック
(以下内部ブロックと略す)4゜7問および基本セル列
群の周囲に配置された入出力回路用基本セル1で構成さ
れる機能ブロック(以下外部ブロックと略す)との接続
は基本セル2の列間に設けられた配線領域20を用いて
、あらかじめチップ上に設定された配線格子上でCAD
システムを用いて自動的に行なわれていた。しかしなが
ら回路設計段階で遅延時間が問題になると予想される信
号バスがある場合には、つまシ遅延時間の最小値を制御
する必要がある。最大値を制御する必要がある。あるい
はバス間の相対バラツキを制御するような必要がある等
の場合には自動配線の結果では十分ではない場合がある
。このような場合、従来のマスタースライス方式の半導
体集積回路では自動配線が完了した後作業者が個々に配
線を修正するか、あるいは自動配線の際に、必要な配線
データを特別に入力しておく等の操作が必要となり、設
計工数の増大を招くという欠点を有する。さらにこのこ
とはデータバスラインを有する回路構成ではさらに顕著
となる。
In the conventional master slice type semiconductor integrated circuit described above, there are 4.7 functional blocks (hereinafter referred to as internal blocks) composed of several basic cells 2 and input/output circuits arranged around the basic cell row group. The connection with the functional blocks (hereinafter referred to as external blocks) made up of the basic cells 1 is made using the wiring area 20 provided between the columns of the basic cells 2, using CAD on the wiring grid set on the chip in advance.
This was done automatically using a system. However, if there is a signal bus whose delay time is expected to be a problem at the circuit design stage, it is necessary to control the minimum value of the delay time. It is necessary to control the maximum value. Alternatively, in cases where it is necessary to control relative variations between buses, the results of automatic wiring may not be sufficient. In such cases, in conventional master slice type semiconductor integrated circuits, the operator must modify the wiring individually after the automatic wiring is completed, or the necessary wiring data must be specially input during automatic wiring. This method requires the following operations, which has the drawback of increasing the number of design steps. Furthermore, this becomes even more remarkable in a circuit configuration having a data bus line.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、基本セル列間に設けられた配線領域内
および基本セルアレイ領域と入出力回路用基本セル領域
との間の領域の少なくとも一方に、配線用基本セルアレ
イを設置し、それを接続しようとする基本セルのブロッ
ク間に配置することによシ、ブロックの入出力端子間の
配線長を容易に制御できるマスタースライス方式の半導
体集積回路を得る。
According to the present invention, the basic cell array for wiring is installed in at least one of the wiring area provided between the basic cell rows and the area between the basic cell array area and the basic cell area for input/output circuits, and is connected to the wiring area. By arranging the intended basic cells between the blocks, a master slice type semiconductor integrated circuit is obtained in which the wiring length between the input and output terminals of the blocks can be easily controlled.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例のマスタースライス方式の半
導体集積回路の構成図である。入出力回路用基本セル1
はチップの周辺部に配置され、このセル1により構成さ
れる外部ブロックは基本セル2によシ構成される内部ブ
ロックの信号を集積回路の外部へと9出したり、外部か
らの信号を内部ブロックへ伝えたすする機能を持つ。基
本セル2は横方向に複数個盤べられて基本セル列を構成
している。この基本セル2を組み合わせることによシ種
々の機能ブロック(内部ブロック)4.7が構成可能と
なる。配線用基本セル3は基本セル2間の配線領域に設
置されている。この配線用基本セル3をいくつか組み合
わせることにより 24々の配線長及び配線革数を持っ
た配線用ブロック10が構成できる。3個の基本セル2
よりなる内部ブロック4は出力端子5,6を有しており
、4個の基本セル2よりなる内部ブロック7fi入力端
子8.9を有している。10個の配線用基本セル3で1
つの配線用ブロック1oが形成されている。この例では
2本の配線データと4個の接続端子11゜12.13.
14を有している。
FIG. 1 is a block diagram of a master slice type semiconductor integrated circuit according to an embodiment of the present invention. Basic cell for input/output circuit 1
is placed on the periphery of the chip, and the external block made up of this cell 1 outputs signals from the internal block made up of basic cell 2 to the outside of the integrated circuit, and sends signals from the outside to the internal block. It has the function of sipping. A plurality of basic cells 2 are arranged horizontally to form a basic cell row. By combining these basic cells 2, various functional blocks (internal blocks) 4.7 can be constructed. The basic cells 3 for wiring are installed in the wiring area between the basic cells 2. By combining several of these basic wiring cells 3, a wiring block 10 having 24 wiring lengths and 24 wiring layers can be constructed. 3 basic cells 2
The internal block 4 made up of the following has output terminals 5, 6, and the internal block 7fi made up of the four basic cells 2 has input terminals 8.9. 10 basic wiring cells 3 to 1
Two wiring blocks 1o are formed. In this example, two wiring data and four connection terminals 11°12.13.
It has 14.

