JPS5712559A - Junction type field effect semiconductor device - Google Patents
Junction type field effect semiconductor deviceInfo
- Publication number
- JPS5712559A JPS5712559A JP8661680A JP8661680A JPS5712559A JP S5712559 A JPS5712559 A JP S5712559A JP 8661680 A JP8661680 A JP 8661680A JP 8661680 A JP8661680 A JP 8661680A JP S5712559 A JPS5712559 A JP S5712559A
- Authority
- JP
- Japan
- Prior art keywords
- area
- type
- regions
- source
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a J-FET having high efficiency of effective area and a high withstand voltage by a method wherein gate layers are arranged in a mesh type making the area of drain regions (or source regions) larger than the area of the source regions (or the drain regions). CONSTITUTION:The P type gate layers 3 are arranged in the mesh type arranging a narrow interval d1 and a broad interval d2 alternately, and the area d2Xd2 of the drain region D is made as larger than the area d1Xd2 of the source region S. Consequently the withstand voltage of the drain regions can be enlarged, and efficiency of effective area in a chip can be increased without increasing the area of the chip. Moreover to utilize crossing parts A of the narrow gate layers at the interval d1, N<+> type connecting layers 5 are provided to provide source electrodes, or P<+> type layers reaching a P type substrate are provided at the A parts to be connected to the gate of substrate, and reduction of gate resistance is attained. Source wirings 7, drain wirings 8 of Al are provided in the diagonal direction interposing an insulating film between them to be connected to the respective regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8661680A JPS5712559A (en) | 1980-06-27 | 1980-06-27 | Junction type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8661680A JPS5712559A (en) | 1980-06-27 | 1980-06-27 | Junction type field effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5712559A true JPS5712559A (en) | 1982-01-22 |
Family
ID=13891948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8661680A Pending JPS5712559A (en) | 1980-06-27 | 1980-06-27 | Junction type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712559A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009038392A (en) * | 2003-05-15 | 2009-02-19 | Panasonic Corp | Semiconductor device |
| CN108091575A (en) * | 2017-12-21 | 2018-05-29 | 深圳市晶特智造科技有限公司 | Junction field effect transistor and preparation method thereof |
-
1980
- 1980-06-27 JP JP8661680A patent/JPS5712559A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009038392A (en) * | 2003-05-15 | 2009-02-19 | Panasonic Corp | Semiconductor device |
| CN108091575A (en) * | 2017-12-21 | 2018-05-29 | 深圳市晶特智造科技有限公司 | Junction field effect transistor and preparation method thereof |
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