JPS5613758A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5613758A
JPS5613758A JP9016279A JP9016279A JPS5613758A JP S5613758 A JPS5613758 A JP S5613758A JP 9016279 A JP9016279 A JP 9016279A JP 9016279 A JP9016279 A JP 9016279A JP S5613758 A JPS5613758 A JP S5613758A
Authority
JP
Japan
Prior art keywords
resistor
region
layer
type regions
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9016279A
Other languages
Japanese (ja)
Other versions
JPH02861B2 (en
Inventor
Tsutomu Fujita
Toyoki Takemoto
Tadanaka Yoneda
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9016279A priority Critical patent/JPS5613758A/en
Priority to DE19803026779 priority patent/DE3026779A1/en
Priority to GB8023089A priority patent/GB2056768B/en
Publication of JPS5613758A publication Critical patent/JPS5613758A/en
Publication of JPH02861B2 publication Critical patent/JPH02861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To permit larger-scale integration in forming a bipolar transistor and an I<2>L in the same substrate by preparing all except for the I<2>L active base region and the resistor contact region in the separate processes. CONSTITUTION:In an N-type epitaxial layer 5', N<+>-type buried regions 4' each used as a portion of the collector of a bipolar transistor, a portion of the emitter of an I<2>L, and a resistor R are provided being separated by P<+> type regions 6'. In the transistor region, N<+>-type regions 7' serving both as the collector of the transistor and a portion of the emitter of the I<2>L are provided so as to reach the resions 4' from the surface of the layer 5'. Provided in the surface layer of the layer 5' are P<+>- type regions 1' each serving as the base of the bipolar transistor, the inert base of the I<2>L, and the contact in Al wiring of the resistor. In the I<2>L region, all P<->-type regions 3' except for the active base of the I<2>L and the contact region of the resistor are provided deeply in order to permit the preparation of a resistor having a narrow pattern width and a large sheet resistivity.
JP9016279A 1979-07-16 1979-07-16 Semiconductor integrated circuit Granted JPS5613758A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9016279A JPS5613758A (en) 1979-07-16 1979-07-16 Semiconductor integrated circuit
DE19803026779 DE3026779A1 (en) 1979-07-16 1980-07-15 INTEGRATED SEMICONDUCTOR CIRCUIT
GB8023089A GB2056768B (en) 1979-07-16 1980-07-15 Semiconductor integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9016279A JPS5613758A (en) 1979-07-16 1979-07-16 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5613758A true JPS5613758A (en) 1981-02-10
JPH02861B2 JPH02861B2 (en) 1990-01-09

Family

ID=13990787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9016279A Granted JPS5613758A (en) 1979-07-16 1979-07-16 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5613758A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025184A (en) * 1973-01-24 1975-03-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025184A (en) * 1973-01-24 1975-03-17

Also Published As

Publication number Publication date
JPH02861B2 (en) 1990-01-09

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