JPS56108267A - Insulated-gate field-effect semiconductor device - Google Patents

Insulated-gate field-effect semiconductor device

Info

Publication number
JPS56108267A
JPS56108267A JP1036180A JP1036180A JPS56108267A JP S56108267 A JPS56108267 A JP S56108267A JP 1036180 A JP1036180 A JP 1036180A JP 1036180 A JP1036180 A JP 1036180A JP S56108267 A JPS56108267 A JP S56108267A
Authority
JP
Japan
Prior art keywords
wiring
input
lead electrode
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1036180A
Other languages
Japanese (ja)
Inventor
Yutaka Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1036180A priority Critical patent/JPS56108267A/en
Publication of JPS56108267A publication Critical patent/JPS56108267A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To improve reliability of an input protector which employs polycrystalline Si as a connecting wiring between the external lead electrode for input and the gate electrode of the input transistor, by providing a clamping element to clamp an excess voltage adjacently to the lead electrode. CONSTITUTION:An external lead electrode 25 for input and a transistor having a source region 31, a drain region 31' and a gate electrode 30 are connected through a diffused wiring layer 29 by using an N type polycrystalline Si wiring layer 28. In other words, a P type Si substrate 35 is coated with a thick oxide film 33, openings are made and the diffused wiring layer 29 andf the external lead electrode 25 for input are connected by using the polycrystalline Si wiring 28, which is protected by an oxide film 32. In said constitution, at the electrode 25 portion an N type diffused layer 34 to clamp an excess voltage is provided in the substrate 35 by using a through hole 26, and after the wiring 28 is brought into contact with the layer 34, the lead electrode 25 is attached to the wiring 28 through a through hole 24.
JP1036180A 1980-01-31 1980-01-31 Insulated-gate field-effect semiconductor device Pending JPS56108267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1036180A JPS56108267A (en) 1980-01-31 1980-01-31 Insulated-gate field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1036180A JPS56108267A (en) 1980-01-31 1980-01-31 Insulated-gate field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS56108267A true JPS56108267A (en) 1981-08-27

Family

ID=11748019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1036180A Pending JPS56108267A (en) 1980-01-31 1980-01-31 Insulated-gate field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56108267A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262561A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPS6262559A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPS6262560A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPH01189142A (en) * 1988-01-25 1989-07-28 Seiko Epson Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838101A (en) * 1971-09-10 1973-06-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838101A (en) * 1971-09-10 1973-06-05

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262561A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPS6262559A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPS6262560A (en) * 1985-09-12 1987-03-19 Sanyo Electric Co Ltd Input protective circuit
JPH0518468B2 (en) * 1985-09-12 1993-03-12 Sanyo Electric Co
JPH0518467B2 (en) * 1985-09-12 1993-03-12 Sanyo Electric Co
JPH01189142A (en) * 1988-01-25 1989-07-28 Seiko Epson Corp Semiconductor device

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