JPS566476A - Ultrahigh frequency field effect transistor - Google Patents

Ultrahigh frequency field effect transistor

Info

Publication number
JPS566476A
JPS566476A JP8189379A JP8189379A JPS566476A JP S566476 A JPS566476 A JP S566476A JP 8189379 A JP8189379 A JP 8189379A JP 8189379 A JP8189379 A JP 8189379A JP S566476 A JPS566476 A JP S566476A
Authority
JP
Japan
Prior art keywords
electrode
comb
electrodes
shaped
connecting portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8189379A
Other languages
Japanese (ja)
Inventor
Yoichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8189379A priority Critical patent/JPS566476A/en
Publication of JPS566476A publication Critical patent/JPS566476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the construction of an electrode lead-out portion of a comb- shaped full gate electrodes and full drain electrodes of an ultrahigh frequency field effect transistor and eliminate the bonding between an independent source and electrodes by leading out the comb-shaped electrodes and the drain electrode through equal length connecting portions in bundle each. CONSTITUTION:A gate electrode 21, a drain electrode 22 and a source electrode 23 are formed in comb shape on an N-type semiconductor gallium arsenide active layer on a semi-insulating gallium arsenide substrate, the comb-shaped gate electrode 21 is led out through equal length connecting portion 26 to a bonding pad 24, the comb-shaped drain electrode is led out through a connecting portion 28 to a bonding pad 25, and the source electrode is led out through the connecting portion 26 of the gate electrode and a silicon oxide film intersected at both side patterned lead wires to a grounding electrode pattern 27.
JP8189379A 1979-06-28 1979-06-28 Ultrahigh frequency field effect transistor Pending JPS566476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8189379A JPS566476A (en) 1979-06-28 1979-06-28 Ultrahigh frequency field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8189379A JPS566476A (en) 1979-06-28 1979-06-28 Ultrahigh frequency field effect transistor

Publications (1)

Publication Number Publication Date
JPS566476A true JPS566476A (en) 1981-01-23

Family

ID=13759114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8189379A Pending JPS566476A (en) 1979-06-28 1979-06-28 Ultrahigh frequency field effect transistor

Country Status (1)

Country Link
JP (1) JPS566476A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032365A (en) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS63116592U (en) * 1987-01-26 1988-07-27
JPH04146667A (en) * 1990-10-09 1992-05-20 Mitsubishi Electric Corp Semiconductor device
EP0817264A2 (en) * 1996-07-04 1998-01-07 Nec Corporation Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325370A (en) * 1976-08-23 1978-03-09 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS5356978A (en) * 1976-10-29 1978-05-23 Western Electric Co High power microstructure gallium arsenide schottky barrier fet transistor device and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325370A (en) * 1976-08-23 1978-03-09 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS5356978A (en) * 1976-10-29 1978-05-23 Western Electric Co High power microstructure gallium arsenide schottky barrier fet transistor device and method of producing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032365A (en) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS63116592U (en) * 1987-01-26 1988-07-27
JPH04146667A (en) * 1990-10-09 1992-05-20 Mitsubishi Electric Corp Semiconductor device
EP0817264A2 (en) * 1996-07-04 1998-01-07 Nec Corporation Semiconductor device
EP0817264A3 (en) * 1996-07-04 1998-12-09 Nec Corporation Semiconductor device

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