JPS5763847A - Transistor circut - Google Patents

Transistor circut

Info

Publication number
JPS5763847A
JPS5763847A JP55138992A JP13899280A JPS5763847A JP S5763847 A JPS5763847 A JP S5763847A JP 55138992 A JP55138992 A JP 55138992A JP 13899280 A JP13899280 A JP 13899280A JP S5763847 A JPS5763847 A JP S5763847A
Authority
JP
Japan
Prior art keywords
transistor
bonding wires
transistors
case
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55138992A
Other languages
Japanese (ja)
Inventor
Masao Aiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55138992A priority Critical patent/JPS5763847A/en
Publication of JPS5763847A publication Critical patent/JPS5763847A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make uniform the operations of a plurality of transistors by connecting the input electrodes of the transistors with each other by means of bonding wires so as to constitute a high-power transistor by parallel operation of these transistors. CONSTITUTION:The input terminals Ba, Bb and Bc of each transistor cell are connected with each other by bonding wires 10a and 10b. It is true that, in an ideal case, i.e. in a case when each of the transistor cells 1a, 1b and 1c has equal characteristic and a uniform internal matching circuit, these points of connection become equipotential and the bonding wires 10a and 10b cause no effect. But, in a case when an input power is not distributed euqlly to each transistor at a point A owing to the non-uniformity of the internal matching circuit or the like, it is distributed by the bonding wires, which reduces the non-uniformity of the operation of each transistor cell. As a result, a saturation output becomes nearly three times more than the one obtained by one transistor.
JP55138992A 1980-10-04 1980-10-04 Transistor circut Pending JPS5763847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55138992A JPS5763847A (en) 1980-10-04 1980-10-04 Transistor circut

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138992A JPS5763847A (en) 1980-10-04 1980-10-04 Transistor circut

Publications (1)

Publication Number Publication Date
JPS5763847A true JPS5763847A (en) 1982-04-17

Family

ID=15234945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138992A Pending JPS5763847A (en) 1980-10-04 1980-10-04 Transistor circut

Country Status (1)

Country Link
JP (1) JPS5763847A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140738A (en) * 1983-12-27 1985-07-25 Fujitsu Ltd High-frequency high-output transistor
EP2160761B1 (en) * 2007-06-22 2019-12-04 Cree, Inc. Rf transistor package with input and output matching networks each comprising a split capacitor and corresponding manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140738A (en) * 1983-12-27 1985-07-25 Fujitsu Ltd High-frequency high-output transistor
JPH0129441B2 (en) * 1983-12-27 1989-06-12 Fujitsu Ltd
EP2160761B1 (en) * 2007-06-22 2019-12-04 Cree, Inc. Rf transistor package with input and output matching networks each comprising a split capacitor and corresponding manufacturing method

Similar Documents

Publication Publication Date Title
JPS5284987A (en) Voltage dividing circuit
JPS5763847A (en) Transistor circut
JPS5662427A (en) Logic circuit
JPS53107259A (en) Compensator for delay of envelope
JPS548452A (en) Analog gate circuit
JPS56147461A (en) Semiconductor device
JPS5687350A (en) Semiconductor device
JPS5794984A (en) Semiconductor storage device
JPS5757033A (en) Logical operation circuit using complementary mis field effect transistor
JPS5246736A (en) Semiconductor storage circuit
SU678638A1 (en) Amplifier
JPS52149947A (en) Direct-coupled type differential amplifier
JPS55107309A (en) Feedback circuit
JPS5258450A (en) Transistor output circuit
JPS6471140A (en) Semiconductor device
JPS53120288A (en) Constant voltage semiconductor device
JPS57136813A (en) Resistance branching circuit
GB999469A (en) Improvements in or relating to logical operators
JPS5753152A (en) Inverter circuit
JPS5259548A (en) Hybrid branching circuit
JPS53133749A (en) Power source circuit
JPS52161A (en) Mos inverter circuit
JPS5258378A (en) Protection of input to mos type integrated circuit
JPS56156023A (en) Complementary field effect transistor input circuit
JPS5295135A (en) Semi-conductor logic circuit