この実施例において、内部ブロック4の出力端子5,6
と内部ブロック6の入力端子8,9をそれぞれ短い距離
でしかも配線長をそろえて接続しようとした場合、配線
用ブロック1oを内部ブロック4と7の直下の配線用セ
ルアレイ上に配置する。そして自動配線の際には内部ブ
ロック4の出力端子5と配線用ブロック1oの接続端子
11、内部ブロック7の入力端子8と配線用ブロック1
゜の接続端子13、内部ブロック7の入力端子9と配線
用ブロック10の接続端子14、および内部ブロック4
の出力端子6と配線用ブロック1oの接続端子12をそ
れぞれ接続するのみでこの接続は完了する。
In this embodiment, the output terminals 5, 6 of the internal block 4
When attempting to connect the input terminals 8 and 9 of the internal blocks 6 and 6 at short distances and with the same wiring length, the wiring block 1o is placed on the wiring cell array immediately below the internal blocks 4 and 7. Then, during automatic wiring, the output terminal 5 of the internal block 4 and the connection terminal 11 of the wiring block 1o, the input terminal 8 of the internal block 7 and the wiring block 1
゜ connection terminal 13, input terminal 9 of internal block 7 and connection terminal 14 of wiring block 10, and internal block 4
This connection is completed by simply connecting the output terminal 6 of the wiring block 1o and the connection terminal 12 of the wiring block 1o.

第2図は本発明の他の実施例のマスタースライス型半導
体集積回路の構成図である。入出力回路用基本セル1に
よシ外部ブロック15が構成され、その入力端子16を
有している。内部ブロック4の出力端子5と外部ブロッ
ク15の入力端子16とは配線用ブロック17の接続端
子18.19を介して接続されている。このように、こ
の実施例では配線用ブロック17を構成する配線用基本
セル3を基本セル2の列間だけで力く入出力回路用セル
10列と基本セル20列との間にも設置することにより
、内部ブロック4同志のみでなく、外部ブロック15と
内部ブロック4との接続あるいは外部ブロック15同志
の接続の際にも配線用ブロック17の使用が可能となる
FIG. 2 is a block diagram of a master slice type semiconductor integrated circuit according to another embodiment of the present invention. An external block 15 is constituted by the input/output circuit basic cell 1 and has an input terminal 16. The output terminal 5 of the internal block 4 and the input terminal 16 of the external block 15 are connected via connection terminals 18 and 19 of the wiring block 17. As described above, in this embodiment, the basic wiring cells 3 constituting the wiring block 17 are installed not only between the columns of basic cells 2 but also between the 10th column of input/output circuit cells and the 20th column of basic cells. This makes it possible to use the wiring block 17 not only for connecting the internal blocks 4 to each other but also for connecting the external block 15 and the internal block 4 or connecting the external blocks 15 to each other.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明はマスタースライス型半導
体集積回路の基本セル列間および入出力回路用セル列と
基本セル列との間に配線用基本セルを配置し、その配線
用基本セルからなる配線用ブロックを用いて内部ブロッ
ク間、外部ブロック間および内部ブロックと外部ブロッ
ク間の接続を行うことにより容易に配線長の制御が可能
となりその結果ゲートアレイ設計における工数の削減。
As explained above, the present invention arranges basic cells for wiring between the basic cell rows and between the input/output circuit cell row and the basic cell row of a master slice type semiconductor integrated circuit, and consists of the basic cells for wiring. By using wiring blocks to connect internal blocks, external blocks, and internal and external blocks, wiring length can be easily controlled, resulting in a reduction in man-hours in gate array design.

