JPS51128278A - Integrated circuit with resistance element - Google Patents
Integrated circuit with resistance elementInfo
- Publication number
- JPS51128278A JPS51128278A JP5273475A JP5273475A JPS51128278A JP S51128278 A JPS51128278 A JP S51128278A JP 5273475 A JP5273475 A JP 5273475A JP 5273475 A JP5273475 A JP 5273475A JP S51128278 A JPS51128278 A JP S51128278A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- resistance element
- layer
- silicon layer
- multicrystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:Applying multicrystal silicon layer including oxygen as surface protection film of MOSFET, connecting a part of the multicrystal silicon layer with conductor layer having chmic contact and gate electrode, the layer thus formed is used as protection resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5273475A JPS51128278A (en) | 1975-04-30 | 1975-04-30 | Integrated circuit with resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5273475A JPS51128278A (en) | 1975-04-30 | 1975-04-30 | Integrated circuit with resistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51128278A true JPS51128278A (en) | 1976-11-09 |
Family
ID=12923148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5273475A Pending JPS51128278A (en) | 1975-04-30 | 1975-04-30 | Integrated circuit with resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51128278A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
JPS5627951A (en) * | 1979-08-14 | 1981-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS5629344A (en) * | 1979-08-20 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit device and manufacture thereof |
JPS5643749A (en) * | 1979-09-18 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS5749193U (en) * | 1980-09-04 | 1982-03-19 | ||
JPS5898953A (en) * | 1981-12-08 | 1983-06-13 | Matsushita Electronics Corp | Semiconductor device |
JPH02138447U (en) * | 1989-02-10 | 1990-11-19 |
-
1975
- 1975-04-30 JP JP5273475A patent/JPS51128278A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
JPS5627951A (en) * | 1979-08-14 | 1981-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS5629344A (en) * | 1979-08-20 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit device and manufacture thereof |
JPS5814072B2 (en) * | 1979-08-20 | 1983-03-17 | 日本電信電話株式会社 | Semiconductor integrated circuit device and its manufacturing method |
JPS5643749A (en) * | 1979-09-18 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS5749193U (en) * | 1980-09-04 | 1982-03-19 | ||
JPS5898953A (en) * | 1981-12-08 | 1983-06-13 | Matsushita Electronics Corp | Semiconductor device |
JPH0130303B2 (en) * | 1981-12-08 | 1989-06-19 | Matsushita Electronics Corp | |
JPH02138447U (en) * | 1989-02-10 | 1990-11-19 |
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