GB2056768B - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB2056768B
GB2056768B GB8023089A GB8023089A GB2056768B GB 2056768 B GB2056768 B GB 2056768B GB 8023089 A GB8023089 A GB 8023089A GB 8023089 A GB8023089 A GB 8023089A GB 2056768 B GB2056768 B GB 2056768B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
semiconductor integrated
semiconductor
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8023089A
Other versions
GB2056768A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9016279A external-priority patent/JPS5613758A/en
Priority claimed from JP16507979A external-priority patent/JPS5687357A/en
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB2056768A publication Critical patent/GB2056768A/en
Application granted granted Critical
Publication of GB2056768B publication Critical patent/GB2056768B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
GB8023089A 1979-07-16 1980-07-15 Semiconductor integrated circuits Expired GB2056768B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9016279A JPS5613758A (en) 1979-07-16 1979-07-16 Semiconductor integrated circuit
JP16507979A JPS5687357A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
GB2056768A GB2056768A (en) 1981-03-18
GB2056768B true GB2056768B (en) 1983-07-27

Family

ID=26431668

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8023089A Expired GB2056768B (en) 1979-07-16 1980-07-15 Semiconductor integrated circuits

Country Status (2)

Country Link
DE (1) DE3026779A1 (en)
GB (1) GB2056768B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054303B1 (en) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same
DE19844531B4 (en) * 1998-09-29 2017-12-14 Prema Semiconductor Gmbh Process for the production of transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device
US4100431A (en) * 1976-10-07 1978-07-11 Motorola, Inc. Integrated injection logic to linear high impedance current interface
DE2835330C3 (en) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Semiconductor integrated bipolar circuit and process for its manufacture
DE3020609C2 (en) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Method for manufacturing an integrated circuit having at least one I → 2 → L element

Also Published As

Publication number Publication date
DE3026779A1 (en) 1981-02-12
DE3026779C2 (en) 1990-11-08
GB2056768A (en) 1981-03-18

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19960628

PE20 Patent expired after termination of 20 years

Effective date: 20000714