’f’ATの短縮をできる効来がある。It has the effect of shortening 'f'AT.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例シでよるマスタースライス型
半導体集積回路の平面構成図、第2図は本発明の他の実
施例によるマスタースライスW半4体集積回路の平面構
成図、第3図は在米のマスタースライス型半導体集積回
路の平面構成図である。 1・・・・・・入出力回路用基本セル、2・・・・・・
基本セル、3・・・・・・配線用基本セル、4.7・・
・・・・内部ブロック、5.6・・・・・・内部ブロッ
クの出力端子、8,9・・・・・・内部ブロックの入力
端子、10.17・・・・・・配線用ブロック、11,
12,13,14.18.19・・・・・・配線用ブロ
ックの接続端子、20・・・・・・配線領域。 y−¥、’−J、”、、 代理人 弁理士  内 原   晋/、、、”−。 く・−1′ ガ1回 竿2し 万3回
FIG. 1 is a plan configuration diagram of a master slice type semiconductor integrated circuit according to one embodiment of the present invention, and FIG. 2 is a plan configuration diagram of a master slice W half integrated circuit according to another embodiment of the present invention. FIG. 3 is a plan configuration diagram of a master slice type semiconductor integrated circuit in the United States. 1...Basic cell for input/output circuit, 2...
Basic cell, 3...Basic cell for wiring, 4.7...
...Internal block, 5.6...Output terminal of internal block, 8,9...Input terminal of internal block, 10.17...Wiring block, 11,
12, 13, 14.18.19... Connection terminal of wiring block, 20... Wiring area. y-¥,'-J,”,, Agent Patent Attorney Susumu Uchihara/,,,”-. Ku・-1′ Ga 1 time Rod 2 Shiman 3 times

Claims (1)

【特許請求の範囲】[Claims] 第1の単位セルを一方向に複数個配列してなる列を列間
に所定の間隔の配線領域をはさんで複数個並列に配置し
、第2の単位セルを前記第1の単位セルの列の群の周囲
に配置してなるマスタースライス方式の半導体において
、前記第1の単位セル又は前記第2の単位セルで構成さ
れる機能ブロック間の接続のための配線用単位セル前記
配線領域内に設置したことを特徴とするマスタースライ
ス方式の半導体集積回路。
A plurality of columns in which a plurality of first unit cells are arranged in one direction are arranged in parallel with a wiring area at a predetermined interval between the columns, and a second unit cell is arranged in parallel with the first unit cell. In a master slice type semiconductor arranged around a group of columns, a unit cell for wiring for connection between functional blocks constituted by the first unit cell or the second unit cell in the wiring region; A master slice type semiconductor integrated circuit characterized by being installed in a.
JP1985187A 1987-01-29 1987-01-29 Master slice system semiconductor integrated circuit Pending JPS63187647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985187A JPS63187647A (en) 1987-01-29 1987-01-29 Master slice system semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985187A JPS63187647A (en) 1987-01-29 1987-01-29 Master slice system semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS63187647A true JPS63187647A (en) 1988-08-03

Family

ID=12010750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985187A Pending JPS63187647A (en) 1987-01-29 1987-01-29 Master slice system semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS63187647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168342A (en) * 1989-01-30 1992-12-01 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method of the same
US5510636A (en) * 1992-12-28 1996-04-23 Kawasaki Steel Corporation Master-slice type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168342A (en) * 1989-01-30 1992-12-01 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method of the same
US5510636A (en) * 1992-12-28 1996-04-23 Kawasaki Steel Corporation Master-slice type semiconductor device

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