JPS55165670A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165670A
JPS55165670A JP7309479A JP7309479A JPS55165670A JP S55165670 A JPS55165670 A JP S55165670A JP 7309479 A JP7309479 A JP 7309479A JP 7309479 A JP7309479 A JP 7309479A JP S55165670 A JPS55165670 A JP S55165670A
Authority
JP
Japan
Prior art keywords
regions
type
apertures
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7309479A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7309479A priority Critical patent/JPS55165670A/en
Publication of JPS55165670A publication Critical patent/JPS55165670A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To ease the preparation of a semiconductor device and to improve the integration of the device by a method wherein an epitaxial layer grown on the semiconductor substrate is divided into plural regions, bipolar transistors are formed on the respective regions and coated with insulating film, apertures are provided and resistances are attached to the apertures. CONSTITUTION:The n-type layer is epitaxially grown on the p<->-type semiconductor substrate 1 through the n<+>-type embedded layer 2, the n<+>-type regions 41-43, which reach the layer 2, are formed by the diffusion method to divide the epitaxial layer into the regions 31-33, and the respective regions are used for forming the bipolar transistors theta1-theta3. Next the p-type base regions 51-53 are formed in the respective separated regions 31-33 by the diffusion method, the n<+>-type collector regions 81-83 are provided in said regions, and the p<->-type region 6 is formed under the region 82 to improve the current mu factor. After this, the whole surface of the substrate is coated with the insulating film 10, the apertures 91-97 are made, the wirings 111-114 are provided, the insulating film 13 is applied to substrate again, the apertures 141-144 are provided and the resistors 151-153 of polycrystal Si or the like that is also used for the wiring are attached to the apertures.
JP7309479A 1979-06-12 1979-06-12 Semiconductor device Pending JPS55165670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7309479A JPS55165670A (en) 1979-06-12 1979-06-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7309479A JPS55165670A (en) 1979-06-12 1979-06-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55165670A true JPS55165670A (en) 1980-12-24

Family

ID=13508397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7309479A Pending JPS55165670A (en) 1979-06-12 1979-06-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165670A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115257U (en) * 1981-01-07 1982-07-16
JPS57170563A (en) * 1981-04-14 1982-10-20 Nec Corp Semiconductor integrated circuit device
JPS58105562A (en) * 1981-12-17 1983-06-23 Matsushita Electric Ind Co Ltd Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128278A (en) * 1975-04-30 1976-11-09 Sony Corp Integrated circuit with resistance element
JPS5593251A (en) * 1978-12-30 1980-07-15 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128278A (en) * 1975-04-30 1976-11-09 Sony Corp Integrated circuit with resistance element
JPS5593251A (en) * 1978-12-30 1980-07-15 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115257U (en) * 1981-01-07 1982-07-16
JPH0241867Y2 (en) * 1981-01-07 1990-11-08
JPS57170563A (en) * 1981-04-14 1982-10-20 Nec Corp Semiconductor integrated circuit device
JPS58105562A (en) * 1981-12-17 1983-06-23 Matsushita Electric Ind Co Ltd Semiconductor device

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